Spontaneous Hall effects in the electron system at the SmTiO₃/EuTiO₃ interface

Journal Article · 04 May 2018 · APL Materials

DOI: https://doi.org/10.1063/1.5025169 · OSTI ID:1501551

Ahadi, Kaveh ^[1]; Kim, Honggyu ^[2]; Stemmer, Susanne ^[2]

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1. Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Materials Department, University of California, Santa Barbara, California 93106-5050, USA
2. Univ. of California, Santa Barbara, CA (United States). Materials Dept.

Magnetotransport and magnetism of epitaxial SmTiO₃/EuTiO₃ heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ~3.9 × 10¹⁴ cm^-2 carriers into the EuTiO₃. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, indicating a non-collinear spin structure, and the second contribution resembles a topological Hall effect. Qualitative differences exist in the temperature dependence of both Hall effects when compared to uniformly doped EuTiO₃. In particular, the topological Hall effect contribution appears at higher temperatures and the anomalous Hall effect shows a sign change with temperature. The results suggest that interfaces can be used to tune topological phenomena in itinerant magnetic systems.

• Research Organization: Univ. of California, Santa Barbara, CA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF) (United States)
• Grant/Contract Number: FG02-02ER45994
• OSTI ID: 1501551
• Journal Information: APL Materials, Journal Name: APL Materials Journal Issue: 5 Vol. 6; ISSN 2166-532X
• Publisher: American Institute of Physics (AIP)Copyright Statement
• Country of Publication: United States
• Language: English