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Title: Scanning microwave imaging of optically patterned Ge 2Sb 2Te 5

Abstract

The measurement of inhomogeneous conductivity in optically crystallized, amorphous Ge 2Sb 2Te 5 (GST) films is demonstrated via scanning microwave impedance microscopy (MIM). Qualitative consistency with expectations is demonstrated in spots crystallized by focused coherent light at various intensities, exposure times, and film thicknesses. The characterization of process imperfections is demonstrated when a mask is used to optically pattern the nanoscale features of crystalline GST in the amorphous film. In conclusion, these measurements show the ability of MIM to resolve partial crystallization, patterning faults, and other details in optically patterned GST.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1];  [2]; ORCiD logo [3];  [4];  [2];  [1];  [1];  [1]
  1. Stanford Univ., Stanford, CA (United States)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Ottawa, Ottawa, ON (Canada)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States); European XFEL, Schenefeld (Germany)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1504493
Grant/Contract Number:  
AC02-76SF00515; DMR1305731; GBMF4536
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Johnston, Scott R., Ng, Edwin, Fong, Scott W., Mok, Walter Y., Park, Jeongwon, Zalden, Peter, Sakdinawat, Anne, Wong, H. -S. Philip, Mabuchi, Hideo, and Shen, Zhi -Xun. Scanning microwave imaging of optically patterned Ge2Sb2Te5. United States: N. p., 2019. Web. doi:10.1063/1.5052018.
Johnston, Scott R., Ng, Edwin, Fong, Scott W., Mok, Walter Y., Park, Jeongwon, Zalden, Peter, Sakdinawat, Anne, Wong, H. -S. Philip, Mabuchi, Hideo, & Shen, Zhi -Xun. Scanning microwave imaging of optically patterned Ge2Sb2Te5. United States. doi:10.1063/1.5052018.
Johnston, Scott R., Ng, Edwin, Fong, Scott W., Mok, Walter Y., Park, Jeongwon, Zalden, Peter, Sakdinawat, Anne, Wong, H. -S. Philip, Mabuchi, Hideo, and Shen, Zhi -Xun. Fri . "Scanning microwave imaging of optically patterned Ge2Sb2Te5". United States. doi:10.1063/1.5052018.
@article{osti_1504493,
title = {Scanning microwave imaging of optically patterned Ge2Sb2Te5},
author = {Johnston, Scott R. and Ng, Edwin and Fong, Scott W. and Mok, Walter Y. and Park, Jeongwon and Zalden, Peter and Sakdinawat, Anne and Wong, H. -S. Philip and Mabuchi, Hideo and Shen, Zhi -Xun},
abstractNote = {The measurement of inhomogeneous conductivity in optically crystallized, amorphous Ge2Sb2Te5 (GST) films is demonstrated via scanning microwave impedance microscopy (MIM). Qualitative consistency with expectations is demonstrated in spots crystallized by focused coherent light at various intensities, exposure times, and film thicknesses. The characterization of process imperfections is demonstrated when a mask is used to optically pattern the nanoscale features of crystalline GST in the amorphous film. In conclusion, these measurements show the ability of MIM to resolve partial crystallization, patterning faults, and other details in optically patterned GST.},
doi = {10.1063/1.5052018},
journal = {Applied Physics Letters},
number = 9,
volume = 114,
place = {United States},
year = {2019},
month = {3}
}

Journal Article:
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This content will become publicly available on March 8, 2020
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