Epitaxial integration and properties of SrRuO3 on silicon

Wang, Zhe; Nair, Hari P.; Correa, Gabriela C.; Jeong, Jaewoo; Lee, Kiyoung; Kim, Eun Sun; H., Ariel Seidner; Lee, Chang Seung; Lim, Han Jin; Muller, David A.; Schlom, Darrell G.

doi:10.1063/1.5041940

Title: Epitaxial integration and properties of SrRuO₃ on silicon

Journal Article · 02 August 2018 · APL Materials

DOI: https://doi.org/10.1063/1.5041940 · OSTI ID:1501523

Wang, Zhe ^[1]; Nair, Hari P. ^[2];

^[2]; Jeong, Jaewoo ^[3]; Lee, Kiyoung ^[4]; Kim, Eun Sun ^[5]; H., Ariel Seidner ^[2]; Lee, Chang Seung ^[4]; Lim, Han Jin ^[5]; Muller, David A. ^[6]; Schlom, Darrell G. ^[7]

Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Cornell Univ., Ithaca, NY (United States). Dept. of Materials Science and Engineering
Samsung Electronics, Milpitas, CA (United States). 3New Memory Technology Lab, Semiconductor R&D Center
Samsung Electronics, Yeongtong-gu, Suwon-si (South Korea). Samsung Advanced Inst. of Technology (SAIT), Platform Technology Lab.
Samsung Semiconductor R&D Center 1, Samsungjeonja-ro, Hwaseong-si (South Korea)
Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics; Kavli Inst. at Cornell for Nanoscale Science, Ithaca, NY (United States)
Cornell Univ., Ithaca, NY (United States). Dept. of Materials Science and Engineering; Kavli Inst. at Cornell for Nanoscale Science, Ithaca, NY (United States)

We report the integration of SrRuO₃, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO₃ buffer layer. The resulting SrRuO₃ film has a rocking curve full width at half maximum of 0.01°, a resistivity at room temperature of 250 μΩ cm, a residual resistivity ratio (ρ₃₀₀ K/ρ₄ K) of 11, and a paramagnetic-to-ferromagnetic transition temperature of ~160 K. These structural, electrical, and magnetic properties compare favorably to the best reported values for SrRuO₃ films on silicon and rival those of epitaxial SrRuO₃ films produced directly on SrTiO₃ single crystals by thin film growth techniques other than molecular-beam epitaxy. These high quality SrRuO₃ films with metallic conductivity on silicon are relevant to integrating multi-functional oxides with the workhorse of semiconductor technology, silicon.

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Research Organization:: Krell Institute, Inc., Ames, IA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-97ER25308

OSTI ID:: 1501523

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 8 Vol. 6; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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