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Title: Direct Detection of Akhiezer Damping in a Silicon MEMS Resonator

Silicon Microelectromechanical Systems (MEMS) resonators have broad commercial applications for timing and inertial sensing. However, the performance of MEMS resonators is constrained by dissipation mechanisms, some of which are easily detected and well-understood, but some of which have never been directly observed. In this work, we present measurements of the quality factor, Q, for a family of single crystal silicon Lamé-mode resonators as a function of temperature, from 80–300 K. By comparing these Q measurements on resonators with variations in design, dimensions, and anchors, we have been able to show that gas damping, thermoelastic dissipation, and anchor damping are not significant dissipation mechanisms for these resonators. The measured f ·Q product for these devices approaches 2 × 10 13, which is consistent with the expected range for Akhiezer damping, and the dependence of Q on temperature and geometry is consistent with expectations for Akhiezer damping. These results thus provide the first clear, direct detection of Akhiezer dissipation in a MEMS resonator, which is widely considered to be the ultimate limit to Q in silicon MEMS devices.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Stanford Univ., Stanford, CA (United States)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Grant/Contract Number:
N66001-16-1-4023; AC02-76SF00515
Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Research Org:
SLAC National Accelerator Lab. (SLAC), Menlo Park, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION
OSTI Identifier:
1506233

Rodriguez, Janna, Chandorkar, Saurabh A., Watson, Christopher A., Glaze, Grant M., Ahn, C. H., Ng, Eldwin J., Yang, Yushi, and Kenny, Thomas W.. Direct Detection of Akhiezer Damping in a Silicon MEMS Resonator. United States: N. p., Web. doi:10.1038/s41598-019-38847-6.
Rodriguez, Janna, Chandorkar, Saurabh A., Watson, Christopher A., Glaze, Grant M., Ahn, C. H., Ng, Eldwin J., Yang, Yushi, & Kenny, Thomas W.. Direct Detection of Akhiezer Damping in a Silicon MEMS Resonator. United States. doi:10.1038/s41598-019-38847-6.
Rodriguez, Janna, Chandorkar, Saurabh A., Watson, Christopher A., Glaze, Grant M., Ahn, C. H., Ng, Eldwin J., Yang, Yushi, and Kenny, Thomas W.. 2019. "Direct Detection of Akhiezer Damping in a Silicon MEMS Resonator". United States. doi:10.1038/s41598-019-38847-6. https://www.osti.gov/servlets/purl/1506233.
@article{osti_1506233,
title = {Direct Detection of Akhiezer Damping in a Silicon MEMS Resonator},
author = {Rodriguez, Janna and Chandorkar, Saurabh A. and Watson, Christopher A. and Glaze, Grant M. and Ahn, C. H. and Ng, Eldwin J. and Yang, Yushi and Kenny, Thomas W.},
abstractNote = {Silicon Microelectromechanical Systems (MEMS) resonators have broad commercial applications for timing and inertial sensing. However, the performance of MEMS resonators is constrained by dissipation mechanisms, some of which are easily detected and well-understood, but some of which have never been directly observed. In this work, we present measurements of the quality factor, Q, for a family of single crystal silicon Lamé-mode resonators as a function of temperature, from 80–300 K. By comparing these Q measurements on resonators with variations in design, dimensions, and anchors, we have been able to show that gas damping, thermoelastic dissipation, and anchor damping are not significant dissipation mechanisms for these resonators. The measured f ·Q product for these devices approaches 2 × 1013, which is consistent with the expected range for Akhiezer damping, and the dependence of Q on temperature and geometry is consistent with expectations for Akhiezer damping. These results thus provide the first clear, direct detection of Akhiezer dissipation in a MEMS resonator, which is widely considered to be the ultimate limit to Q in silicon MEMS devices.},
doi = {10.1038/s41598-019-38847-6},
journal = {Scientific Reports},
number = 1,
volume = 9,
place = {United States},
year = {2019},
month = {2}
}

Works referenced in this record:

MEMS technology for timing and frequency control
journal, January 2007
  • Nguyen, Clark
  • IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Vol. 54, Issue 2, p. 251-270
  • DOI: 10.1109/TUFFC.2007.240