Title: Room‐Temperature Ferromagnetism in MoTe ₂ by Post‐Growth Incorporation of Vanadium Impurities

Abstract

Abstract Post‐synthesis doping of 2D materials is demonstrated by incorporation of vapor‐deposited transition metals into a MoTe ₂ lattice. Using this approach, vanadium doping of 2H‐MoTe ₂ produces a 2D ferromagnetic semiconductor with a Curie temperature above room temperature (RT). Surprisingly, ferromagnetic properties can be induced with very low vanadium concentrations, down to ≈0.2%. The vanadium species introduced at RT are metastable, and annealing to above ≈500 K results in the formation of a thermodynamically favored impurity configuration that, however, exhibits reduced ferromagnetic properties. Doping with titanium, instead of vanadium, shows a similar incorporation behavior, but no ferromagnetism is induced in MoTe ₂ . This indicates that the type of impurities in addition to their atomic configuration is responsible for the induced magnetism. The interpretation of the experimental results is consistent with ab initio calculations, which confirm that the proposed vanadium impurity configurations exhibit magnetic moments, in contrast to the same configurations with titanium impurities. This study illustrates the possibility to induce ferromagnetic properties in layered van der Waals semiconductors by controlled magnetic impurity doping and thus to add magnetic functionalities to 2D materials.

Authors:

Coelho, Paula Mariel ^[1]; Komsa, Hannu‐Pekka  ^[2];

• Search DOE PAGES for author "Komsa, Hannu‐Pekka"
• Search DOE PAGES for ORCID "0000-0002-0970-0957"

Lasek, Kinga ^[1]; Kalappattil, Vijaysankar ^[1]; Karthikeyan, Jeyakumar ^[2]; Phan, Manh‐Huong ^[1]; Krasheninnikov, Arkady V.  ^[3];

• Search DOE PAGES for author "Krasheninnikov, Arkady V."
• Search DOE PAGES for ORCID "0000-0003-0074-7588"

Batzill, Matthias  ^[1]

• Search DOE PAGES for author "Batzill, Matthias"
• Search DOE PAGES for ORCID "0000-0001-8984-8427"

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+ Show Author Affiliations

1. Department of Physics University of South Florida Tampa FL 33620 USA
2. Department of Applied Physics Aalto University 00076 Aalto Finland
3. Department of Applied Physics Aalto University 00076 Aalto Finland, Institute of Ion Beam Physics and Materials Research Helmholtz‐Zentrum Dresden‐Rossendorf 01328 Dresden Germany

Publication Date:

Mon Apr 01 00:00:00 EDT 2019

Sponsoring Org.:

USDOE

OSTI Identifier:

1504295

Grant/Contract Number:  

DE‐FG02‐07ER46438

Resource Type:

Publisher's Accepted Manuscript

Journal Name:

Advanced Electronic Materials

Additional Journal Information:

Journal Name: Advanced Electronic Materials Journal Volume: 5 Journal Issue: 5; Journal ID: ISSN 2199-160X

Publisher:

Wiley Blackwell (John Wiley & Sons)

Country of Publication:

United States

Language:

English