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Title: Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy

Abstract

Co2-xMn1+xSi films with various composition x were epitaxially grown using molecular beam epitaxy (MBE). High crystallinity and atomic ordering in the prepared Co2-xMn1+xSi films were observed, and their magnetic damping and anisotropic magnetoresistance (AMR) effect were systematically investigated. An ultra-low magnetic damping constant of 0.0007 was obtained in the Co2-xMn1+xSi film with a valence electron number (NV) of about 29.0. Additionally, a relatively large negative AMR effect was observed in the Co2-xMn1+xSi films that had a NV of about 29.0. This low damping and the large negative AMR effect indicate that epitaxial Co2-xMn1+xSi films with high atomic ordering grown by MBE possess a high-spin polarization. Half-metals have potential for enhancing the performance of various kinds of spintronic devices, such as magnetic sensors and magnetic random access memory (MRAM) devices, because the conduction electrons are completely spin-polarized due to the Fermi level (EF) being in the energy gap of one of the spin channels. Among the half-metals, Co-based Heusler alloys are expected to show half-metallic properties at room temperature due to their high Curie temperature. In the past decade, high tunnel magnetoresistance (TMR) and current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) have been experimentally demonstrated using Co-based Heusler alloy electrodes. Furthermore, further improvement ofmore » their half-metallic properties is required to obtain improved performance in magnetic tunnel junctions (MTJs) and CPP-GMR devices.« less

Authors:
 [1];  [2]; ORCiD logo [1];  [1];  [1]; ORCiD logo [2]
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  1. Tohoku Univ., Sendai (Japan)
  2. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1503633
Alternate Identifier(s):
OSTI ID: 1457492
Grant/Contract Number:  
SC0014388
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 26; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Oogane, Mikihiko, McFadden, Anthony P., Fukuda, Kenji, Tsunoda, Masakiyo, Ando, Yasuo, and Palmstrøm, Chris J. Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy. United States: N. p., 2018. Web. doi:10.1063/1.5030341.
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Oogane, Mikihiko, McFadden, Anthony P., Fukuda, Kenji, Tsunoda, Masakiyo, Ando, Yasuo, & Palmstrøm, Chris J. Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy. United States. https://doi.org/10.1063/1.5030341
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Oogane, Mikihiko, McFadden, Anthony P., Fukuda, Kenji, Tsunoda, Masakiyo, Ando, Yasuo, and Palmstrøm, Chris J. Wed . "Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy". United States. https://doi.org/10.1063/1.5030341. https://www.osti.gov/servlets/purl/1503633.
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@article{osti_1503633,
title = {Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy},
author = {Oogane, Mikihiko and McFadden, Anthony P. and Fukuda, Kenji and Tsunoda, Masakiyo and Ando, Yasuo and Palmstrøm, Chris J.},
abstractNote = {Co2-xMn1+xSi films with various composition x were epitaxially grown using molecular beam epitaxy (MBE). High crystallinity and atomic ordering in the prepared Co2-xMn1+xSi films were observed, and their magnetic damping and anisotropic magnetoresistance (AMR) effect were systematically investigated. An ultra-low magnetic damping constant of 0.0007 was obtained in the Co2-xMn1+xSi film with a valence electron number (NV) of about 29.0. Additionally, a relatively large negative AMR effect was observed in the Co2-xMn1+xSi films that had a NV of about 29.0. This low damping and the large negative AMR effect indicate that epitaxial Co2-xMn1+xSi films with high atomic ordering grown by MBE possess a high-spin polarization. Half-metals have potential for enhancing the performance of various kinds of spintronic devices, such as magnetic sensors and magnetic random access memory (MRAM) devices, because the conduction electrons are completely spin-polarized due to the Fermi level (EF) being in the energy gap of one of the spin channels. Among the half-metals, Co-based Heusler alloys are expected to show half-metallic properties at room temperature due to their high Curie temperature. In the past decade, high tunnel magnetoresistance (TMR) and current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) have been experimentally demonstrated using Co-based Heusler alloy electrodes. Furthermore, further improvement of their half-metallic properties is required to obtain improved performance in magnetic tunnel junctions (MTJs) and CPP-GMR devices.},
doi = {10.1063/1.5030341},
journal = {Applied Physics Letters},
number = 26,
volume = 112,
place = {United States},
year = {Wed Jun 27 00:00:00 EDT 2018},
month = {Wed Jun 27 00:00:00 EDT 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.5030341
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Cited by: 17 works
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Figures / Tables:

