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Title: Identification of point defects using high-resolution electron energy loss spectroscopy

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Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 99 Journal Issue: 11; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

Wang, Shuo, March, Katia, Ponce, Fernando A., and Rez, Peter. Identification of point defects using high-resolution electron energy loss spectroscopy. United States: N. p., 2019. Web. doi:10.1103/PhysRevB.99.115312.
Wang, Shuo, March, Katia, Ponce, Fernando A., & Rez, Peter. Identification of point defects using high-resolution electron energy loss spectroscopy. United States. doi:10.1103/PhysRevB.99.115312.
Wang, Shuo, March, Katia, Ponce, Fernando A., and Rez, Peter. Mon . "Identification of point defects using high-resolution electron energy loss spectroscopy". United States. doi:10.1103/PhysRevB.99.115312.
title = {Identification of point defects using high-resolution electron energy loss spectroscopy},
author = {Wang, Shuo and March, Katia and Ponce, Fernando A. and Rez, Peter},
abstractNote = {},
doi = {10.1103/PhysRevB.99.115312},
journal = {Physical Review B},
number = 11,
volume = 99,
place = {United States},
year = {2019},
month = {3}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1103/PhysRevB.99.115312

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Works referenced in this record:

Formation of Guided Cherenkov Radiation in Silicon-Based Nanocomposites
journal, May 2008

Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy
journal, March 2010

  • Krivanek, Ondrej L.; Chisholm, Matthew F.; Nicolosi, Valeria
  • Nature, Vol. 464, Issue 7288
  • DOI: 10.1038/nature08879

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
journal, January 2012

  • Abid, M.; Moudakir, T.; Orsal, G.
  • Applied Physics Letters, Vol. 100, Issue 5
  • DOI: 10.1063/1.3679703

Atomic core structure of Lomer dislocation at GaAs/(001)Si interface
journal, January 1995

Theoretical investigation of native defects, impurities, and complexes in aluminum nitride
journal, April 2002

Growth of Ga1- xB xN by Molecular Beam Epitaxy
journal, November 1997

  • Vezin, Vincent; Yatagai, Satoshi; Shiraki, Hiroyuki
  • Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 11B
  • DOI: 10.1143/JJAP.36.L1483

Ab initio study of oxygen point defects in GaAs, GaN, and AlN
journal, December 1996

Extracting information from sequences of spatially resolved EELS spectra using multivariate statistical analysis
journal, July 1999

Migration of interstitials in silicon
journal, September 1984

The Theory and Interpretation of Electron Energy Loss Near-Edge Fine Structure
journal, August 2008

Growth of GaBN ternary solutions by organometallic vapor phase epitaxy
journal, March 1997

Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow
journal, October 2017

Band-gap measurements of direct and indirect semiconductors using monochromated electrons
journal, May 2007

Unstable composition region in the wurtzite B1−x−yGaxAlyN system
journal, January 2000

Phonons in Wurtzite Aluminum Nitride
journal, September 1999

Dynamic observation of defect annealing in CdTe at lattice resolution
journal, July 1982

  • Sinclair, R.; Ponce, F. A.; Yamashita, T.
  • Nature, Vol. 298, Issue 5870
  • DOI: 10.1038/298127a0

Vibrational spectroscopy in the electron microscope
journal, October 2014

  • Krivanek, Ondrej L.; Lovejoy, Tracy C.; Dellby, Niklas
  • Nature, Vol. 514, Issue 7521
  • DOI: 10.1038/nature13870

Scattering delocalization and radiation damage in STEM-EELS
journal, September 2017

Z Dependence of Electron Scattering by Single Atoms into Annular Dark-Field Detectors
journal, November 2011

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Luminescence from stacking faults in gallium nitride
journal, January 2005

  • Liu, R.; Bell, A.; Ponce, F. A.
  • Applied Physics Letters, Vol. 86, Issue 2
  • DOI: 10.1063/1.1852085

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Phonon excitations and related thermal properties of aluminum nitride
journal, May 1998

The GW method
journal, March 1998

Three-dimensional imaging of individual hafnium atoms inside a semiconductor device
journal, July 2005

  • van Benthem, Klaus; Lupini, Andrew R.; Kim, Miyoung
  • Applied Physics Letters, Vol. 87, Issue 3
  • DOI: 10.1063/1.1991989

Super-Resolution Fluorescence Microscopy
journal, June 2009

Deciphering chemical order/disorder and material properties at the single-atom level
journal, February 2017

  • Yang, Yongsoo; Chen, Chien-Chun; Scott, M. C.
  • Nature, Vol. 542, Issue 7639
  • DOI: 10.1038/nature21042

Refractive indices of BxAl1−xN (x= 0–0.012) and ByGa1−yN (y= 0–0.023) epitaxial layers in ultraviolet region
journal, December 2003

  • Watanabe, Shunsuke; Takano, Takayohi; Jinen, Keisuke
  • physica status solidi (c), Vol. 0, Issue 7
  • DOI: 10.1002/pssc.200303549

Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE
journal, November 2008

Three-dimensional imaging of dislocations in a nanoparticle at atomic resolution
journal, March 2013

  • Chen, Chien-Chun; Zhu, Chun; White, Edward R.
  • Nature, Vol. 496, Issue 7443
  • DOI: 10.1038/nature12009

The influence of surfaces and interfaces on high spatial resolution vibrational EELS from SiO2
journal, February 2018

  • Venkatraman, Kartik; Rez, Peter; March, Katia
  • Microscopy, Vol. 67, Issue suppl_1
  • DOI: 10.1093/jmicro/dfy003

High-resolution transmission electron microscopy of 60[ddot] dislocations in si-GaAs
journal, May 1989

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain
journal, January 2018

Vacancies in wurtzite GaN and AlN
journal, December 2008

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%: 100-nm thick single-phase wurtzite BAlN films
journal, January 2017

  • Li, Xiaohang; Wang, Shuo; Liu, Hanxiao
  • physica status solidi (b), Vol. 254, Issue 8
  • DOI: 10.1002/pssb.201600699

Optical gap and optically active intragap defects in cubic BN
journal, September 2018

Scattering Cross Sections in Electron Microscopy and Analysis
journal, July 2001

Towards sub-10 meV energy resolution STEM-EELS
journal, June 2014

Point-defect complexes and broadband luminescence in GaN and AlN
journal, April 1997

Damage-free vibrational spectroscopy of biological materials in the electron microscope
journal, March 2016

  • Rez, Peter; Aoki, Toshihiro; March, Katia
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms10945

Growth and Characterization of B x Ga l-x N on 6H-SiC (0001) by MOVPE
journal, January 1998

Point-Defect Nature of the Ultraviolet Absorption Band in AlN
journal, May 2018