Large quantum-spin-Hall gap in single-layer 1T' WSe2

Chen, P.; Pai, Woei Wu; Chan, Y. -H.; Sun, W. -L.; Xu, C. -Z.; Lin, D. -S.; Chou, M. Y.; Fedorov, A. -V.; Chiang, T. -C.

doi:10.1038/s41467-018-04395-2

Title: Large quantum-spin-Hall gap in single-layer 1T' WSe₂

Abstract

Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum-spin-Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe₂ single layer with the 1T' structure that does not exist in the bulk form of WSe₂. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observe a gap of 129 meV in the 1T' layer and an in-gap edge state located near the layer boundary. The system's 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator-semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.

Authors:

^[1]; Pai, Woei Wu ^[2]; Chan, Y. -H. ^[3]; Sun, W. -L. ^[4];

^[5]; Lin, D. -S. ^[4]; Chou, M. Y. ^[6]; Fedorov, A. -V. ^[7]; Chiang, T. -C. ^[8]

University of Illinois at Urbana-Champaign, Urbana, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
National Taiwan Univ., Taipei (Taiwan)
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei (Taiwan)
National Tsing Hua University, Hsinchu (Taiwan)
University of Illinois at Urbana-Champaign, Urbana, IL (United States)
National Taiwan Univ., Taipei (Taiwan); Georgia Inst. of Technology, Atlanta, GA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
University of Illinois at Urbana-Champaign, Urbana, IL (United States); National Taiwan Univ., Taipei (Taiwan)

Publication Date:: 2018-05-21

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

OSTI Identifier:: 1506388

Grant/Contract Number:: AC02-05CH11231; FG02-07ER46383

Resource Type:: Accepted Manuscript

Journal Name:: Nature Communications

Additional Journal Information:: Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Chen, P., Pai, Woei Wu, Chan, Y. -H., Sun, W. -L., Xu, C. -Z., Lin, D. -S., Chou, M. Y., Fedorov, A. -V., and Chiang, T. -C.. Large quantum-spin-Hall gap in single-layer 1T' WSe2.  United States: N. p., 2018. 
Web.  doi:10.1038/s41467-018-04395-2.

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                    Chen, P., Pai, Woei Wu, Chan, Y. -H., Sun, W. -L., Xu, C. -Z., Lin, D. -S., Chou, M. Y., Fedorov, A. -V., & Chiang, T. -C.. Large quantum-spin-Hall gap in single-layer 1T' WSe2.  United States.  https://doi.org/10.1038/s41467-018-04395-2

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                    Chen, P., Pai, Woei Wu, Chan, Y. -H., Sun, W. -L., Xu, C. -Z., Lin, D. -S., Chou, M. Y., Fedorov, A. -V., and Chiang, T. -C.. Mon .  
"Large quantum-spin-Hall gap in single-layer 1T' WSe2".  United States.  https://doi.org/10.1038/s41467-018-04395-2.  https://www.osti.gov/servlets/purl/1506388.

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@article{osti_1506388,

  title        = {Large quantum-spin-Hall gap in single-layer 1T' WSe2},

  author       = {Chen, P. and Pai, Woei Wu and Chan, Y. -H. and Sun, W. -L. and Xu, C. -Z. and Lin, D. -S. and Chou, M. Y. and Fedorov, A. -V. and Chiang, T. -C.},

  abstractNote = {Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum-spin-Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe2 single layer with the 1T' structure that does not exist in the bulk form of WSe2. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observe a gap of 129 meV in the 1T' layer and an in-gap edge state located near the layer boundary. The system's 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator-semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.},

  doi          = {10.1038/s41467-018-04395-2},

  journal      = {Nature Communications},

  number       = 1,

  volume       = 9,

  place        = {United States},

  year         = {2018},

  month        = {5}

}

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Electronic structure of monolayer 1T'-MoTe₂ grown by molecular beam epitaxy

Journal Article Tang, Shujie ; Zhang, Chaofan ; Jia, Chunjing ; ... - APL Materials

Monolayer transition metal dichalcogenides (TMDCs) in the 1T' structural phase have drawn a great deal of attention due to the prediction of quantum spin Hall insulator states. The band inversion and the concomitant changes in the band topology induced by the structural distortion from 1T to 1T' phases are well established. However, the bandgap opening due to the strong spin-orbit coupling (SOC) is only verified for 1T'-WTe₂ recently and still debated for other TMDCs. Here we report a successful growth of high-quality monolayer 1T'-MoTe₂ on a bilayer graphene substrate through molecular beam epitaxy. Using in situ angle-resolved photoemission spectroscopy (ARPES),more »« less
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https://doi.org/10.1063/1.5004700

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Generalized Gradient Approximation Made Simple journal, October 1996

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Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal, July 1996

Visualizing Type-II Weyl Points in Tungsten Ditelluride by Quasiparticle Interference journal, September 2017

Z2 Topological Order and the Quantum Spin Hall Effect journal, September 2005

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Ab initio molecular dynamics for open-shell transition metals journal, November 1993

Quantum Spin Hall Effect in Graphene journal, November 2005

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Spin- and valley- coupled electronic states in monolayer WSe2 on bilayer graphene text, January 2015

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Quantum Spin Hall Effect text, January 2005

Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling text, January 2006

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells text, January 2006

Room Temperature Quantum Spin Hall Insulators with a Buckled Square Lattice journal, April 2015

Visualizing Type-II Weyl Points in Tungsten Ditelluride by Quasiparticle Interference journal, September 2017

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures journal, September 2011

Charge density wave transition in single-layer titanium diselenide journal, November 2015

