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Title: VI 3—a New Layered Ferromagnetic Semiconductor

Abstract

2D materials are promising candidates for next–generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here the discovery of ferromagnetism is reported in a layered van der Waals semiconductor, VI 3, which is based on honeycomb vanadium layers separated by an iodine–iodine van der Waals gap. It has a BiI 3–type structure ( R3¯, No.148) at room temperature, and the experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI 3 becomes ferromagnetic at 49 K, below which magneto–optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. As a result the optical bandgap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.

Authors:
ORCiD logo [1];  [1];  [2];  [3];  [1];  [1];  [1];  [2];  [1]
  1. Princeton Univ., Princeton, NJ (United States)
  2. Ames Lab. and Iowa State Univ., Ames, IA (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1502854
Alternate Identifier(s):
OSTI ID: 1498569
Report Number(s):
IS-J-9916
Journal ID: ISSN 0935-9648
Grant/Contract Number:  
DMR‐1539918; AC02‐07CH11358; AC02‐98CH10886; AC02-98CH10886
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 2D material; ferromagnetic; semiconductor; van der Waals

Citation Formats

Kong, Tai, Stolze, Karoline, Timmons, Erik I., Tao, Jing, Ni, Danrui, Guo, Shu, Yang, Zoë, Prozorov, Ruslan, and Cava, Robert J. VI3—a New Layered Ferromagnetic Semiconductor. United States: N. p., 2019. Web. doi:10.1002/adma.201808074.
Kong, Tai, Stolze, Karoline, Timmons, Erik I., Tao, Jing, Ni, Danrui, Guo, Shu, Yang, Zoë, Prozorov, Ruslan, & Cava, Robert J. VI3—a New Layered Ferromagnetic Semiconductor. United States. doi:10.1002/adma.201808074.
Kong, Tai, Stolze, Karoline, Timmons, Erik I., Tao, Jing, Ni, Danrui, Guo, Shu, Yang, Zoë, Prozorov, Ruslan, and Cava, Robert J. Wed . "VI3—a New Layered Ferromagnetic Semiconductor". United States. doi:10.1002/adma.201808074.
@article{osti_1502854,
title = {VI3—a New Layered Ferromagnetic Semiconductor},
author = {Kong, Tai and Stolze, Karoline and Timmons, Erik I. and Tao, Jing and Ni, Danrui and Guo, Shu and Yang, Zoë and Prozorov, Ruslan and Cava, Robert J.},
abstractNote = {2D materials are promising candidates for next–generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here the discovery of ferromagnetism is reported in a layered van der Waals semiconductor, VI3, which is based on honeycomb vanadium layers separated by an iodine–iodine van der Waals gap. It has a BiI3–type structure ( R3¯, No.148) at room temperature, and the experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI3 becomes ferromagnetic at 49 K, below which magneto–optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. As a result the optical bandgap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.},
doi = {10.1002/adma.201808074},
journal = {Advanced Materials},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {3}
}

Journal Article:
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