Scanning microwave imaging of optically patterned Ge2Sb2Te5

Johnston, Scott R.; Ng, Edwin; Fong, Scott W.; Mok, Walter Y.; Park, Jeongwon; Zalden, Peter; Sakdinawat, Anne; Wong, H. -S. Philip; Mabuchi, Hideo; Shen, Zhi -Xun

doi:10.1063/1.5052018

Title: Scanning microwave imaging of optically patterned Ge₂Sb₂Te₅

Abstract

The measurement of inhomogeneous conductivity in optically crystallized, amorphous Ge₂Sb₂Te₅ (GST) films is demonstrated via scanning microwave impedance microscopy (MIM). Qualitative consistency with expectations is demonstrated in spots crystallized by focused coherent light at various intensities, exposure times, and film thicknesses. The characterization of process imperfections is demonstrated when a mask is used to optically pattern the nanoscale features of crystalline GST in the amorphous film. In conclusion, these measurements show the ability of MIM to resolve partial crystallization, patterning faults, and other details in optically patterned GST.

Authors:

^[1]; Ng, Edwin ^[1];

^[1]; Mok, Walter Y. ^[2];

^[3]; Zalden, Peter ^[4]; Sakdinawat, Anne ^[2]; Wong, H. -S. Philip ^[1]; Mabuchi, Hideo ^[1]; Shen, Zhi -Xun ^[1]

Stanford Univ., Stanford, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Ottawa, Ottawa, ON (Canada)
SLAC National Accelerator Lab., Menlo Park, CA (United States); European XFEL, Schenefeld (Germany)

Publication Date:: Fri Mar 08 00:00:00 EST 2019

Research Org.:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1504493

Grant/Contract Number:: AC02-76SF00515; DMR1305731; GBMF4536

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 114; Journal Issue: 9; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Johnston, Scott R., Ng, Edwin, Fong, Scott W., Mok, Walter Y., Park, Jeongwon, Zalden, Peter, Sakdinawat, Anne, Wong, H. -S. Philip, Mabuchi, Hideo, and Shen, Zhi -Xun. Scanning microwave imaging of optically patterned Ge2Sb2Te5.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5052018.

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                    Johnston, Scott R., Ng, Edwin, Fong, Scott W., Mok, Walter Y., Park, Jeongwon, Zalden, Peter, Sakdinawat, Anne, Wong, H. -S. Philip, Mabuchi, Hideo, & Shen, Zhi -Xun. Scanning microwave imaging of optically patterned Ge2Sb2Te5.  United States.  https://doi.org/10.1063/1.5052018

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                    Johnston, Scott R., Ng, Edwin, Fong, Scott W., Mok, Walter Y., Park, Jeongwon, Zalden, Peter, Sakdinawat, Anne, Wong, H. -S. Philip, Mabuchi, Hideo, and Shen, Zhi -Xun. Fri .  
"Scanning microwave imaging of optically patterned Ge2Sb2Te5".  United States.  https://doi.org/10.1063/1.5052018.  https://www.osti.gov/servlets/purl/1504493.

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@article{osti_1504493,

  title        = {Scanning microwave imaging of optically patterned Ge2Sb2Te5},

  author       = {Johnston, Scott R. and Ng, Edwin and Fong, Scott W. and Mok, Walter Y. and Park, Jeongwon and Zalden, Peter and Sakdinawat, Anne and Wong, H. -S. Philip and Mabuchi, Hideo and Shen, Zhi -Xun},

  abstractNote = {The measurement of inhomogeneous conductivity in optically crystallized, amorphous Ge2Sb2Te5 (GST) films is demonstrated via scanning microwave impedance microscopy (MIM). Qualitative consistency with expectations is demonstrated in spots crystallized by focused coherent light at various intensities, exposure times, and film thicknesses. The characterization of process imperfections is demonstrated when a mask is used to optically pattern the nanoscale features of crystalline GST in the amorphous film. In conclusion, these measurements show the ability of MIM to resolve partial crystallization, patterning faults, and other details in optically patterned GST.},

  doi          = {10.1063/1.5052018},

  journal      = {Applied Physics Letters},

  number       = 9,

  volume       = 114,

  place        = {United States},

  year         = {Fri Mar 08 00:00:00 EST 2019},

  month        = {Fri Mar 08 00:00:00 EST 2019}

}

Copy to clipboard

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Works referenced in this record:

Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM
journal, June 2015

Baek, Kyungjoon; Song, Kyung; Son, Sung Kyu
NPG Asia Materials, Vol. 7, Issue 6
DOI: 10.1038/am.2015.49

Characterization of phase change memory materials using phase change bridge devices
journal, September 2009

