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Title: Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Abstract

A strong variation in the luminescence characteristics in Mg-doped GaN grown on mesa structures has been observed, with the sidewall luminescence being different from that of the flat regions. A comparison with the luminescence characteristics of Mg-doped GaN epilayers with different Mg concentrations indicates that the sidewall has a significantly lower Mg content. Here, this observed non-uniform Mg distribution is attributed to the dependence of Mg incorporation efficiency on the crystal orientation of the growth surface, which should impact the electrical performance of power devices.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [2];  [1]; ORCiD logo [1];  [2]; ORCiD logo [1]
  1. Arizona State Univ., Tempe, AZ (United States). Dept. of Physics
  2. Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer and Energy Engineering
Publication Date:
Research Org.:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Science Foundation (NSF)
OSTI Identifier:
1505574
Grant/Contract Number:  
AR0000868; ECCS-1542160
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Liu, Hanxiao, Fu, Houqiang, Fu, Kai, Alugubelli, Shanthan R., Su, Po-Yi, Zhao, Yuji, and Ponce, Fernando A. Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics. United States: N. p., 2019. Web. doi:10.1063/1.5088168.
Liu, Hanxiao, Fu, Houqiang, Fu, Kai, Alugubelli, Shanthan R., Su, Po-Yi, Zhao, Yuji, & Ponce, Fernando A. Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics. United States. doi:10.1063/1.5088168.
Liu, Hanxiao, Fu, Houqiang, Fu, Kai, Alugubelli, Shanthan R., Su, Po-Yi, Zhao, Yuji, and Ponce, Fernando A. Tue . "Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics". United States. doi:10.1063/1.5088168. https://www.osti.gov/servlets/purl/1505574.
@article{osti_1505574,
title = {Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics},
author = {Liu, Hanxiao and Fu, Houqiang and Fu, Kai and Alugubelli, Shanthan R. and Su, Po-Yi and Zhao, Yuji and Ponce, Fernando A.},
abstractNote = {A strong variation in the luminescence characteristics in Mg-doped GaN grown on mesa structures has been observed, with the sidewall luminescence being different from that of the flat regions. A comparison with the luminescence characteristics of Mg-doped GaN epilayers with different Mg concentrations indicates that the sidewall has a significantly lower Mg content. Here, this observed non-uniform Mg distribution is attributed to the dependence of Mg incorporation efficiency on the crystal orientation of the growth surface, which should impact the electrical performance of power devices.},
doi = {10.1063/1.5088168},
journal = {Applied Physics Letters},
number = 8,
volume = 114,
place = {United States},
year = {2019},
month = {2}
}

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