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Title: Observation of highly dispersive bands in pure thin film C 60

Abstract

While long-theorized, the direct observation of multiple highly dispersive $${\mathrm{C}}_{60}$$ valence bands has eluded researchers for more than two decades due to a variety of intrinsic and extrinsic factors. We report a realization of multiple highly dispersive (330–520 meV) valence bands in pure thin film $${\mathrm{C}}_{60}$$ on a novel substrate—the three-dimensional topological insulator $${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$$—through the use of angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The effects of this novel substrate reducing $${\mathrm{C}}_{60}$$ rotational disorder are discussed. Our results provide important considerations for past and future band structure studies as well as the increasingly popular $${\mathrm{C}}_{60}$$ electronic device applications, especially those making use of heterostructures.

Authors:
 [1];  [2];  [3];  [4];  [5];  [6];  [7]
  1. Univ. of California, Berkeley, CA (United States). Applied Science & Technology; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  2. California State Univ. (CalState), Long Beach, CA (United States). Dept. of Physics and Astronomy
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry; Univ. of California, Berkeley, CA (United States). Dept. of Physics
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry. Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Dept. of Physics. Kavli Energy NanoSciences Inst.
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Dept. of Physics. Kavli Energy NanoSciences Inst.
  7. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Dept. of Physics
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); California State Univ. (CalState), Long Beach, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1505525
Alternate Identifier(s):
OSTI ID: 1491229
Grant/Contract Number:  
AC02-05CH11231; SC0018154
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 99; Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electronic structure; fullerenes; multilayer thin films; strongly correlated systems; angle-resolved photoemission spectroscopy; density functional theory

Citation Formats

Latzke, Drew W., Ojeda-Aristizabal, Claudia, Griffin, Sinéad M., Denlinger, Jonathan D., Neaton, Jeffrey B., Zettl, Alex, and Lanzara, Alessandra. Observation of highly dispersive bands in pure thin film C60. United States: N. p., 2019. Web. doi:10.1103/physrevb.99.045425.
Latzke, Drew W., Ojeda-Aristizabal, Claudia, Griffin, Sinéad M., Denlinger, Jonathan D., Neaton, Jeffrey B., Zettl, Alex, & Lanzara, Alessandra. Observation of highly dispersive bands in pure thin film C60. United States. doi:10.1103/physrevb.99.045425.
Latzke, Drew W., Ojeda-Aristizabal, Claudia, Griffin, Sinéad M., Denlinger, Jonathan D., Neaton, Jeffrey B., Zettl, Alex, and Lanzara, Alessandra. Thu . "Observation of highly dispersive bands in pure thin film C60". United States. doi:10.1103/physrevb.99.045425.
@article{osti_1505525,
title = {Observation of highly dispersive bands in pure thin film C60},
author = {Latzke, Drew W. and Ojeda-Aristizabal, Claudia and Griffin, Sinéad M. and Denlinger, Jonathan D. and Neaton, Jeffrey B. and Zettl, Alex and Lanzara, Alessandra},
abstractNote = {While long-theorized, the direct observation of multiple highly dispersive ${\mathrm{C}}_{60}$ valence bands has eluded researchers for more than two decades due to a variety of intrinsic and extrinsic factors. We report a realization of multiple highly dispersive (330–520 meV) valence bands in pure thin film ${\mathrm{C}}_{60}$ on a novel substrate—the three-dimensional topological insulator ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$—through the use of angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The effects of this novel substrate reducing ${\mathrm{C}}_{60}$ rotational disorder are discussed. Our results provide important considerations for past and future band structure studies as well as the increasingly popular ${\mathrm{C}}_{60}$ electronic device applications, especially those making use of heterostructures.},
doi = {10.1103/physrevb.99.045425},
journal = {Physical Review B},
number = 4,
volume = 99,
place = {United States},
year = {2019},
month = {1}
}

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