Direct Detection of Akhiezer Damping in a Silicon MEMS Resonator
Abstract
Abstract Silicon Microelectromechanical Systems (MEMS) resonators have broad commercial applications for timing and inertial sensing. However, the performance of MEMS resonators is constrained by dissipation mechanisms, some of which are easily detected and well-understood, but some of which have never been directly observed. In this work, we present measurements of the quality factor, Q , for a family of single crystal silicon Lamé-mode resonators as a function of temperature, from 80–300 K . By comparing these Q measurements on resonators with variations in design, dimensions, and anchors, we have been able to show that gas damping, thermoelastic dissipation, and anchor damping are not significant dissipation mechanisms for these resonators. The measured f · Q product for these devices approaches 2 × 10 13 , which is consistent with the expected range for Akhiezer damping, and the dependence of Q on temperature and geometry is consistent with expectations for Akhiezer damping. These results thus provide the first clear, direct detection of Akhiezer dissipation in a MEMS resonator, which is widely considered to be the ultimate limit to Q in silicon MEMS devices.
- Authors:
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab. (SLAC), Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1619492
- Alternate Identifier(s):
- OSTI ID: 1506233
- Grant/Contract Number:
- AC02-76SF00515; N66001-16-1-4023
- Resource Type:
- Published Article
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Name: Scientific Reports Journal Volume: 9 Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION
Citation Formats
Rodriguez, Janna, Chandorkar, Saurabh A., Watson, Christopher A., Glaze, Grant M., Ahn, C. H., Ng, Eldwin J., Yang, Yushi, and Kenny, Thomas W. Direct Detection of Akhiezer Damping in a Silicon MEMS Resonator. United Kingdom: N. p., 2019.
Web. doi:10.1038/s41598-019-38847-6.
Rodriguez, Janna, Chandorkar, Saurabh A., Watson, Christopher A., Glaze, Grant M., Ahn, C. H., Ng, Eldwin J., Yang, Yushi, & Kenny, Thomas W. Direct Detection of Akhiezer Damping in a Silicon MEMS Resonator. United Kingdom. https://doi.org/10.1038/s41598-019-38847-6
Rodriguez, Janna, Chandorkar, Saurabh A., Watson, Christopher A., Glaze, Grant M., Ahn, C. H., Ng, Eldwin J., Yang, Yushi, and Kenny, Thomas W. Tue .
"Direct Detection of Akhiezer Damping in a Silicon MEMS Resonator". United Kingdom. https://doi.org/10.1038/s41598-019-38847-6.
@article{osti_1619492,
title = {Direct Detection of Akhiezer Damping in a Silicon MEMS Resonator},
author = {Rodriguez, Janna and Chandorkar, Saurabh A. and Watson, Christopher A. and Glaze, Grant M. and Ahn, C. H. and Ng, Eldwin J. and Yang, Yushi and Kenny, Thomas W.},
abstractNote = {Abstract Silicon Microelectromechanical Systems (MEMS) resonators have broad commercial applications for timing and inertial sensing. However, the performance of MEMS resonators is constrained by dissipation mechanisms, some of which are easily detected and well-understood, but some of which have never been directly observed. In this work, we present measurements of the quality factor, Q , for a family of single crystal silicon Lamé-mode resonators as a function of temperature, from 80–300 K . By comparing these Q measurements on resonators with variations in design, dimensions, and anchors, we have been able to show that gas damping, thermoelastic dissipation, and anchor damping are not significant dissipation mechanisms for these resonators. The measured f · Q product for these devices approaches 2 × 10 13 , which is consistent with the expected range for Akhiezer damping, and the dependence of Q on temperature and geometry is consistent with expectations for Akhiezer damping. These results thus provide the first clear, direct detection of Akhiezer dissipation in a MEMS resonator, which is widely considered to be the ultimate limit to Q in silicon MEMS devices.},
doi = {10.1038/s41598-019-38847-6},
journal = {Scientific Reports},
number = 1,
volume = 9,
place = {United Kingdom},
year = {Tue Feb 19 00:00:00 EST 2019},
month = {Tue Feb 19 00:00:00 EST 2019}
}
https://doi.org/10.1038/s41598-019-38847-6
Web of Science
Figures / Tables:
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