Epitaxial growth of two-dimensional stanene journal, August 2015

Topological edge states in a high-temperature superconductor FeSe/SrTiO3(001) film journal, July 2016

Negative electronic compressibility and tunable spin splitting in WSe2 journal, September 2015

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface journal, September 2014

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells journal, December 2006

Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material journal, June 2017

Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor text, January 2014

Edge conduction in monolayer WTe2 text, January 2016

Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2 text, January 2017

Quantum Spin Hall Effect text, January 2005

Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling text, January 2006

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Title: Large quantum-spin-Hall gap in single-layer 1T' WSe₂

Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
journal, June 2017

Generalized Gradient Approximation Made Simple
journal, October 1996

Phase engineering of transition metal dichalcogenides
journal, January 2015

Topological insulators and superconductors
journal, October 2011

Topological edge states in a high-temperature superconductor FeSe/SrTiO3(001) film
journal, July 2016

Two-dimensional transition metal dichalcogenides with a hexagonal lattice: Room-temperature quantum spin Hall insulators
journal, January 2016

Charge density wave transition in single-layer titanium diselenide
journal, November 2015

Projector augmented-wave method
journal, December 1994

Negative electronic compressibility and tunable spin splitting in WSe2
journal, September 2015

Understanding topological phase transition in monolayer transition metal dichalcogenides
journal, March 2016

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Visualizing Type-II Weyl Points in Tungsten Ditelluride by Quasiparticle Interference
journal, September 2017

$Z_{2}$ Topological Order and the Quantum Spin Hall Effect
journal, September 2005

Quantum Spin Hall Insulator State in HgTe Quantum Wells
journal, November 2007

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe ₂ Thin Films
journal, March 2016

Ab initio molecular dynamics for open-shell transition metals
journal, November 1993

Quantum Spin Hall Effect in Graphene
journal, November 2005

Colloquium: Topological insulators
journal, November 2010

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
journal, December 2006

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates
journal, January 2013

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface
journal, September 2014

Spin- and valley-coupled electronic states in monolayer WSe ₂ on bilayer graphene
journal, August 2015

Quantum Spin Hall Effect
journal, March 2006

Large-Gap Quantum Spin Hall Insulators in Tin Films
journal, September 2013

Edge conduction in monolayer WTe2
journal, April 2017

Quantum spin Hall effect in two-dimensional transition metal dichalcogenides
journal, November 2014

Suppression and emergence of charge-density waves at the surfaces of layered 1 T -TiSe ₂ and 1 T -TaS ₂ by in situ Rb deposition
journal, December 2010

Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
journal, December 2006

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures
journal, September 2011

Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor
journal, October 2014

Epitaxial growth of two-dimensional stanene
journal, August 2015

Room Temperature Quantum Spin Hall Insulators with a Buckled Square Lattice
journal, April 2015

Quantum spin Hall state in monolayer 1T'-WTe2
journal, June 2017

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets
journal, May 2021

High-resolution X-ray luminescence extension imaging
journal, February 2021

Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect
journal, February 2020

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures
text, January 2011

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface
text, January 2014

Epitaxial Growth of Two-Dimensional Stanene
text, January 2015

Spin- and valley- coupled electronic states in monolayer WSe2 on bilayer graphene
text, January 2015

Two-Dimensional Transition Metal Dichalcogenides with a Hexagonal Lattice: Room Temperature Quantum Spin Hall Insulators
text, January 2015

Edge conduction in monolayer WTe2
text, January 2016

Quantum Spin Hall Effect
text, January 2005

Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
text, January 2006

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
text, January 2006

Room Temperature Quantum Spin Hall Insulators with a Buckled Square Lattice
journal, April 2015

Visualizing Type-II Weyl Points in Tungsten Ditelluride by Quasiparticle Interference
journal, September 2017

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures
journal, September 2011

Charge density wave transition in single-layer titanium diselenide
journal, November 2015

Epitaxial growth of two-dimensional stanene
journal, August 2015

Topological edge states in a high-temperature superconductor FeSe/SrTiO3(001) film
journal, July 2016

Negative electronic compressibility and tunable spin splitting in WSe2
journal, September 2015

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface
journal, September 2014

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
journal, December 2006

Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
journal, June 2017

Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor
text, January 2014

Edge conduction in monolayer WTe2
text, January 2016

Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2
text, January 2017

Quantum Spin Hall Effect
text, January 2005

Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
text, January 2006

Discovery of Superconductivity in 2M WS 2 with Possible Topological Surface States
journal, June 2019

Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
journal, September 2018

Direct solution-phase synthesis of 1T’ WSe2 nanosheets
journal, February 2019

Growth and Thermo-driven Crystalline Phase Transition of Metastable Monolayer 1T′-WSe2 Thin Film
journal, February 2019

Observation of superconductivity in pressurized 2M WSe ₂ crystals
journal, January 2019

Tunable electronic properties in stanene and two dimensional silicon-carbide heterobilayer: A first principles investigation
journal, February 2019

Evidence for a narrow band gap phase in 1T′ WS ₂ nanosheet
journal, July 2019

Memristive phase switching in two-dimensional 1T′-VSe ₂ crystals
journal, January 2020

Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
journal, December 2019

Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin ${PtTe}_{2}$ Films
journal, January 2020

Influence of lattice termination on the edge states of the quantum spin Hall insulator monolayer $1 T^{'} − {WTe}_{2}$
journal, May 2019

Detection of second-order topological superconductors by Josephson junctions
journal, January 2020

Realization of vertical metal semiconductor heterostructures via solution phase epitaxy.
text, January 2018

Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
text, January 2019

Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
journal, September 2018