FIG. 1. FIG. 1.: (a) Film composition as determined by XRF and ICP and (b) the estimated valence electron number in prepared Co2–xMn1+xSi films. Dashed lines indicate the expected composition and the valence electron number from estimated elemental deposition fluxes.
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Works referenced in this record:

CPP-GMR study of half-metallic full-Heusler compound Co2(Fe,Mn)Si
journal, January 2014

  • Sakuraba, Y.; Ueda, M.; Bosu, S.
  • Journal of the Magnetics Society of Japan, Vol. 38, Issue 2-2
  • DOI: 10.3379/msjmag.1403R001

Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe 4 N, and Half-Metallic Ferromagnet: A Systematic Analysis
journal, February 2012

  • Kokado, Satoshi; Tsunoda, Masakiyo; Harigaya, Kikuo
  • Journal of the Physical Society of Japan, Vol. 81, Issue 2
  • DOI: 10.1143/JPSJ.81.024705

Direct evidence for minority spin gap in the C o 2 MnSi Heusler compound
journal, March 2016

Magnetic and chemical order in Heusler alloys containing cobalt and manganese
journal, January 1971

Origin of low Gilbert damping in half metals
journal, July 2009

  • Liu, Chunsheng; Mewes, Claudia K. A.; Chshiev, Mairbek
  • Applied Physics Letters, Vol. 95, Issue 2
  • DOI: 10.1063/1.3157267

Magnetic damping constant in Co-based full heusler alloy epitaxial films
journal, April 2015

Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy
journal, April 2009

  • Tezuka, N.; Ikeda, N.; Mitsuhashi, F.
  • Applied Physics Letters, Vol. 94, Issue 16
  • DOI: 10.1063/1.3116717

First-principles study of the Gilbert damping constants of Heusler alloys based on the torque correlation model
journal, April 2015

Large tunnel magnetoresistance in magnetic tunnel junctions using a Co2MnSi Heusler alloy electrode and a MgO barrier
journal, September 2008

  • Tsunegi, Sumito; Sakuraba, Yuya; Oogane, Mikihiko
  • Applied Physics Letters, Vol. 93, Issue 11
  • DOI: 10.1063/1.2987516

Large Magnetoresistance Effect in Epitaxial Co$_{2}$Fe$_{0.4}$Mn$_{0.6}$Si/Ag/Co$_{2}$Fe$_{0.4}$Mn$_{0.6}$Si Devices
journal, November 2011

  • Sato, Jo; Oogane, Mikihiko; Naganuma, Hiroshi
  • Applied Physics Express, Vol. 4, Issue 11
  • DOI: 10.1143/APEX.4.113005

Giant tunneling magnetoresistance in Co2MnSi∕Al–O∕Co2MnSi magnetic tunnel junctions
journal, May 2006

  • Sakuraba, Y.; Hattori, M.; Oogane, M.
  • Applied Physics Letters, Vol. 88, Issue 19
  • DOI: 10.1063/1.2202724

Half-metallicity and anisotropic magnetoresistance of epitaxial Co 2 FeSi Heusler films
journal, April 2013

  • Yang, F. J.; Wei, C.; Chen, X. Q.
  • Applied Physics Letters, Vol. 102, Issue 17
  • DOI: 10.1063/1.4803537

Extensive study of giant magnetoresistance properties in half-metallic Co 2 (Fe,Mn)Si-based devices
journal, December 2012

  • Sakuraba, Y.; Ueda, M.; Miura, Y.
  • Applied Physics Letters, Vol. 101, Issue 25
  • DOI: 10.1063/1.4772546

Broad-Band FMR Linewidth of Co 2 MnSi Thin Films with Low Damping Factor: The Role of Two-Magnon Scattering
journal, April 2016

Anisotropic magnetoresistance in Co 2 (Fe,Mn)Si Heusler epitaxial films: A fingerprint of half-metallicity
journal, July 2012

Atomic disorder effects on half-metallicity of the full-Heusler alloys Co 2 ( Cr 1 − x Fe x ) Al : A first-principles study
journal, April 2004

Search for Half-Metallic Compounds in Co 2 MnZ (Z=IIIb, IVb, Vb Element)
journal, June 1995

  • Ishida, Shoji; Fujii, Shinpei; Kashiwagi, Shoei
  • Journal of the Physical Society of Japan, Vol. 64, Issue 6
  • DOI: 10.1143/JPSJ.64.2152

