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Title: Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures

Abstract

We report a gate-tunable dimensional crossover in sub-micrometer-scale channels created at the LaAlO3/SrTiO3 interface. Conducting channels of widths 10 nm and 200 nm are created using conducting atomic force microscope lithography. Under sufficient negative back-gate tuning, the orbital magnetoconductance of the 200 nm channel is strongly quenched, and residual signatures of low-field weak-antilocalization become strikingly similar to that of the 10 nm channel. The dimensional crossover for the 200 nm channel takes place near the conductance quantum G = 2e2/h. The ability to tune the dimensionality of narrow LaAlO3/SrTiO3 channels has implications for interpreting transport in a variety of gate-tunable oxide-heterostructure devices.

Authors:
 [1];  [2];  [3];  [3];  [1];  [1];  [1];  [3]; ORCiD logo [1]
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  1. Univ. of Pittsburgh, PA (United States). Dept. of Physics and Astronomy; Pittsburgh Quantum Inst., PA (United States)
  2. Univ. of Pittsburgh, PA (United States). Dept. of Physics and Astronomy
  3. Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering
Publication Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States); Univ. of Pittsburgh, PA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Office of Naval Research (ONR) (United States)
OSTI Identifier:
1501550
Alternate Identifier(s):
OSTI ID: 1399634
Grant/Contract Number:  
FG02-06ER46327; N00014-15-1-2847; FG02-06ER26327
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 10; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; heterostructures; oxides; conductance quantum; transition metals; spin-orbit interactions; superconductivity; electromagnetism; ferroelasticity; electrostatics; thermodynamic states and processes

Citation Formats

Tomczyk, Michelle, Zhou, Rongpu, Lee, Hyungwoo, Lee, Jung-Woo, Cheng, Guanglei, Huang, Mengchen, Irvin, Patrick, Eom, Chang-Beom, and Levy, Jeremy. Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures. United States: N. p., 2017. Web. doi:10.1063/1.4999804.
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Tomczyk, Michelle, Zhou, Rongpu, Lee, Hyungwoo, Lee, Jung-Woo, Cheng, Guanglei, Huang, Mengchen, Irvin, Patrick, Eom, Chang-Beom, & Levy, Jeremy. Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures. United States. https://doi.org/10.1063/1.4999804
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Tomczyk, Michelle, Zhou, Rongpu, Lee, Hyungwoo, Lee, Jung-Woo, Cheng, Guanglei, Huang, Mengchen, Irvin, Patrick, Eom, Chang-Beom, and Levy, Jeremy. Mon . "Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures". United States. https://doi.org/10.1063/1.4999804. https://www.osti.gov/servlets/purl/1501550.
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@article{osti_1501550,
title = {Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures},
author = {Tomczyk, Michelle and Zhou, Rongpu and Lee, Hyungwoo and Lee, Jung-Woo and Cheng, Guanglei and Huang, Mengchen and Irvin, Patrick and Eom, Chang-Beom and Levy, Jeremy},
abstractNote = {We report a gate-tunable dimensional crossover in sub-micrometer-scale channels created at the LaAlO3/SrTiO3 interface. Conducting channels of widths 10 nm and 200 nm are created using conducting atomic force microscope lithography. Under sufficient negative back-gate tuning, the orbital magnetoconductance of the 200 nm channel is strongly quenched, and residual signatures of low-field weak-antilocalization become strikingly similar to that of the 10 nm channel. The dimensional crossover for the 200 nm channel takes place near the conductance quantum G = 2e2/h. The ability to tune the dimensionality of narrow LaAlO3/SrTiO3 channels has implications for interpreting transport in a variety of gate-tunable oxide-heterostructure devices.},
doi = {10.1063/1.4999804},
journal = {APL Materials},
number = 10,
volume = 5,
place = {United States},
year = {2017},
month = {10}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4999804
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Cited by: 5 works
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Figures / Tables:

FIG. 1. FIG. 1. : Device schematic and typical conductance behavior. (a) Schematic of a typical device consisting of two Hall bar structures of widths ω1 and ω2 in series between leads 1 and 7, with leads 2-6 acting as voltage sensing leads. (b) Conductance G from a lockin measurement at Tmore » = 2 K as a function of back-gate voltage Vbg during a forward Vbg sweep for both a ω1 = 10 nm channel (blue) and ω2 = 200 nm channel (red).« less
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Works referenced in this record:

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    Works referencing / citing this record:

    Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
    journal, July 2019

    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019

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      Figures / Tables found in this record:

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