Krebs, Daniel; Raoux, Simone; Rettner, Charles T.
Journal of Applied Physics, Vol. 106, Issue 5
DOI: 10.1063/1.3183952

Reversible optical switching of highly confined phonon–polaritons with an ultrathin phase-change material
journal, May 2016

Li, Peining; Yang, Xiaosheng; Maß, Tobias W. W.
Nature Materials, Vol. 15, Issue 8
DOI: 10.1038/nmat4649

Electronic, optical and thermal properties of the hexagonal and rocksalt-like Ge ₂ Sb ₂ Te ₅ chalcogenide from first-principle calculations
journal, September 2011

Tsafack, Thierry; Piccinini, Enrico; Lee, Bong-Sub
Journal of Applied Physics, Vol. 110, Issue 6
DOI: 10.1063/1.3639279

Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory
journal, November 2015

Celano, Umberto; Goux, Ludovic; Degraeve, Robin
Nano Letters, Vol. 15, Issue 12
DOI: 10.1021/acs.nanolett.5b03078

Laser induced crystallization of amorphous Ge2Sb2Te5 films
journal, March 2001

Weidenhof, V.; Friedrich, I.; Ziegler, S.
Journal of Applied Physics, Vol. 89, Issue 6
DOI: 10.1063/1.1351868

Density changes upon crystallization of Ge2Sb2.04Te4.74 films
journal, January 2002

Njoroge, Walter K.; Wöltgens, Han-Willem; Wuttig, Matthias
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, Issue 1
DOI: 10.1116/1.1430249

Direct observation of amorphous to crystalline phase transitions in nanoparticle arrays of phase change materials
journal, November 2007

Raoux, Simone; Rettner, Charles T.; Jordan-Sweet, Jean L.
Journal of Applied Physics, Vol. 102, Issue 9
DOI: 10.1063/1.2801000

Thermal conductivity of phase-change material Ge2Sb2Te5
journal, October 2006

Lyeo, Ho-Ki; Cahill, David G.; Lee, Bong-Sub
Applied Physics Letters, Vol. 89, Issue 15
DOI: 10.1063/1.2359354

Dielectric properties of amorphous phase-change materials
journal, March 2017

Chen, C.; Jost, P.; Volker, H.
Physical Review B, Vol. 95, Issue 9
DOI: 10.1103/PhysRevB.95.094111

Measurement of crystal growth velocity in a melt-quenched phase-change material
journal, August 2013

Salinga, Martin; Carria, Egidio; Kaldenbach, Andreas
Nature Communications, Vol. 4, Issue 1
DOI: 10.1038/ncomms3371

Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging
journal, October 2012

Yang, Yongliang; Lai, Keji; Tang, Qiaochu
Journal of Micromechanics and Microengineering, Vol. 22, Issue 11
DOI: 10.1088/0960-1317/22/11/115040

Phase change materials and phase change memory
journal, August 2014

Raoux, Simone; Xiong, Feng; Wuttig, Matthias
MRS Bulletin, Vol. 39, Issue 8
DOI: 10.1557/mrs.2014.139

Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials
journal, August 2016

Zalden, Peter; Shu, Michael J.; Chen, Frank
Physical Review Letters, Vol. 117, Issue 6
DOI: 10.1103/PhysRevLett.117.067601

How Supercooled Liquid Phase-Change Materials Crystallize: Snapshots after Femtosecond Optical Excitation
journal, August 2015

Zalden, Peter; von Hoegen, Alexander; Landreman, Patrick
Chemistry of Materials, Vol. 27, Issue 16
DOI: 10.1021/acs.chemmater.5b02011

Nanoscale Electronic Inhomogeneity in In ₂ Se ₃ Nanoribbons Revealed by Microwave Impedance Microscopy
journal, March 2009

Lai, Keji; Peng, Hailin; Kundhikanjana, Worasom
Nano Letters, Vol. 9, Issue 3
DOI: 10.1021/nl900222j

Nanoscale microwave microscopy using shielded cantilever probes
journal, April 2011

Lai, Keji; Kundhikanjana, Worasom; Kelly, Michael A.
Applied Nanoscience, Vol. 1, Issue 1
DOI: 10.1007/s13204-011-0002-7

Material Requirements for Reversible Phase Change Optical Recording
journal, January 1991

Rubin, Kurt A.
MRS Proceedings, Vol. 230
DOI: 10.1557/PROC-230-239

Spatially Resolved Thermometry of Resistive Memory Devices
journal, November 2017

Yalon, Eilam; Deshmukh, Sanchit; Muñoz Rojo, Miguel
Scientific Reports, Vol. 7, Issue 1
DOI: 10.1038/s41598-017-14498-3