Anisotropic Magnetoresistance Effect: General Expression of AMR Ratio and Intuitive Explanation for Sign of AMR Ratio
journal, August 2013

Role of structural defects on the half-metallic character of Co 2 MnGe and Co 2 MnSi Heusler alloys
journal, March 2004

Low damping constant for Co2FeAl Heusler alloy films and its correlation with density of states
journal, April 2009

  • Mizukami, S.; Watanabe, D.; Oogane, M.
  • Journal of Applied Physics, Vol. 105, Issue 7
  • DOI: 10.1063/1.3067607

Enhancement of giant magnetoresistance by L2 1 ordering in Co 2 Fe(Ge 0.5 Ga 0.5 ) Heusler alloy current-perpendicular-to-plane pseudo spin valves
journal, July 2013

  • Li, S.; Takahashi, Y. K.; Furubayashi, T.
  • Applied Physics Letters, Vol. 103, Issue 4
  • DOI: 10.1063/1.4816382

Ferromagnetic Schottky junctions using half-metallic Co 2 MnSi/diamond heterostructures
journal, July 2013

  • Ueda, K.; Soumiya, T.; Nishiwaki, M.
  • Applied Physics Letters, Vol. 103, Issue 5
  • DOI: 10.1063/1.4817295

Slater-Pauling behavior and origin of the half-metallicity of the full-Heusler alloys
journal, November 2002

Oxygen migration in epitaxial CoFe/MgO/Co 2 MnSi magnetic tunnel junctions
journal, September 2017

  • McFadden, Anthony P.; Brown-Heft, Tobias; Pennachio, Dan
  • Journal of Applied Physics, Vol. 122, Issue 11
  • DOI: 10.1063/1.5003089

On the Landau–Lifshitz relaxation in ferromagnetic metals
journal, December 1970

  • Kamberský, V.
  • Canadian Journal of Physics, Vol. 48, Issue 24
  • DOI: 10.1139/p70-361

Gilbert damping constant in polycrystalline CO2MnSi Heusler alloy films
journal, March 2007

Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni2MnGa on (001) GaAs
journal, September 1999

  • Dong, J. W.; Chen, L. C.; Palmstro/m, C. J.
  • Applied Physics Letters, Vol. 75, Issue 10
  • DOI: 10.1063/1.125009

Structural and Magnetic Properties of Co 2 MnSi Thin Film with a Low Damping Constant
journal, May 2015

The microstructure, electronic, and magnetic characterization of highly ordered Co 2 MnSi thin films deposited on MgO substrate
journal, June 2013

  • Yang, F. J.; Chen, X. Q.
  • Applied Physics Letters, Vol. 102, Issue 25
  • DOI: 10.1063/1.4812833

Half-metallicity and Gilbert damping constant in Co2FexMn1−xSi Heusler alloys depending on the film composition
journal, March 2009

  • Kubota, Takahide; Tsunegi, Sumito; Oogane, Mikihiko
  • Applied Physics Letters, Vol. 94, Issue 12
  • DOI: 10.1063/1.3105982

Gilbert magnetic damping constant of epitaxially grown Co-based Heusler alloy thin films
journal, June 2010

  • Oogane, M.; Kubota, T.; Kota, Y.
  • Applied Physics Letters, Vol. 96, Issue 25
  • DOI: 10.1063/1.3456378

Thermodynamics of the Heusler alloy Co 2 − x Mn 1 + x Si : A combined density functional theory and cluster expansion study
journal, March 2009

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    Works referencing / citing this record:

    Large negative anisotropic magnetoresistance in Co 2 MnGa Heusler alloy epitaxial thin films
    journal, September 2018

    • Sato, T.; Kokado, S.; Kosaka, S.
    • Applied Physics Letters, Vol. 113, Issue 11
    • DOI: 10.1063/1.5047821

    Giant anisotropic magnetoresistance and planar Hall effect in Sr 0.06 Bi 2 Se 3
    journal, November 2018

    • Huang, Hui; Gu, Juanjuan; Ji, Ping
    • Applied Physics Letters, Vol. 113, Issue 22
    • DOI: 10.1063/1.5063689

    Polycrystalline Co 2 Mn-based Heusler thin films with high spin polarization and low magnetic damping
    journal, October 2019

    • Guillemard, C.; Petit-Watelot, S.; Rojas-Sánchez, J. -C.
    • Applied Physics Letters, Vol. 115, Issue 17
    • DOI: 10.1063/1.5121614
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