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Title: Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy

Abstract

Co2-xMn1+xSi films with various composition x were epitaxially grown using molecular beam epitaxy (MBE). High crystallinity and atomic ordering in the prepared Co2-xMn1+xSi films were observed, and their magnetic damping and anisotropic magnetoresistance (AMR) effect were systematically investigated. An ultra-low magnetic damping constant of 0.0007 was obtained in the Co2-xMn1+xSi film with a valence electron number (NV) of about 29.0. Additionally, a relatively large negative AMR effect was observed in the Co2-xMn1+xSi films that had a NV of about 29.0. This low damping and the large negative AMR effect indicate that epitaxial Co2-xMn1+xSi films with high atomic ordering grown by MBE possess a high-spin polarization. Half-metals have potential for enhancing the performance of various kinds of spintronic devices, such as magnetic sensors and magnetic random access memory (MRAM) devices, because the conduction electrons are completely spin-polarized due to the Fermi level (EF) being in the energy gap of one of the spin channels. Among the half-metals, Co-based Heusler alloys are expected to show half-metallic properties at room temperature due to their high Curie temperature. In the past decade, high tunnel magnetoresistance (TMR) and current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) have been experimentally demonstrated using Co-based Heusler alloy electrodes. Furthermore, further improvement ofmore » their half-metallic properties is required to obtain improved performance in magnetic tunnel junctions (MTJs) and CPP-GMR devices.« less

Authors:
 [1];  [2]; ORCiD logo [1];  [1];  [1]; ORCiD logo [2]
  1. Tohoku Univ., Sendai (Japan)
  2. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1503633
Alternate Identifier(s):
OSTI ID: 1457492
Grant/Contract Number:  
SC0014388
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 26; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Oogane, Mikihiko, McFadden, Anthony P., Fukuda, Kenji, Tsunoda, Masakiyo, Ando, Yasuo, and Palmstrøm, Chris J.. Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy. United States: N. p., 2018. Web. https://doi.org/10.1063/1.5030341.
Oogane, Mikihiko, McFadden, Anthony P., Fukuda, Kenji, Tsunoda, Masakiyo, Ando, Yasuo, & Palmstrøm, Chris J.. Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy. United States. https://doi.org/10.1063/1.5030341
Oogane, Mikihiko, McFadden, Anthony P., Fukuda, Kenji, Tsunoda, Masakiyo, Ando, Yasuo, and Palmstrøm, Chris J.. Wed . "Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy". United States. https://doi.org/10.1063/1.5030341. https://www.osti.gov/servlets/purl/1503633.
@article{osti_1503633,
title = {Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy},
author = {Oogane, Mikihiko and McFadden, Anthony P. and Fukuda, Kenji and Tsunoda, Masakiyo and Ando, Yasuo and Palmstrøm, Chris J.},
abstractNote = {Co2-xMn1+xSi films with various composition x were epitaxially grown using molecular beam epitaxy (MBE). High crystallinity and atomic ordering in the prepared Co2-xMn1+xSi films were observed, and their magnetic damping and anisotropic magnetoresistance (AMR) effect were systematically investigated. An ultra-low magnetic damping constant of 0.0007 was obtained in the Co2-xMn1+xSi film with a valence electron number (NV) of about 29.0. Additionally, a relatively large negative AMR effect was observed in the Co2-xMn1+xSi films that had a NV of about 29.0. This low damping and the large negative AMR effect indicate that epitaxial Co2-xMn1+xSi films with high atomic ordering grown by MBE possess a high-spin polarization. Half-metals have potential for enhancing the performance of various kinds of spintronic devices, such as magnetic sensors and magnetic random access memory (MRAM) devices, because the conduction electrons are completely spin-polarized due to the Fermi level (EF) being in the energy gap of one of the spin channels. Among the half-metals, Co-based Heusler alloys are expected to show half-metallic properties at room temperature due to their high Curie temperature. In the past decade, high tunnel magnetoresistance (TMR) and current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) have been experimentally demonstrated using Co-based Heusler alloy electrodes. Furthermore, further improvement of their half-metallic properties is required to obtain improved performance in magnetic tunnel junctions (MTJs) and CPP-GMR devices.},
doi = {10.1063/1.5030341},
journal = {Applied Physics Letters},
number = 26,
volume = 112,
place = {United States},
year = {2018},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 9 works
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Figures / Tables:

FIG. 1. FIG. 1.: (a) Film composition as determined by XRF and ICP and (b) the estimated valence electron number in prepared Co2–xMn1+xSi films. Dashed lines indicate the expected composition and the valence electron number from estimated elemental deposition fluxes.

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    Works referencing / citing this record:

    Large negative anisotropic magnetoresistance in Co 2 MnGa Heusler alloy epitaxial thin films
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      Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.