VI3—a New Layered Ferromagnetic Semiconductor
- Princeton Univ., Princeton, NJ (United States)
- Ames Lab. and Iowa State Univ., Ames, IA (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
2D materials are promising candidates for next–generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here the discovery of ferromagnetism is reported in a layered van der Waals semiconductor, VI3, which is based on honeycomb vanadium layers separated by an iodine–iodine van der Waals gap. It has a BiI3–type structure ( R3¯, No.148) at room temperature, and the experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI3 becomes ferromagnetic at 49 K, below which magneto–optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. As a result the optical bandgap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.
- Research Organization:
- Ames Laboratory (AMES), Ames, IA (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- DMR‐1539918; AC02‐07CH11358; AC02‐98CH10886; AC02-98CH10886
- OSTI ID:
- 1502854
- Alternate ID(s):
- OSTI ID: 1498569
- Report Number(s):
- IS-J-9916
- Journal Information:
- Advanced Materials, Vol. 31, Issue 17; ISSN 0935-9648
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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