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Title: Negative differential resistance and quantum oscillations in FeSb 2 with embedded antimony

Abstract

We present a systematical study on single crystalline FeSb 2 using electrical transport and magnetic torque measurements at low temperatures. Nonlinear magnetic field dependence of Hall resistivity demonstrates a multi-carrier transport instinct of the electronic transport. Current-controlled negative differential resistance (CC-NDR) observed in current–voltage characteristics below ~ 7 K is closely associated with the intrinsic transition ~ 5 K of FeSb 2, which is, however, mediated by extrinsic current-induced Joule heating effect. The antimony crystallized in a preferred orientation within the FeSb 2 lattice in the high-temperature synthesis process leaves its fingerprint in the de Haas-Van Alphen (dHvA) oscillations, and results in the regular angular dependence of the oscillating frequencies. Nevertheless, possible existence of intrinsic non-trivial states cannot be completely ruled out. Our findings call for further theoretical and experimental studies to explore novel physics on flux-free grown FeSb 2 crystals.

Authors:
 [1];  [2]; ORCiD logo [2];  [3];  [4];  [5]
  1. Renmin Univ. of China, Beijing (China). Dept. of Physics and Beijing Key Lab. of Optoelectronic Functional Materials & Micro-nano Devices; Southern Univ. of Science and Technology, Shenzhen (China). Shenzhen Inst. for Quantum Science and Engineering, Dept. of Physics
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Stony Brook Univ., NY (United States). Dept. of Materials Science and Chemical Engineering
  3. Renmin Univ. of China, Beijing (China). Dept. of Physics and Beijing Key Lab. of Optoelectronic Functional Materials & Micro-nano Devices
  4. Chongqing Univ., Chongqing (China). Chongqing Key Lab. of Soft Condensed Matter Physics and Smart Materials, College of Physics
  5. Southern Univ. of Science and Technology, Shenzhen (China). Shenzhen Inst. for Quantum Science and Engineering, Dept. of Physics
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Natural Science Foundation of China (NNSFC); Shenzhen Fundamental Subject Research Program of China
OSTI Identifier:
1504377
Report Number(s):
BNL-211492-2019-JAAM
Journal ID: ISSN 1674-1056
Grant/Contract Number:  
SC0012704; 2016ZT06D348; 11874193; JCYJ20170817110751776; JCYJ20170307105434022
Resource Type:
Accepted Manuscript
Journal Name:
Chinese Physics. B
Additional Journal Information:
Journal Volume: 28; Journal Issue: 3; Journal ID: ISSN 1674-1056
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; two-carrier transport; negative differential resistance; quantum oscillations; FeSb2 with embedded antimony

Citation Formats

Tang, Fangdong, Du, Qianheng, Petrovic, Cedomir, Zhang, Wei, He, Mingquan, and Zhang, Liyuan. Negative differential resistance and quantum oscillations in FeSb2 with embedded antimony. United States: N. p., 2019. Web. doi:10.1088/1674-1056/28/3/037104.
Tang, Fangdong, Du, Qianheng, Petrovic, Cedomir, Zhang, Wei, He, Mingquan, & Zhang, Liyuan. Negative differential resistance and quantum oscillations in FeSb2 with embedded antimony. United States. doi:10.1088/1674-1056/28/3/037104.
Tang, Fangdong, Du, Qianheng, Petrovic, Cedomir, Zhang, Wei, He, Mingquan, and Zhang, Liyuan. Fri . "Negative differential resistance and quantum oscillations in FeSb2 with embedded antimony". United States. doi:10.1088/1674-1056/28/3/037104.
@article{osti_1504377,
title = {Negative differential resistance and quantum oscillations in FeSb2 with embedded antimony},
author = {Tang, Fangdong and Du, Qianheng and Petrovic, Cedomir and Zhang, Wei and He, Mingquan and Zhang, Liyuan},
abstractNote = {We present a systematical study on single crystalline FeSb2 using electrical transport and magnetic torque measurements at low temperatures. Nonlinear magnetic field dependence of Hall resistivity demonstrates a multi-carrier transport instinct of the electronic transport. Current-controlled negative differential resistance (CC-NDR) observed in current–voltage characteristics below ~ 7 K is closely associated with the intrinsic transition ~ 5 K of FeSb2, which is, however, mediated by extrinsic current-induced Joule heating effect. The antimony crystallized in a preferred orientation within the FeSb2 lattice in the high-temperature synthesis process leaves its fingerprint in the de Haas-Van Alphen (dHvA) oscillations, and results in the regular angular dependence of the oscillating frequencies. Nevertheless, possible existence of intrinsic non-trivial states cannot be completely ruled out. Our findings call for further theoretical and experimental studies to explore novel physics on flux-free grown FeSb2 crystals.},
doi = {10.1088/1674-1056/28/3/037104},
journal = {Chinese Physics. B},
number = 3,
volume = 28,
place = {United States},
year = {2019},
month = {3}
}

Journal Article:
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This content will become publicly available on March 1, 2020
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