DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: ZnO 1−x Te x highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure

Authors:
 [1]; ORCiD logo [2];  [1];  [3];  [4]; ORCiD logo [5];  [6];  [6];  [7];  [8]
  1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Department of Mechanical Engineering, University of California, Berkeley, California 94720, USA
  2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Department of Physics, City University of Hong Kong, Kowloon 999077, Hong Kong
  3. Walter Schottky Institut and Physik Department, Technische Universität München, Munich 80333, Germany
  4. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  5. Department of Applied Physics, Aalto University, P.O. Box 14100, Aalto, FIN-00076 Espoo, Finland
  6. Department of Mechanical Engineering, University of California, Berkeley, California 94720, USA
  7. Department of Physics, City University of Hong Kong, Kowloon 999077, Hong Kong, Department of Physics, College of Science, Shantou University, Shantou, Guangdong 515063, China
  8. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1507222
Grant/Contract Number:  
AC02- 05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 125 Journal Issue: 15; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Ting, M., Yu, K. M., Jaquez, M., Sharp, I. D., Ye, Yifan, Segercrantz, N., Greif, R., Mao, S. S., Liu, Chao Ping, and Walukiewicz, W. ZnO 1−x Te x highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure. United States: N. p., 2019. Web. doi:10.1063/1.5088852.
Ting, M., Yu, K. M., Jaquez, M., Sharp, I. D., Ye, Yifan, Segercrantz, N., Greif, R., Mao, S. S., Liu, Chao Ping, & Walukiewicz, W. ZnO 1−x Te x highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure. United States. https://doi.org/10.1063/1.5088852
Ting, M., Yu, K. M., Jaquez, M., Sharp, I. D., Ye, Yifan, Segercrantz, N., Greif, R., Mao, S. S., Liu, Chao Ping, and Walukiewicz, W. Sun . "ZnO 1−x Te x highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure". United States. https://doi.org/10.1063/1.5088852.
@article{osti_1507222,
title = {ZnO 1−x Te x highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure},
author = {Ting, M. and Yu, K. M. and Jaquez, M. and Sharp, I. D. and Ye, Yifan and Segercrantz, N. and Greif, R. and Mao, S. S. and Liu, Chao Ping and Walukiewicz, W.},
abstractNote = {},
doi = {10.1063/1.5088852},
journal = {Journal of Applied Physics},
number = 15,
volume = 125,
place = {United States},
year = {Sun Apr 21 00:00:00 EDT 2019},
month = {Sun Apr 21 00:00:00 EDT 2019}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.5088852

Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Transparent Conducting Oxides for Photovoltaics
journal, March 2007

  • Fortunato, Elvira; Ginley, David; Hosono, Hideo
  • MRS Bulletin, Vol. 32, Issue 03, p. 242-247
  • DOI: 10.1557/mrs2007.29

Modeling of InGaN/Si tandem solar cells
journal, July 2008

  • Hsu, L.; Walukiewicz, W.
  • Journal of Applied Physics, Vol. 104, Issue 2
  • DOI: 10.1063/1.2952031

Fermi level stabilization and band edge energies in Cd x Zn 1−x O alloys
journal, June 2014

  • Detert, Douglas M.; Tom, Kyle B.; Battaglia, Corsin
  • Journal of Applied Physics, Vol. 115, Issue 23
  • DOI: 10.1063/1.4884683

Epitaxial growth and optoelectronic properties of nitrogen-doped ZnO films on Al2O3 substrate
journal, April 2002


Band Anticrossing in GaInNAs Alloys
journal, February 1999


Valence band hybridization in N -rich GaN 1 x As x alloys
journal, September 2004


Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe 1−x O x alloys
journal, January 2012

  • Tanaka, Tooru; Kusaba, Shuhei; Mochinaga, Tomohiro
  • Applied Physics Letters, Vol. 100, Issue 1
  • DOI: 10.1063/1.3674310

Why nitrogen cannot lead to p-type conductivity in ZnO
journal, December 2009

  • Lyons, J. L.; Janotti, A.; Van de Walle, C. G.
  • Applied Physics Letters, Vol. 95, Issue 25
  • DOI: 10.1063/1.3274043

Growth and characterization of ZnO1−xSx highly mismatched alloys over the entire composition
journal, December 2015

  • Jaquez, M.; Yu, K. M.; Ting, M.
  • Journal of Applied Physics, Vol. 118, Issue 21
  • DOI: 10.1063/1.4936551

Fermi level stabilization energy in cadmium oxide
journal, June 2010

  • Speaks, D. T.; Mayer, M. A.; Yu, K. M.
  • Journal of Applied Physics, Vol. 107, Issue 11
  • DOI: 10.1063/1.3428444

Tandem Solar Cells Based on High-Efficiency c-Si Bottom Cells: Top Cell Requirements for >30% Efficiency
journal, January 2014


