Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Liu, Hanxiao; Fu, Houqiang; Fu, Kai; Alugubelli, Shanthan R.; Su, Po-Yi; Zhao, Yuji; Ponce, Fernando A.

doi:10.1063/1.5088168

Title: Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Journal Article · 25 February 2019 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5088168 · OSTI ID:1505574

^[1];

^[2]; Fu, Kai ^[2]; Alugubelli, Shanthan R. ^[3];

^[3]; Zhao, Yuji ^[2];

^[3]

Arizona State Univ., Tempe, AZ (United States). Dept. of Physics; Arizona State University
Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer and Energy Engineering
Arizona State Univ., Tempe, AZ (United States). Dept. of Physics

A strong variation in the luminescence characteristics in Mg-doped GaN grown on mesa structures has been observed, with the sidewall luminescence being different from that of the flat regions. A comparison with the luminescence characteristics of Mg-doped GaN epilayers with different Mg concentrations indicates that the sidewall has a significantly lower Mg content. Here, this observed non-uniform Mg distribution is attributed to the dependence of Mg incorporation efficiency on the crystal orientation of the growth surface, which should impact the electrical performance of power devices.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000868

OSTI ID:: 1505574

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 114; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai Applied Physics Letters, Vol. 115, Issue 20 https://doi.org/10.1063/1.5127014	journal	November 2019
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Xiao, Ming; Du, Zhonghao; Xie, Jinqiao Applied Physics Letters, Vol. 116, Issue 5 https://doi.org/10.1063/1.5139906	journal	February 2020

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