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Title: Epitaxial integration and properties of SrRuO3 on silicon

Abstract

We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer. The resulting SrRuO3 film has a rocking curve full width at half maximum of 0.01°, a resistivity at room temperature of 250 μΩ cm, a residual resistivity ratio (ρ300 K/ρ4 K) of 11, and a paramagnetic-to-ferromagnetic transition temperature of ~160 K. These structural, electrical, and magnetic properties compare favorably to the best reported values for SrRuO3 films on silicon and rival those of epitaxial SrRuO3 films produced directly on SrTiO3 single crystals by thin film growth techniques other than molecular-beam epitaxy. These high quality SrRuO3 films with metallic conductivity on silicon are relevant to integrating multi-functional oxides with the workhorse of semiconductor technology, silicon.

Authors:
 [1];  [2]; ORCiD logo [2];  [3];  [4];  [5];  [2];  [4];  [5];  [6];  [7]
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  1. Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics
  2. Cornell Univ., Ithaca, NY (United States). Dept. of Materials Science and Engineering
  3. Samsung Electronics, Milpitas, CA (United States). 3New Memory Technology Lab, Semiconductor R&D Center
  4. Samsung Electronics, Yeongtong-gu, Suwon-si (South Korea). Samsung Advanced Inst. of Technology (SAIT), Platform Technology Lab.
  5. Samsung Semiconductor R&D Center 1, Samsungjeonja-ro, Hwaseong-si (South Korea)
  6. Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics; Kavli Inst. at Cornell for Nanoscale Science, Ithaca, NY (United States)
  7. Cornell Univ., Ithaca, NY (United States). Dept. of Materials Science and Engineering; Kavli Inst. at Cornell for Nanoscale Science, Ithaca, NY (United States)
Publication Date:
Research Org.:
Krell Institute, Inc., Ames, IA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1501523
Grant/Contract Number:  
FG02-97ER25308
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 6; Journal Issue: 8; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Zhe, Nair, Hari P., Correa, Gabriela C., Jeong, Jaewoo, Lee, Kiyoung, Kim, Eun Sun, H., Ariel Seidner, Lee, Chang Seung, Lim, Han Jin, Muller, David A., and Schlom, Darrell G. Epitaxial integration and properties of SrRuO3 on silicon. United States: N. p., 2018. Web. doi:10.1063/1.5041940.
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Wang, Zhe, Nair, Hari P., Correa, Gabriela C., Jeong, Jaewoo, Lee, Kiyoung, Kim, Eun Sun, H., Ariel Seidner, Lee, Chang Seung, Lim, Han Jin, Muller, David A., & Schlom, Darrell G. Epitaxial integration and properties of SrRuO3 on silicon. United States. https://doi.org/10.1063/1.5041940
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Wang, Zhe, Nair, Hari P., Correa, Gabriela C., Jeong, Jaewoo, Lee, Kiyoung, Kim, Eun Sun, H., Ariel Seidner, Lee, Chang Seung, Lim, Han Jin, Muller, David A., and Schlom, Darrell G. Thu . "Epitaxial integration and properties of SrRuO3 on silicon". United States. https://doi.org/10.1063/1.5041940. https://www.osti.gov/servlets/purl/1501523.
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@article{osti_1501523,
title = {Epitaxial integration and properties of SrRuO3 on silicon},
author = {Wang, Zhe and Nair, Hari P. and Correa, Gabriela C. and Jeong, Jaewoo and Lee, Kiyoung and Kim, Eun Sun and H., Ariel Seidner and Lee, Chang Seung and Lim, Han Jin and Muller, David A. and Schlom, Darrell G.},
abstractNote = {We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer. The resulting SrRuO3 film has a rocking curve full width at half maximum of 0.01°, a resistivity at room temperature of 250 μΩ cm, a residual resistivity ratio (ρ300 K/ρ4 K) of 11, and a paramagnetic-to-ferromagnetic transition temperature of ~160 K. These structural, electrical, and magnetic properties compare favorably to the best reported values for SrRuO3 films on silicon and rival those of epitaxial SrRuO3 films produced directly on SrTiO3 single crystals by thin film growth techniques other than molecular-beam epitaxy. These high quality SrRuO3 films with metallic conductivity on silicon are relevant to integrating multi-functional oxides with the workhorse of semiconductor technology, silicon.},
doi = {10.1063/1.5041940},
journal = {APL Materials},
number = 8,
volume = 6,
place = {United States},
year = {Thu Aug 02 00:00:00 EDT 2018},
month = {Thu Aug 02 00:00:00 EDT 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.5041940
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Cited by: 18 works
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Figures / Tables:

FIG. 1 FIG. 1: RHEED patterns of the as-grown 14 nm thick SrTiO3 film viewed along (a) the [100] azimuth and (b) the [110] azimuth of (001) SrTiO3 and RHEED patterns of the as-grown 14 nm thick SrRuO3 film viewed along (c) the [100]ₚ azimuth and (d) the [110]ₚ azimuth of (001)ₚmore » SrRuO3. (e) Surface morphology of the same sample by AFM.« less
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    • Chemistry – A European Journal, Vol. 25, Issue 33
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