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Title: Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment

Authors:
 [1] ; ORCiD logo [1] ; ORCiD logo [1] ;  [1] ;  [1] ; ORCiD logo [1] ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87123 USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 114 Journal Issue: 11; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1501722

Klein, Brianna A., Douglas, Erica A., Armstrong, Andrew M., Allerman, Andrew A., Abate, Vincent M., Fortune, Torben R., and Baca, Albert G.. Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment. United States: N. p., Web. doi:10.1063/1.5064543.
Klein, Brianna A., Douglas, Erica A., Armstrong, Andrew M., Allerman, Andrew A., Abate, Vincent M., Fortune, Torben R., & Baca, Albert G.. Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment. United States. doi:10.1063/1.5064543.
Klein, Brianna A., Douglas, Erica A., Armstrong, Andrew M., Allerman, Andrew A., Abate, Vincent M., Fortune, Torben R., and Baca, Albert G.. 2019. "Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment". United States. doi:10.1063/1.5064543.
@article{osti_1501722,
title = {Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment},
author = {Klein, Brianna A. and Douglas, Erica A. and Armstrong, Andrew M. and Allerman, Andrew A. and Abate, Vincent M. and Fortune, Torben R. and Baca, Albert G.},
abstractNote = {},
doi = {10.1063/1.5064543},
journal = {Applied Physics Letters},
number = 11,
volume = 114,
place = {United States},
year = {2019},
month = {3}
}

Works referenced in this record:

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate Dielectrics
journal, March 2010
  • Kanamura, M.; Ohki, T.; Kikkawa, T.
  • IEEE Electron Device Letters, Vol. 31, Issue 3, p. 189-191
  • DOI: 10.1109/LED.2009.2039026