Phase Change Memory
journal, December 2010

Wong, H. -S. Philip; Raoux, Simone; Kim, SangBum
Proceedings of the IEEE, Vol. 98, Issue 12
DOI: 10.1109/JPROC.2010.2070050

Imaging of phase change materials below a capping layer using correlative infrared near-field microscopy and electron microscopy
journal, October 2015

Lewin, M.; Hauer, B.; Bornhöfft, M.
Applied Physics Letters, Vol. 107, Issue 15
DOI: 10.1063/1.4933102

Microscopic studies of fast phase transformations in GeSbTe films
journal, January 2001

Detemple, Ralf; Friedrich, Inés; Njoroge, Walter
MRS Proceedings, Vol. 674
DOI: 10.1557/PROC-674-V1.8

Color Depth Modulation and Resolution in Phase-Change Material Nanodisplays
journal, March 2016

Ríos, Carlos; Hosseini, Peiman; Taylor, Robert A.
Advanced Materials, Vol. 28, Issue 23
DOI: 10.1002/adma.201506238

Compound materials for reversible, phase‐change optical data storage
journal, September 1986

Chen, M.; Rubin, K. A.; Barton, R. W.
Applied Physics Letters, Vol. 49, Issue 9
DOI: 10.1063/1.97617

Electrical properties of the Ge2Sb2Te5 thin films for phase change memory application
conference, January 2016

Lazarenko, P. I.; Sherchenkov, A. A.; Kozyukhin, S. A.
REVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION: Proceedings of the 35th Annual Review of Progress in Quantitative Nondestructive Evaluation, AIP Conference Proceedings
DOI: 10.1063/1.4945968

Impact of Oxidation on Ge ₂ Sb ₂ Te ₅ and GeTe Phase-Change Properties
journal, January 2012

Gourvest, E.; Pelissier, B.; Vallée, C.
Journal of The Electrochemical Society, Vol. 159, Issue 4
DOI: 10.1149/2.027204jes

Phase-change materials for non-volatile photonic applications
journal, August 2017

Wuttig, M.; Bhaskaran, H.; Taubner, T.
Nature Photonics, Vol. 11, Issue 8
DOI: 10.1038/nphoton.2017.126

Optical properties of pseudobinary GeTe, ${Ge}_{2} {Sb}_{2} {Te}_{5}$ , ${GeSb}_{2} {Te}_{4}$ , ${GeSb}_{4} {Te}_{7}$ , and ${Sb}_{2} {Te}_{3}$ from ellipsometry and density functional theory
journal, September 2009

Park, Jun-Woo; Eom, Seung Hwan; Lee, Hosun
Physical Review B, Vol. 80, Issue 11
DOI: 10.1103/PhysRevB.80.115209

Dielectric properties of amorphous phase-change materials
text, January 2017

Chen, C.; Jost, Peter Christian Georg; Volker, H.
RWTH Aachen University
DOI: 10.18154/rwth-2017-03888

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy
text, January 2009

Lai, Keji; Peng, Hailin; Kundhikanjana, Worasom
arXiv
DOI: 10.48550/arxiv.0902.2255

Picosecond electric-field-induced threshold switching in phase-change materials
text, January 2016

Zalden, Peter; Shu, Michael J.; Chen, Frank
arXiv
DOI: 10.48550/arxiv.1602.01885

Spatially Resolved Thermometry of Resistive Memory Devices
preprint, January 2017

Yalon, Eilam; Deshmukh, Sanchit; Rojo, Miguel Muñoz
arXiv
DOI: 10.48550/arxiv.1706.02318

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Title: Scanning microwave imaging of optically patterned Ge2Sb2Te5

Abstract

Citation Formats

Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM journal, June 2015

Characterization of phase change memory materials using phase change bridge devices journal, September 2009

Reversible optical switching of highly confined phonon–polaritons with an ultrathin phase-change material journal, May 2016

Electronic, optical and thermal properties of the hexagonal and rocksalt-like Ge 2 Sb 2 Te 5 chalcogenide from first-principle calculations journal, September 2011

Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory journal, November 2015

Laser induced crystallization of amorphous Ge2Sb2Te5 films journal, March 2001

Density changes upon crystallization of Ge2Sb2.04Te4.74 films journal, January 2002

Direct observation of amorphous to crystalline phase transitions in nanoparticle arrays of phase change materials journal, November 2007

Thermal conductivity of phase-change material Ge2Sb2Te5 journal, October 2006

Dielectric properties of amorphous phase-change materials journal, March 2017

Measurement of crystal growth velocity in a melt-quenched phase-change material journal, August 2013

Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging journal, October 2012

Phase change materials and phase change memory journal, August 2014

Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials journal, August 2016

How Supercooled Liquid Phase-Change Materials Crystallize: Snapshots after Femtosecond Optical Excitation journal, August 2015

Nanoscale Electronic Inhomogeneity in In 2 Se 3 Nanoribbons Revealed by Microwave Impedance Microscopy journal, March 2009

Nanoscale microwave microscopy using shielded cantilever probes journal, April 2011

Material Requirements for Reversible Phase Change Optical Recording journal, January 1991

Spatially Resolved Thermometry of Resistive Memory Devices journal, November 2017

Phase Change Memory journal, December 2010

Imaging of phase change materials below a capping layer using correlative infrared near-field microscopy and electron microscopy journal, October 2015

Microscopic studies of fast phase transformations in GeSbTe films journal, January 2001

Color Depth Modulation and Resolution in Phase-Change Material Nanodisplays journal, March 2016

Compound materials for reversible, phase‐change optical data storage journal, September 1986

Electrical properties of the Ge2Sb2Te5 thin films for phase change memory application conference, January 2016

Impact of Oxidation on Ge 2 Sb 2 Te 5 and GeTe Phase-Change Properties journal, January 2012

Phase-change materials for non-volatile photonic applications journal, August 2017

Optical properties of pseudobinary GeTe, Ge 2 Sb 2 Te 5 , GeSb 2 Te 4 , GeSb 4 Te 7 , and Sb 2 Te 3 from ellipsometry and density functional theory journal, September 2009

Dielectric properties of amorphous phase-change materials text, January 2017

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy text, January 2009

Picosecond electric-field-induced threshold switching in phase-change materials text, January 2016

Spatially Resolved Thermometry of Resistive Memory Devices preprint, January 2017

Title: Scanning microwave imaging of optically patterned Ge₂Sb₂Te₅

Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM
journal, June 2015

Characterization of phase change memory materials using phase change bridge devices
journal, September 2009

Reversible optical switching of highly confined phonon–polaritons with an ultrathin phase-change material
journal, May 2016

Electronic, optical and thermal properties of the hexagonal and rocksalt-like Ge ₂ Sb ₂ Te ₅ chalcogenide from first-principle calculations
journal, September 2011

Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory
journal, November 2015

Laser induced crystallization of amorphous Ge2Sb2Te5 films
journal, March 2001

Density changes upon crystallization of Ge2Sb2.04Te4.74 films
journal, January 2002

Direct observation of amorphous to crystalline phase transitions in nanoparticle arrays of phase change materials
journal, November 2007

Thermal conductivity of phase-change material Ge2Sb2Te5
journal, October 2006

Dielectric properties of amorphous phase-change materials
journal, March 2017

Measurement of crystal growth velocity in a melt-quenched phase-change material
journal, August 2013

Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging
journal, October 2012

Phase change materials and phase change memory
journal, August 2014

Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials
journal, August 2016

How Supercooled Liquid Phase-Change Materials Crystallize: Snapshots after Femtosecond Optical Excitation
journal, August 2015

Nanoscale Electronic Inhomogeneity in In ₂ Se ₃ Nanoribbons Revealed by Microwave Impedance Microscopy
journal, March 2009

Nanoscale microwave microscopy using shielded cantilever probes
journal, April 2011

Material Requirements for Reversible Phase Change Optical Recording
journal, January 1991

Spatially Resolved Thermometry of Resistive Memory Devices
journal, November 2017

Phase Change Memory
journal, December 2010

Imaging of phase change materials below a capping layer using correlative infrared near-field microscopy and electron microscopy
journal, October 2015

Microscopic studies of fast phase transformations in GeSbTe films
journal, January 2001

Color Depth Modulation and Resolution in Phase-Change Material Nanodisplays
journal, March 2016

Compound materials for reversible, phase‐change optical data storage
journal, September 1986

Electrical properties of the Ge2Sb2Te5 thin films for phase change memory application
conference, January 2016

Impact of Oxidation on Ge ₂ Sb ₂ Te ₅ and GeTe Phase-Change Properties
journal, January 2012

Phase-change materials for non-volatile photonic applications
journal, August 2017

Optical properties of pseudobinary GeTe, ${Ge}_{2} {Sb}_{2} {Te}_{5}$ , ${GeSb}_{2} {Te}_{4}$ , ${GeSb}_{4} {Te}_{7}$ , and ${Sb}_{2} {Te}_{3}$ from ellipsometry and density functional theory
journal, September 2009

Dielectric properties of amorphous phase-change materials
text, January 2017

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy
text, January 2009

Picosecond electric-field-induced threshold switching in phase-change materials
text, January 2016

Spatially Resolved Thermometry of Resistive Memory Devices
preprint, January 2017