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Title: Halide Perovskites: Is It All about the Interfaces?

Abstract

Design and modification of interfaces, always a critical issue for semiconductor devices, has become a primary tool to harness the full potential of halide perovskite (HaP)-based optoelectronics, including photovoltaics and light-emitting diodes. In particular, the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review, we describe the unique challenges and opportunities of these approaches (section 1). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surfaces, including topics such as surface termination, surface reactivity, and electronic structure (section 2). This is followed by discussing experimental results on the energetic alignment processes at the interfaces between the HaP and transport and buffer layers. This section includes understandings reached as well as commonly proposed and applied models, especially the often-questionable validity of vacuum level alignment, the importance of interface dipoles, and band bending as the result of interface formation (section 3). We follow this by elaborating on the impact of the interface formation on device performance, considering effects such as chemical reactions and surface passivation on interface energetics and stability. On themore » basis of these concepts, we propose a roadmap for the next steps in interfacial design for HaP semiconductors (section 4), emphasizing the importance of achieving control over the interface energetics and chemistry (i.e., reactivity) to allow predictive power for tailored interface optimization.« less

Authors:
 [1];  [2];  [3]
  1. Institut Photovoltaïque d’Île-de-France (IPVF), Palaiseau (France); National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Weizmann Inst. of Science, Rehovot (Israel)
  3. Princeton Univ., NJ (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1502348
Report Number(s):
NREL/JA-5K00-73498
Journal ID: ISSN 0009-2665
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Chemical Reviews
Additional Journal Information:
Journal Volume: 119; Journal Issue: 5; Journal ID: ISSN 0009-2665
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; halide perovskites; semiconductor devices; interfaces; optoelectronics

Citation Formats

Schulz, Philip, Cahen, David, and Kahn, Antoine. Halide Perovskites: Is It All about the Interfaces?. United States: N. p., 2019. Web. doi:10.1021/acs.chemrev.8b00558.
Schulz, Philip, Cahen, David, & Kahn, Antoine. Halide Perovskites: Is It All about the Interfaces?. United States. doi:10.1021/acs.chemrev.8b00558.
Schulz, Philip, Cahen, David, and Kahn, Antoine. Fri . "Halide Perovskites: Is It All about the Interfaces?". United States. doi:10.1021/acs.chemrev.8b00558.
@article{osti_1502348,
title = {Halide Perovskites: Is It All about the Interfaces?},
author = {Schulz, Philip and Cahen, David and Kahn, Antoine},
abstractNote = {Design and modification of interfaces, always a critical issue for semiconductor devices, has become a primary tool to harness the full potential of halide perovskite (HaP)-based optoelectronics, including photovoltaics and light-emitting diodes. In particular, the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review, we describe the unique challenges and opportunities of these approaches (section 1). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surfaces, including topics such as surface termination, surface reactivity, and electronic structure (section 2). This is followed by discussing experimental results on the energetic alignment processes at the interfaces between the HaP and transport and buffer layers. This section includes understandings reached as well as commonly proposed and applied models, especially the often-questionable validity of vacuum level alignment, the importance of interface dipoles, and band bending as the result of interface formation (section 3). We follow this by elaborating on the impact of the interface formation on device performance, considering effects such as chemical reactions and surface passivation on interface energetics and stability. On the basis of these concepts, we propose a roadmap for the next steps in interfacial design for HaP semiconductors (section 4), emphasizing the importance of achieving control over the interface energetics and chemistry (i.e., reactivity) to allow predictive power for tailored interface optimization.},
doi = {10.1021/acs.chemrev.8b00558},
journal = {Chemical Reviews},
number = 5,
volume = 119,
place = {United States},
year = {2019},
month = {3}
}

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This content will become publicly available on March 1, 2020
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