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Title: Carrier transport properties in a thin-film Cu 2ZnSnSe 4 solar cell

Abstract

We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ~60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.

Authors:
 [1];  [1];  [2];  [3];  [4]
  1. Texas State Univ., San Marcos, TX (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
  4. National Cheng Kung Univ., Tainan City (Taiwan)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1502347
Report Number(s):
NREL/JA-5K00-72459
Journal ID: ISSN 0040-6090
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Thin Solid Films
Additional Journal Information:
Journal Volume: 675; Journal Issue: C; Journal ID: ISSN 0040-6090
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; kesterite solar cell; admittance spectroscopy; resistivity; mobility; charge transport; band-tailing; grain boundaries

Citation Formats

Paul, Sanjoy, Gulyas, Istvan, Repins, Ingrid L., Mou, Shin, and Li, Jian V. Carrier transport properties in a thin-film Cu2ZnSnSe4 solar cell. United States: N. p., 2019. Web. doi:10.1016/j.tsf.2019.01.052.
Paul, Sanjoy, Gulyas, Istvan, Repins, Ingrid L., Mou, Shin, & Li, Jian V. Carrier transport properties in a thin-film Cu2ZnSnSe4 solar cell. United States. doi:10.1016/j.tsf.2019.01.052.
Paul, Sanjoy, Gulyas, Istvan, Repins, Ingrid L., Mou, Shin, and Li, Jian V. Fri . "Carrier transport properties in a thin-film Cu2ZnSnSe4 solar cell". United States. doi:10.1016/j.tsf.2019.01.052.
@article{osti_1502347,
title = {Carrier transport properties in a thin-film Cu2ZnSnSe4 solar cell},
author = {Paul, Sanjoy and Gulyas, Istvan and Repins, Ingrid L. and Mou, Shin and Li, Jian V.},
abstractNote = {We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu2ZnSnSe4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ~60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.},
doi = {10.1016/j.tsf.2019.01.052},
journal = {Thin Solid Films},
number = C,
volume = 675,
place = {United States},
year = {2019},
month = {2}
}

Journal Article:
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This content will become publicly available on February 8, 2020
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