Interwell carrier transport in InGaN/(In)GaN multiple quantum wells

Marcinkevičius, Saulius; Yapparov, Rinat; Kuritzky, Leah Y.; Wu, Yuh-Renn; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

doi:10.1063/1.5092585

Title: Interwell carrier transport in InGaN/(In)GaN multiple quantum wells

Abstract

Uniform carrier distribution between quantum wells (QWs) of multiple QW light emitting diodes (LEDs) and laser diodes is important for the efficiency of device operation. In lasers, the uniform distribution ensures that all the QWs contribute to lasing; in LEDs, it enables high power operation with minimal Auger losses and a maximal efficiency. The carrier distribution between the QWs takes place via interwell (IW) transport. In polar GaN-based structures, the transport might be hindered by the strong carrier confinement and the internal electric fields. In this work, we study the IW transport in InGaN/(In)GaN multiple QW structures typical for ultraviolet-emitting devices with different well and barrier parameters. Experiments have been performed by means of time-resolved photoluminescence. We find that the IW transport rate is limited by the hole thermionic emission, which for InGaN/GaN QWs produces long transport times, ~1 ns per well, and a nonuniform IW carrier distribution. However, adding 5% In to the barriers completely changes the situation with the transport time decreasing by a factor of four and the hole thermionic emission energy from 200 meV to 70 meV. Finally, this study shows that using InGaN barriers is a promising pathway toward efficient high power InGaN LEDs.

Authors:

^[1];

^[1]; Kuritzky, Leah Y. ^[2]; Wu, Yuh-Renn ^[3]; Nakamura, Shuji ^[2];

^[2]; Speck, James S. ^[2]

KTH Royal Inst. of Technology, Kista (Sweden)
Univ. of California, Santa Barbara, CA (United States)
National Taiwan Univ., Taipei (Taiwan)

Publication Date:: Tue Apr 16 00:00:00 EDT 2019

Research Org.:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); Swedish Energy Agency

OSTI Identifier:: 1614094

Alternate Identifier(s):: OSTI ID: 1507224

Grant/Contract Number:: EE0008204; 45390-1

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 114; Journal Issue: 15; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Physics; Semiconductors; Thermionic emission; Time-resolved photoluminescence; Quantum wells; Lasers; Transport properties; Photoexcitations; Activation energies; Light emitting diodes; Nitrides

Citation Formats


                    Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, DenBaars, Steven P., and Speck, James S. Interwell carrier transport in InGaN/(In)GaN multiple quantum wells.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5092585.

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                    Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, DenBaars, Steven P., & Speck, James S. Interwell carrier transport in InGaN/(In)GaN multiple quantum wells.  United States.  https://doi.org/10.1063/1.5092585

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                    Marcinkevičius, Saulius, Yapparov, Rinat, Kuritzky, Leah Y., Wu, Yuh-Renn, Nakamura, Shuji, DenBaars, Steven P., and Speck, James S. Tue .  
"Interwell carrier transport in InGaN/(In)GaN multiple quantum wells".  United States.  https://doi.org/10.1063/1.5092585.  https://www.osti.gov/servlets/purl/1614094.

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@article{osti_1614094,

  title        = {Interwell carrier transport in InGaN/(In)GaN multiple quantum wells},

  author       = {Marcinkevičius, Saulius and Yapparov, Rinat and Kuritzky, Leah Y. and Wu, Yuh-Renn and Nakamura, Shuji and DenBaars, Steven P. and Speck, James S.},

  abstractNote = {Uniform carrier distribution between quantum wells (QWs) of multiple QW light emitting diodes (LEDs) and laser diodes is important for the efficiency of device operation. In lasers, the uniform distribution ensures that all the QWs contribute to lasing; in LEDs, it enables high power operation with minimal Auger losses and a maximal efficiency. The carrier distribution between the QWs takes place via interwell (IW) transport. In polar GaN-based structures, the transport might be hindered by the strong carrier confinement and the internal electric fields. In this work, we study the IW transport in InGaN/(In)GaN multiple QW structures typical for ultraviolet-emitting devices with different well and barrier parameters. Experiments have been performed by means of time-resolved photoluminescence. We find that the IW transport rate is limited by the hole thermionic emission, which for InGaN/GaN QWs produces long transport times, ~1 ns per well, and a nonuniform IW carrier distribution. However, adding 5% In to the barriers completely changes the situation with the transport time decreasing by a factor of four and the hole thermionic emission energy from 200 meV to 70 meV. Finally, this study shows that using InGaN barriers is a promising pathway toward efficient high power InGaN LEDs.},

  doi          = {10.1063/1.5092585},

  journal      = {Applied Physics Letters},

  number       = 15,

  volume       = 114,

  place        = {United States},

  year         = {Tue Apr 16 00:00:00 EDT 2019},

  month        = {Tue Apr 16 00:00:00 EDT 2019}

}

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Works referencing / citing this record:

Spectral-temporal dynamics of (Al,In)GaN laser diodes
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Title: Interwell carrier transport in InGaN/(In)GaN multiple quantum wells

Abstract

Citation Formats

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH 3 molecular beam epitaxy journal, May 2015

Breakdown of thermionic emission theory for quantum wells journal, July 1994

Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells journal, September 2013

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap journal, October 2016

Photoluminescence of two-dimensional excitons in an electric field: Lifetime enhancement and field ionization in GaAs quantum wells journal, September 1988

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes journal, April 2017

Thermionic emission and Gaussian transport of holes in a GaAs/ Al x Ga 1 − x As multiple-quantum-well structure journal, September 1988

Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells: Recombination in non- and semipolar GaInN/GaN quantum wells journal, August 2015

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior journal, September 2014

Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes journal, April 2012

Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopy journal, June 1987

Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes journal, September 2011

Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers journal, January 2012

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency journal, August 2010

The investigation on carrier distribution in InGaN/GaN multiple quantum well layers journal, May 2011

Carrier lifetimes in AlGaN quantum wells: electric field and excitonic effects journal, July 2008

Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths journal, August 2003

Simultaneous measurements of electron and hole sweep-out from quantum wells and modeling of photoinduced field screening dynamics journal, January 1992

Band bowing and band alignment in InGaN alloys journal, January 2010

Photoexcited carrier trapping and recombination at Fe centers in GaN journal, June 2016

Carrier dynamics in bulk GaN journal, January 2012

Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy journal, December 2016

Optically detected carrier transport in III/V semiconductor QW structures: experiments, model calculations and applications in fast 1.55 μm laser devices journal, January 1998

Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes journal, October 2009

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes journal, February 2008

Dynamics of carrier tunneling and recombination in asymmetric coupled InGaN multiple quantum wells journal, January 2017

Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells journal, July 2000

Interwell carrier transport in InGaAsP multiple quantum well laser structures journal, December 1996

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes text, January 2017

Spectral-temporal dynamics of (Al,In)GaN laser diodes journal, January 2020

III-Nitride Multi-Quantum-Well Light Emitting Structures with Selective Carrier Injection journal, September 2019

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH ₃ molecular beam epitaxy
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Breakdown of thermionic emission theory for quantum wells
journal, July 1994

Photoexcited carrier recombination in wide m -plane InGaN/GaN quantum wells
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Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
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Photoluminescence of two-dimensional excitons in an electric field: Lifetime enhancement and field ionization in GaAs quantum wells
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Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
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Thermionic emission and Gaussian transport of holes in a GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As multiple-quantum-well structure
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The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
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Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopy
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