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Title: Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics [Probing spin-phonon interactions in silicon carbide with Gaussian acoustics]

Abstract

Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with low acoustic losses, making them natural candidates for integration with high quality factor mechanical resonators. Here, we show Gaussian focusing of a surface acoustic wave in SiC, characterized by a novel stroboscopic X-ray diffraction imaging technique, which delivers direct, strain amplitude information at nanoscale spatial resolution. Using ab initio calculations, we provide a more complete picture of spin-strain coupling for various defects in SiC with C 3v symmetry. This reveals the importance of shear for future device engineering and enhanced spin-mechanical coupling. We demonstrate all-optical detection of acoustic paramagnetic resonance without microwave magnetic fields, relevant to sensing applications. Lastly, we show mechanically driven Autler-Townes splittings and magnetically forbidden Rabi oscillations. These results offer a basis for full strain control of three-level spin systems.

Authors:
 [1];  [2];  [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [3];  [4];  [5];  [5];  [1];  [5]; ORCiD logo [5]
  1. Univ. of Chicago, Chicago, IL (United States)
  2. Univ. of Chicago, Chicago, IL (United States); Tohoku Univ., Sendai (Japan)
  3. Univ. of Chicago, Chicago, IL (United States); Univ. of California, Santa Barbara, CA (United States)
  4. Argonne National Lab. (ANL), Lemont, IL (United States)
  5. Univ. of Chicago, Chicago, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
Air Force Research Laboratory (AFRL). Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); University of Chicago. Materials Research Science & Engineering Center (MRSEC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1504277
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Nature Physics
Additional Journal Information:
Journal Volume: 2019; Journal ID: ISSN 1745-2473
Publisher:
Nature Publishing Group (NPG)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Whiteley, Samuel J., Wolfowicz, Gary, Anderson, Christopher P., Bourassa, Alexandre, Ma, He, Ye, Meng, Koolstra, Gerwin, Satzinger, Kevin J., Holt, Martin V., Heremans, F. Joseph, Cleland, Andrew N., Schuster, David I., Galli, Giulia, and Awschalom, David D. Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics [Probing spin-phonon interactions in silicon carbide with Gaussian acoustics]. United States: N. p., 2019. Web. doi:10.1038/s41567-019-0420-0.
Whiteley, Samuel J., Wolfowicz, Gary, Anderson, Christopher P., Bourassa, Alexandre, Ma, He, Ye, Meng, Koolstra, Gerwin, Satzinger, Kevin J., Holt, Martin V., Heremans, F. Joseph, Cleland, Andrew N., Schuster, David I., Galli, Giulia, & Awschalom, David D. Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics [Probing spin-phonon interactions in silicon carbide with Gaussian acoustics]. United States. doi:10.1038/s41567-019-0420-0.
Whiteley, Samuel J., Wolfowicz, Gary, Anderson, Christopher P., Bourassa, Alexandre, Ma, He, Ye, Meng, Koolstra, Gerwin, Satzinger, Kevin J., Holt, Martin V., Heremans, F. Joseph, Cleland, Andrew N., Schuster, David I., Galli, Giulia, and Awschalom, David D. Mon . "Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics [Probing spin-phonon interactions in silicon carbide with Gaussian acoustics]". United States. doi:10.1038/s41567-019-0420-0.
@article{osti_1504277,
title = {Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics [Probing spin-phonon interactions in silicon carbide with Gaussian acoustics]},
author = {Whiteley, Samuel J. and Wolfowicz, Gary and Anderson, Christopher P. and Bourassa, Alexandre and Ma, He and Ye, Meng and Koolstra, Gerwin and Satzinger, Kevin J. and Holt, Martin V. and Heremans, F. Joseph and Cleland, Andrew N. and Schuster, David I. and Galli, Giulia and Awschalom, David D.},
abstractNote = {Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with low acoustic losses, making them natural candidates for integration with high quality factor mechanical resonators. Here, we show Gaussian focusing of a surface acoustic wave in SiC, characterized by a novel stroboscopic X-ray diffraction imaging technique, which delivers direct, strain amplitude information at nanoscale spatial resolution. Using ab initio calculations, we provide a more complete picture of spin-strain coupling for various defects in SiC with C3v symmetry. This reveals the importance of shear for future device engineering and enhanced spin-mechanical coupling. We demonstrate all-optical detection of acoustic paramagnetic resonance without microwave magnetic fields, relevant to sensing applications. Lastly, we show mechanically driven Autler-Townes splittings and magnetically forbidden Rabi oscillations. These results offer a basis for full strain control of three-level spin systems.},
doi = {10.1038/s41567-019-0420-0},
journal = {Nature Physics},
number = ,
volume = 2019,
place = {United States},
year = {2019},
month = {2}
}

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This content will become publicly available on February 11, 2020
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