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Title: VI3—a New Layered Ferromagnetic Semiconductor

Journal Article · · Advanced Materials
ORCiD logo [1];  [1];  [2];  [3];  [1];  [1];  [1];  [2];  [1]
  1. Princeton Univ., Princeton, NJ (United States)
  2. Ames Lab. and Iowa State Univ., Ames, IA (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)

2D materials are promising candidates for next–generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here the discovery of ferromagnetism is reported in a layered van der Waals semiconductor, VI3, which is based on honeycomb vanadium layers separated by an iodine–iodine van der Waals gap. It has a BiI3–type structure ( R3¯, No.148) at room temperature, and the experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI3 becomes ferromagnetic at 49 K, below which magneto–optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. As a result the optical bandgap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.

Research Organization:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
DMR‐1539918; AC02‐07CH11358; AC02‐98CH10886; AC02-98CH10886
OSTI ID:
1502854
Alternate ID(s):
OSTI ID: 1498569
Report Number(s):
IS-J-9916
Journal Information:
Advanced Materials, Vol. 31, Issue 17; ISSN 0935-9648
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 152 works
Citation information provided by
Web of Science

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Fe 5− x Ge 2 Te 2 —a New Exfoliable Itinerant Ferromagnet with High Curie Temperature and Large Perpendicular Magnetic Anisotropy journal December 2019
The emerging ferroic orderings in two dimensions journal November 2019