Investigating PID Shunting in Polycrystalline CIGS Devices via Multi-Scale, Multi-Technique Characterization

Journal Article · 30 January 2019 · IEEE Journal of Photovoltaics

DOI: https://doi.org/10.1109/JPHOTOV.2019.2892874 · OSTI ID:1501655

Harvey, Steven P. ^[1]; Guthrey, Harvey ^[1]; Muzzillo, Christopher P. ^[1]; Teeter, Glenn ^[1]; Mansfield, Lorelle ^[1]; Hacke, Peter ^[1]; Johnston, Steve ^[1]; Al-Jassim, Mowafak ^[1]

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1. National Renewable Energy Lab. (NREL), Golden, CO (United States)

We investigated potential-induced degradation (PID) in CuIn_1-xGa_xSe₂ (CIGS) mini-modules stressed in the laboratory. Small cores were removed from the modules and were subjected to analysis. We completed a proof-of-concept correlative study relating cathodoluminescence to sodium content via time-of-flight secondary-ion mass spectrometry imaging. By comparing one-dimensional depth profile results and three-dimensional tomography results on stressed and unstressed CIGS mini-modules, we can see that PID in CIGS results from sodium migration through absorber, most likely via grain boundaries. Potassium concentration distributions show little change when adding a voltage bias to a temperature and humidity stress. This suggests doping with other large alkali ions, such as cesium and rubidium, rather than sodium can increase the PID resistance of CIGS modules.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• Grant/Contract Number: AC36-08GO28308
• OSTI ID: 1501655
• Report Number(s): NREL/JA--5K00-71525
• Journal Information: IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 2 Vol. 9; ISSN 2156-3381
• Publisher: IEEECopyright Statement
• Country of Publication: United States
• Language: English