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Title: Room‐Temperature Ferromagnetism in MoTe 2 by Post‐Growth Incorporation of Vanadium Impurities

Authors:
 [1]; ORCiD logo [2];  [1];  [1];  [2];  [1]; ORCiD logo [3]; ORCiD logo [1]
  1. Department of PhysicsUniversity of South Florida Tampa FL 33620 USA
  2. Department of Applied PhysicsAalto University 00076 Aalto Finland
  3. Department of Applied PhysicsAalto University 00076 Aalto Finland, Institute of Ion Beam Physics and Materials ResearchHelmholtz‐Zentrum Dresden‐Rossendorf 01328 Dresden Germany
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1504295
Grant/Contract Number:  
DE‐FG02‐07ER46438
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials Journal Volume: 5 Journal Issue: 5; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United States
Language:
English

Citation Formats

Coelho, Paula Mariel, Komsa, Hannu‐Pekka, Lasek, Kinga, Kalappattil, Vijaysankar, Karthikeyan, Jeyakumar, Phan, Manh‐Huong, Krasheninnikov, Arkady V., and Batzill, Matthias. Room‐Temperature Ferromagnetism in MoTe 2 by Post‐Growth Incorporation of Vanadium Impurities. United States: N. p., 2019. Web. doi:10.1002/aelm.201900044.
Coelho, Paula Mariel, Komsa, Hannu‐Pekka, Lasek, Kinga, Kalappattil, Vijaysankar, Karthikeyan, Jeyakumar, Phan, Manh‐Huong, Krasheninnikov, Arkady V., & Batzill, Matthias. Room‐Temperature Ferromagnetism in MoTe 2 by Post‐Growth Incorporation of Vanadium Impurities. United States. doi:10.1002/aelm.201900044.
Coelho, Paula Mariel, Komsa, Hannu‐Pekka, Lasek, Kinga, Kalappattil, Vijaysankar, Karthikeyan, Jeyakumar, Phan, Manh‐Huong, Krasheninnikov, Arkady V., and Batzill, Matthias. Fri . "Room‐Temperature Ferromagnetism in MoTe 2 by Post‐Growth Incorporation of Vanadium Impurities". United States. doi:10.1002/aelm.201900044.
@article{osti_1504295,
title = {Room‐Temperature Ferromagnetism in MoTe 2 by Post‐Growth Incorporation of Vanadium Impurities},
author = {Coelho, Paula Mariel and Komsa, Hannu‐Pekka and Lasek, Kinga and Kalappattil, Vijaysankar and Karthikeyan, Jeyakumar and Phan, Manh‐Huong and Krasheninnikov, Arkady V. and Batzill, Matthias},
abstractNote = {},
doi = {10.1002/aelm.201900044},
journal = {Advanced Electronic Materials},
number = 5,
volume = 5,
place = {United States},
year = {2019},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on March 31, 2020
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