VI3—a New Layered Ferromagnetic Semiconductor

Kong, Tai; Stolze, Karoline; Timmons, Erik I.; Tao, Jing; Ni, Danrui; Guo, Shu; Yang, Zoë; Prozorov, Ruslan; Cava, Robert J.

doi:10.1002/adma.201808074

Title: VI₃—a New Layered Ferromagnetic Semiconductor

Journal Article · 06 March 2019 · Advanced Materials

DOI: https://doi.org/10.1002/adma.201808074 · OSTI ID:1502854

^[1]; Stolze, Karoline ^[1]; Timmons, Erik I. ^[2]; Tao, Jing ^[3]; Ni, Danrui ^[1]; Guo, Shu ^[1]; Yang, Zoë ^[1]; Prozorov, Ruslan ^[2]; Cava, Robert J. ^[1]

Princeton Univ., Princeton, NJ (United States)
Ames Lab. and Iowa State Univ., Ames, IA (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

2D materials are promising candidates for next–generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here the discovery of ferromagnetism is reported in a layered van der Waals semiconductor, VI₃, which is based on honeycomb vanadium layers separated by an iodine–iodine van der Waals gap. It has a BiI₃–type structure ( R3¯, No.148) at room temperature, and the experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI₃ becomes ferromagnetic at 49 K, below which magneto–optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. As a result the optical bandgap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.

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Research Organization:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-07CH11358; AC02-98CH10886

OSTI ID:: 1502854

Report Number(s):: IS-J--9916

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 17 Vol. 31; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Controlled Growth and Thickness‐Dependent Conduction‐Type Transition of 2D Ferrimagnetic Cr ₂ S ₃ Semiconductors Cui, Fangfang; Zhao, Xiaoxu; Xu, Junjie Advanced Materials, Vol. 32, Issue 4 https://doi.org/10.1002/adma.201905896	journal	December 2019
Fe _{5− x} Ge ₂ Te ₂ —a New Exfoliable Itinerant Ferromagnet with High Curie Temperature and Large Perpendicular Magnetic Anisotropy Jothi, Palani R.; Scheifers, Jan P.; Zhang, Yuemei physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 3 https://doi.org/10.1002/pssr.201900666	journal	December 2019
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36 MATERIALS SCIENCE
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Title: VI3—a New Layered Ferromagnetic Semiconductor

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Title: VI₃—a New Layered Ferromagnetic Semiconductor