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Title: Irreversible metal-insulator transition in thin film VO 2 induced by soft X-ray irradiation

Abstract

In this study, we show the ability of soft x-ray irradiation to induce room temperature metal-insulator transitions (MITs) in VO 2 thin films grown on R-plane sapphire. The ability of soft x-rays to induce MIT in VO 2 thin films is confirmed by photoemission spectroscopy and soft x-ray spectroscopy measurements. When irradiation was discontinued, the systems do not return to the insulating phase. Analysis of valence band photoemission spectra revealed that the density of states (DOSs) of the V 3d band increased with irradiation time, while the DOS of the O 2p band decreased. We use these results to propose a model in which the MIT is driven by oxygen desorption from thin films during irradiation. As a strongly correlated transition metal oxide, VO 2 is an interesting and valuable material both for expanding our understanding of fundamental physics and for potential applications due to its particular metal-insulator transition (MIT). At 340 K, the resistance of bulk VO 2 exhibits a large jump (up to 5 orders of magnitude), accompanied by first order crystal phase transition from a room temperature monoclinic phase to a high temperature tetragonal phase.1,2 The origin of the MIT has been widely discussed since electron–phonon interactionmore » (Peierls type) or electron–electron interaction (Mott–Hubbard type) could play a key role in inducing the occurrence of the MIT.3–7 Furthermore, these characteristics of the VO 2.« less

Authors:
ORCiD logo [1];  [2];  [3]; ORCiD logo [4];  [5];  [3];  [6]
  1. Boston Univ., MA (United States); Central Univ. of Kashmir (India)
  2. Univ. of Auckland (New Zealand)
  3. Univ. of California, San Diego, CA (United States)
  4. Univ. of California, San Diego, CA (United States); Univ. de los Andes, Bogota (Columbia)
  5. Boston Univ., MA (United States)
  6. Boston Univ., MA (United States); Univ. of Auckland (New Zealand)
Publication Date:
Research Org.:
Boston Univ., MA (United States); Univ. of California, San Diego, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1505563
Alternate Identifier(s):
OSTI ID: 1413073
Grant/Contract Number:  
FG02-98ER45680; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 24; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Singh, V. R., Jovic, V., Valmianski, I., Ramirez, J. G., Lamoureux, B., Schuller, Ivan K., and Smith, K. E. Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation. United States: N. p., 2017. Web. doi:10.1063/1.5012940.
Singh, V. R., Jovic, V., Valmianski, I., Ramirez, J. G., Lamoureux, B., Schuller, Ivan K., & Smith, K. E. Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation. United States. doi:10.1063/1.5012940.
Singh, V. R., Jovic, V., Valmianski, I., Ramirez, J. G., Lamoureux, B., Schuller, Ivan K., and Smith, K. E. Mon . "Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation". United States. doi:10.1063/1.5012940. https://www.osti.gov/servlets/purl/1505563.
@article{osti_1505563,
title = {Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation},
author = {Singh, V. R. and Jovic, V. and Valmianski, I. and Ramirez, J. G. and Lamoureux, B. and Schuller, Ivan K. and Smith, K. E.},
abstractNote = {In this study, we show the ability of soft x-ray irradiation to induce room temperature metal-insulator transitions (MITs) in VO2 thin films grown on R-plane sapphire. The ability of soft x-rays to induce MIT in VO2 thin films is confirmed by photoemission spectroscopy and soft x-ray spectroscopy measurements. When irradiation was discontinued, the systems do not return to the insulating phase. Analysis of valence band photoemission spectra revealed that the density of states (DOSs) of the V 3d band increased with irradiation time, while the DOS of the O 2p band decreased. We use these results to propose a model in which the MIT is driven by oxygen desorption from thin films during irradiation. As a strongly correlated transition metal oxide, VO2 is an interesting and valuable material both for expanding our understanding of fundamental physics and for potential applications due to its particular metal-insulator transition (MIT). At 340 K, the resistance of bulk VO2 exhibits a large jump (up to 5 orders of magnitude), accompanied by first order crystal phase transition from a room temperature monoclinic phase to a high temperature tetragonal phase.1,2 The origin of the MIT has been widely discussed since electron–phonon interaction (Peierls type) or electron–electron interaction (Mott–Hubbard type) could play a key role in inducing the occurrence of the MIT.3–7 Furthermore, these characteristics of the VO2.},
doi = {10.1063/1.5012940},
journal = {Applied Physics Letters},
number = 24,
volume = 111,
place = {United States},
year = {2017},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

FIG. 1 FIG. 1: Valance band photoemission spectra at 0 min and 60 min of irradiation for VO2 (100) thin films. The samples were irradiated with 250 eV photons carrying a flux density of 3 x 1015 photons s-1 cm-2. Spectra were recorded at room temperature and are offset for clarity. Themore » red dotted line represents valence band spectra recorded 60 min after irradiation was stopped.« less

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.