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Title: Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices

Authors:
ORCiD logo [1];  [2];  [1];  [1];  [1]
  1. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93016, USA
  2. Materials Department, University of California Santa Barbara, Santa Barbara, California 93016, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1503057
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 125 Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Gupta, C., Chan, S. H., Pasayat, S. S., Keller, S., and Mishra, U. K. Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices. United States: N. p., 2019. Web. doi:10.1063/1.5082652.
Gupta, C., Chan, S. H., Pasayat, S. S., Keller, S., & Mishra, U. K. Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices. United States. doi:10.1063/1.5082652.
Gupta, C., Chan, S. H., Pasayat, S. S., Keller, S., and Mishra, U. K. Thu . "Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices". United States. doi:10.1063/1.5082652.
@article{osti_1503057,
title = {Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices},
author = {Gupta, C. and Chan, S. H. and Pasayat, S. S. and Keller, S. and Mishra, U. K.},
abstractNote = {},
doi = {10.1063/1.5082652},
journal = {Journal of Applied Physics},
number = 12,
volume = 125,
place = {United States},
year = {2019},
month = {3}
}

Journal Article:
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