Carrier transport properties in a thin-film Cu2ZnSnSe4 solar cell
Abstract
We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu2ZnSnSe4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ~60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.
- Authors:
-
- Texas State Univ., San Marcos, TX (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
- National Cheng Kung Univ., Tainan City (Taiwan)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1502347
- Alternate Identifier(s):
- OSTI ID: 1636139
- Report Number(s):
- NREL/JA-5K00-72459
Journal ID: ISSN 0040-6090
- Grant/Contract Number:
- AC36-08GO28308; EE-0007541, 2016
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Thin Solid Films
- Additional Journal Information:
- Journal Volume: 675; Journal Issue: C; Journal ID: ISSN 0040-6090
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; kesterite solar cell; admittance spectroscopy; resistivity; mobility; charge transport; band-tailing; grain boundaries
Citation Formats
Paul, Sanjoy, Gulyas, Istvan, Repins, Ingrid L., Mou, Shin, and Li, Jian V. Carrier transport properties in a thin-film Cu2ZnSnSe4 solar cell. United States: N. p., 2019.
Web. doi:10.1016/j.tsf.2019.01.052.
Paul, Sanjoy, Gulyas, Istvan, Repins, Ingrid L., Mou, Shin, & Li, Jian V. Carrier transport properties in a thin-film Cu2ZnSnSe4 solar cell. United States. https://doi.org/10.1016/j.tsf.2019.01.052
Paul, Sanjoy, Gulyas, Istvan, Repins, Ingrid L., Mou, Shin, and Li, Jian V. Fri .
"Carrier transport properties in a thin-film Cu2ZnSnSe4 solar cell". United States. https://doi.org/10.1016/j.tsf.2019.01.052. https://www.osti.gov/servlets/purl/1502347.
@article{osti_1502347,
title = {Carrier transport properties in a thin-film Cu2ZnSnSe4 solar cell},
author = {Paul, Sanjoy and Gulyas, Istvan and Repins, Ingrid L. and Mou, Shin and Li, Jian V.},
abstractNote = {We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu2ZnSnSe4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ~60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.},
doi = {10.1016/j.tsf.2019.01.052},
journal = {Thin Solid Films},
number = C,
volume = 675,
place = {United States},
year = {Fri Feb 08 00:00:00 EST 2019},
month = {Fri Feb 08 00:00:00 EST 2019}
}
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Works referencing / citing this record:
$${\mathrm{{Cu}}_2\mathrm{{ZnSnS}}_4}$$ thin films prepared with a Joule-heated graphite closed-space sulfurization system
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