Structural properties and bandgap bowing of ZnO1−xSx thin films deposited by reactive sputtering
journal, November 2004

  • Meyer, B. K.; Polity, A.; Farangis, B.
  • Applied Physics Letters, Vol. 85, Issue 21
  • DOI: 10.1063/1.1825053

Fundamentals of zinc oxide as a semiconductor
journal, October 2009


Transparent Conductive Zinc Oxide
book, January 2008


Electronic band structure of highly mismatched GaN 1−x Sb x alloys in a broad composition range
journal, October 2015

  • Segercrantz, N.; Yu, K. M.; Ting, M.
  • Applied Physics Letters, Vol. 107, Issue 14
  • DOI: 10.1063/1.4932592

Recent progress of the native defects and p-type doping of zinc oxide
journal, April 2017


Effect of oxygen on the electronic band structure in ZnOxSe1−x alloys
journal, July 2003

  • Shan, W.; Walukiewicz, W.; Ager, J. W.
  • Applied Physics Letters, Vol. 83, Issue 2
  • DOI: 10.1063/1.1592885

Valence band anticrossing in GaBixAs1−x
journal, July 2007

  • Alberi, K.; Dubon, O. D.; Walukiewicz, W.
  • Applied Physics Letters, Vol. 91, Issue 5
  • DOI: 10.1063/1.2768312

Highly mismatched GaN 1− x Sb x alloys: synthesis, structure and electronic properties
journal, June 2016


Diluted II-VI Oxide Semiconductors with Multiple Band Gaps
journal, December 2003


Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO
journal, January 2001


Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency
journal, July 2016


Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides
journal, July 2015


Interaction of Localized Electronic States with the Conduction Band: Band Anticrossing in II-VI Semiconductor Ternaries
journal, August 2000


Intrinsic limitations to the doping of wide-gap semiconductors
journal, January 2001


Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy
journal, October 2008


Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions
journal, August 2017


Transparent conductors as solar energy materials: A panoramic review
journal, October 2007


Band structure engineering of ZnO1−xSex alloys
journal, July 2010

  • Mayer, Marie A.; Speaks, Derrick T.; Yu, Kin Man
  • Applied Physics Letters, Vol. 97, Issue 2
  • DOI: 10.1063/1.3464323

Electronic band structure of ZnO-rich highly mismatched ZnO1−xTex alloys
journal, March 2015

  • Ting, M.; dos Reis, R.; Jaquez, M.
  • Applied Physics Letters, Vol. 106, Issue 9
  • DOI: 10.1063/1.4913840

Undoped p -type GaN 1– x Sb x alloys: Effects of annealing
journal, December 2016

  • Segercrantz, N.; Baumgartner, Y.; Ting, M.
  • Applied Physics Letters, Vol. 109, Issue 25
  • DOI: 10.1063/1.4972559

Solar cell efficiency tables (Version 45): Solar cell efficiency tables
journal, December 2014

  • Green, Martin A.; Emery, Keith; Hishikawa, Yoshihiro
  • Progress in Photovoltaics: Research and Applications, Vol. 23, Issue 1
  • DOI: 10.1002/pip.2573

Nitrogen is a deep acceptor in ZnO
journal, April 2011

  • Tarun, M. C.; Iqbal, M. Zafar; McCluskey, M. D.
  • AIP Advances, Vol. 1, Issue 2
  • DOI: 10.1063/1.3582819

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction
journal, March 2015

  • Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.
  • Applied Physics Letters, Vol. 106, Issue 12
  • DOI: 10.1063/1.4914179

Efficiency limits for single-junction and tandem solar cells
journal, November 2006


Band anticrossing in highly mismatched III V semiconductor alloys
journal, July 2002


Semi-transparent perovskite solar cells for tandems with silicon and CIGS
journal, January 2015

  • Bailie, Colin D.; Christoforo, M. Greyson; Mailoa, Jonathan P.
  • Energy & Environmental Science, Vol. 8, Issue 3
  • DOI: 10.1039/C4EE03322A

Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range
journal, November 2009

  • Yu, K. M.; Novikov, S. V.; Broesler, R.
  • Journal of Applied Physics, Vol. 106, Issue 10
  • DOI: 10.1063/1.3259434

A comprehensive review of ZnO materials and devices
journal, August 2005

  • Özgür, Ü.; Alivov, Ya. I.; Liu, C.
  • Journal of Applied Physics, Vol. 98, Issue 4
  • DOI: 10.1063/1.1992666

Adventitious carbon?the panacea for energy referencing?
journal, April 1982


p-Type ZnO materials: Theory, growth, properties and devices
journal, July 2013


Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium
journal, May 2005

  • Porter, H. L.; Cai, A. L.; Muth, J. F.
  • Applied Physics Letters, Vol. 86, Issue 21
  • DOI: 10.1063/1.1923194