Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures

Abstract

We report a gate-tunable dimensional crossover in sub-micrometer-scale channels created at the LaAlO3/SrTiO3 interface. Conducting channels of widths 10 nm and 200 nm are created using conducting atomic force microscope lithography. Under sufficient negative back-gate tuning, the orbital magnetoconductance of the 200 nm channel is strongly quenched, and residual signatures of low-field weak-antilocalization become strikingly similar to that of the 10 nm channel. The dimensional crossover for the 200 nm channel takes place near the conductance quantum G = 2e2/h. The ability to tune the dimensionality of narrow LaAlO3/SrTiO3 channels has implications for interpreting transport in a variety of gate-tunable oxide-heterostructure devices.

Authors:
 [1];  [2];  [3];  [3];  [1];  [1];  [1];  [3]; ORCiD logo [1]
+ Show Author Affiliations
  1. Univ. of Pittsburgh, PA (United States). Dept. of Physics and Astronomy; Pittsburgh Quantum Inst., PA (United States)
  2. Univ. of Pittsburgh, PA (United States). Dept. of Physics and Astronomy
  3. Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering
Publication Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States); Univ. of Pittsburgh, PA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Office of Naval Research (ONR) (United States)
OSTI Identifier:
1501550
Alternate Identifier(s):
OSTI ID: 1399634
Grant/Contract Number:  
FG02-06ER46327; N00014-15-1-2847; FG02-06ER26327
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 10; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; heterostructures; oxides; conductance quantum; transition metals; spin-orbit interactions; superconductivity; electromagnetism; ferroelasticity; electrostatics; thermodynamic states and processes

Citation Formats

Tomczyk, Michelle, Zhou, Rongpu, Lee, Hyungwoo, Lee, Jung-Woo, Cheng, Guanglei, Huang, Mengchen, Irvin, Patrick, Eom, Chang-Beom, and Levy, Jeremy. Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures. United States: N. p., 2017. Web. doi:10.1063/1.4999804.
Copy to clipboard
Tomczyk, Michelle, Zhou, Rongpu, Lee, Hyungwoo, Lee, Jung-Woo, Cheng, Guanglei, Huang, Mengchen, Irvin, Patrick, Eom, Chang-Beom, & Levy, Jeremy. Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures. United States. https://doi.org/10.1063/1.4999804
Copy to clipboard
Tomczyk, Michelle, Zhou, Rongpu, Lee, Hyungwoo, Lee, Jung-Woo, Cheng, Guanglei, Huang, Mengchen, Irvin, Patrick, Eom, Chang-Beom, and Levy, Jeremy. Mon . "Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures". United States. https://doi.org/10.1063/1.4999804. https://www.osti.gov/servlets/purl/1501550.
Copy to clipboard
@article{osti_1501550,
title = {Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures},
author = {Tomczyk, Michelle and Zhou, Rongpu and Lee, Hyungwoo and Lee, Jung-Woo and Cheng, Guanglei and Huang, Mengchen and Irvin, Patrick and Eom, Chang-Beom and Levy, Jeremy},
abstractNote = {We report a gate-tunable dimensional crossover in sub-micrometer-scale channels created at the LaAlO3/SrTiO3 interface. Conducting channels of widths 10 nm and 200 nm are created using conducting atomic force microscope lithography. Under sufficient negative back-gate tuning, the orbital magnetoconductance of the 200 nm channel is strongly quenched, and residual signatures of low-field weak-antilocalization become strikingly similar to that of the 10 nm channel. The dimensional crossover for the 200 nm channel takes place near the conductance quantum G = 2e2/h. The ability to tune the dimensionality of narrow LaAlO3/SrTiO3 channels has implications for interpreting transport in a variety of gate-tunable oxide-heterostructure devices.},
doi = {10.1063/1.4999804},
journal = {APL Materials},
number = 10,
volume = 5,
place = {United States},
year = {Mon Oct 16 00:00:00 EDT 2017},
month = {Mon Oct 16 00:00:00 EDT 2017}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4999804
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Figures / Tables:

FIG. 1. FIG. 1. : Device schematic and typical conductance behavior. (a) Schematic of a typical device consisting of two Hall bar structures of widths ω1 and ω2 in series between leads 1 and 7, with leads 2-6 acting as voltage sensing leads. (b) Conductance G from a lockin measurement at Tmore » = 2 K as a function of back-gate voltage Vbg during a forward Vbg sweep for both a ω1 = 10 nm channel (blue) and ω2 = 200 nm channel (red).« less
All figures and tables (4 total)
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Anomalous High Mobility in LaAlO 3 /SrTiO 3 Nanowires
journal, January 2013

  • Irvin, Patrick; Veazey, Joshua P.; Cheng, Guanglei
  • Nano Letters, Vol. 13, Issue 2
  • DOI: 10.1021/nl3033729

Local electrostatic imaging of striped domain order in LaAlO3/SrTiO3
journal, November 2013

  • Honig, M.; Sulpizio, J. A.; Drori, J.
  • Nature Materials, Vol. 12, Issue 12
  • DOI: 10.1038/nmat3810

Magnetic effects at the interface between non-magnetic oxides
journal, June 2007

  • Brinkman, A.; Huijben, M.; van Zalk, M.
  • Nature Materials, Vol. 6, Issue 7, p. 493-496
  • DOI: 10.1038/nmat1931

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO3/SrTiO3 heterointerfaces
journal, September 2013

  • Kalisky, Beena; Spanton, Eric M.; Noad, Hilary
  • Nature Materials, Vol. 12, Issue 12
  • DOI: 10.1038/nmat3753

Orbital magnetoconductance in the variable-range – hopping regime
journal, April 1988

Oxide Nanoelectronics on Demand
journal, February 2009

Micrometer-Scale Ballistic Transport of Electron Pairs in LaAlO 3 / SrTiO 3 Nanowires
journal, August 2016

Sketched oxide single-electron transistor
journal, April 2011

  • Cheng, Guanglei; Siles, Pablo F.; Bi, Feng
  • Nature Nanotechnology, Vol. 6, Issue 6
  • DOI: 10.1038/nnano.2011.56

Creation of a two-dimensional electron gas at an oxide interface on silicon
journal, October 2010

  • Park, J. W.; Bogorin, D. F.; Cen, C.
  • Nature Communications, Vol. 1, Issue 1
  • DOI: 10.1038/ncomms1096

Nanoscale Phenomena in Oxide Heterostructures
journal, July 2014

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain
journal, February 2011

  • Bark, C. W.; Felker, D. A.; Wang, Y.
  • Proceedings of the National Academy of Sciences, Vol. 108, Issue 12
  • DOI: 10.1073/pnas.1014849108

Microlithography of electron gases formed at interfaces in oxide heterostructures
journal, September 2006

  • Schneider, C. W.; Thiel, S.; Hammerl, G.
  • Applied Physics Letters, Vol. 89, Issue 12
  • DOI: 10.1063/1.2354422

“Water-cycle” mechanism for writing and erasing nanostructures at the LaAlO3/SrTiO3 interface
journal, October 2010

  • Bi, Feng; Bogorin, Daniela F.; Cen, Cheng
  • Applied Physics Letters, Vol. 97, Issue 17
  • DOI: 10.1063/1.3506509

Nanoscale control of an interfacial metal–insulator transition at room temperature
journal, March 2008

  • Cen, C.; Thiel, S.; Hammerl, G.
  • Nature Materials, Vol. 7, Issue 4
  • DOI: 10.1038/nmat2136

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
journal, January 2004

Giant conductivity switching of LaAlO3/SrTiO3 heterointerfaces governed by surface protonation
journal, February 2016

  • Brown, Keith A.; He, Shu; Eichelsdoerfer, Daniel J.
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms10681

Switchable Induced Polarization in LaAlO 3 /SrTiO 3 Heterostructures
journal, January 2012

  • Bark, C. W.; Sharma, P.; Wang, Y.
  • Nano Letters, Vol. 12, Issue 4
  • DOI: 10.1021/nl3001088

Superconducting Interfaces Between Insulating Oxides
journal, August 2007

Electron pairing without superconductivity
journal, May 2015

  • Cheng, Guanglei; Tomczyk, Michelle; Lu, Shicheng
  • Nature, Vol. 521, Issue 7551
  • DOI: 10.1038/nature14398

Direct imaging of LaAlO 3 /SrTiO 3 nanostructures using piezoresponse force microscopy
journal, November 2013

  • Huang, Mengchen; Bi, Feng; Ryu, Sangwoo
  • APL Materials, Vol. 1, Issue 5
  • DOI: 10.1063/1.4831855

Tailoring LaAlO 3 /SrTiO 3 Interface Metallicity by Oxygen Surface Adsorbates
journal, March 2016

In-plane electronic confinement in superconducting LaAlO3/SrTiO3 nanostructures
journal, November 2012

  • Stornaiuolo, D.; Gariglio, S.; Couto, N. J. G.
  • Applied Physics Letters, Vol. 101, Issue 22
  • DOI: 10.1063/1.4768936

Nanoscale Electrostatic Control of Oxide Interfaces
journal, March 2015

Quantum Electrical Transport in Mesoscopic LaAlO 3 /SrTiO 3 Heterostructures
journal, August 2013

  • Chang, Jung-Won; Song, Jonghyun; Lee, Joon Sung
  • Applied Physics Express, Vol. 6, Issue 8
  • DOI: 10.7567/apex.6.085201
    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
    journal, July 2019

    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019

      Sort by:
      [ × clear filter / sort ]

      Figures / Tables found in this record:

      FIG. 1. (p. 3)figure
      FIG. 2. (p. 4)figure
      FIG. 3. (p. 5)figure
      FIG. 4. (p. 6)figure
        [ × clear filter / sort ]
        Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

        Similar Records in DOE PAGES and OSTI.GOV collections: