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Title: Growth-Induced In-Plane Uniaxial Anisotropy in V2O3/Ni Films

Abstract

We report on a strain-induced and temperature dependent uniaxial anisotropy in V2O3/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the V2O3; atomic force and scanning electron microscopy reveal oriented rips in the film microstructure. Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial magnetic easy axis along the rips. Comparison with films grown on sapphire without rips shows a combined contribution from strain and microstructure in the V2O3/Ni films. Magnetization reversal characteristics captured by angular-dependent first order reversal curve measurements indicate a strong domain wall pinning along the direction orthogonal to the rips, inducing an angular-dependent change in the reversal mechanism. Lastly, the resultant anisotropy is tunable with temperature and is most pronounced at room temperature, which is beneficial for potential device applications.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3];  [4];  [4]; ORCiD logo [5];  [6]
  1. Univ. of California, Davis, CA (United States); NIST Center for Neutron Research, Gaithersburg, MD (United States)
  2. Univ. de los Andes, Bogota (Colombia)
  3. Institut Laue-Langevin, Grenoble cedex (France)
  4. Univ. of California, San Diego, CA (United States)
  5. Univ. of California, Davis, CA (United States)
  6. Colorado State Univ., Fort Collins, CO (United States)
Publication Date:
Research Org.:
Univ. of California, San Diego, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1500097
Grant/Contract Number:  
FG02-87ER45332
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gilbert, Dustin A., Ramírez, Juan Gabriel, Saerbeck, T., Trastoy, J., Schuller, Ivan K., Liu, Kai, and de la Venta, J. Growth-Induced In-Plane Uniaxial Anisotropy in V2O3/Ni Films. United States: N. p., 2017. Web. doi:10.1038/s41598-017-12690-z.
Gilbert, Dustin A., Ramírez, Juan Gabriel, Saerbeck, T., Trastoy, J., Schuller, Ivan K., Liu, Kai, & de la Venta, J. Growth-Induced In-Plane Uniaxial Anisotropy in V2O3/Ni Films. United States. https://doi.org/10.1038/s41598-017-12690-z
Gilbert, Dustin A., Ramírez, Juan Gabriel, Saerbeck, T., Trastoy, J., Schuller, Ivan K., Liu, Kai, and de la Venta, J. Wed . "Growth-Induced In-Plane Uniaxial Anisotropy in V2O3/Ni Films". United States. https://doi.org/10.1038/s41598-017-12690-z. https://www.osti.gov/servlets/purl/1500097.
@article{osti_1500097,
title = {Growth-Induced In-Plane Uniaxial Anisotropy in V2O3/Ni Films},
author = {Gilbert, Dustin A. and Ramírez, Juan Gabriel and Saerbeck, T. and Trastoy, J. and Schuller, Ivan K. and Liu, Kai and de la Venta, J.},
abstractNote = {We report on a strain-induced and temperature dependent uniaxial anisotropy in V2O3/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the V2O3; atomic force and scanning electron microscopy reveal oriented rips in the film microstructure. Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial magnetic easy axis along the rips. Comparison with films grown on sapphire without rips shows a combined contribution from strain and microstructure in the V2O3/Ni films. Magnetization reversal characteristics captured by angular-dependent first order reversal curve measurements indicate a strong domain wall pinning along the direction orthogonal to the rips, inducing an angular-dependent change in the reversal mechanism. Lastly, the resultant anisotropy is tunable with temperature and is most pronounced at room temperature, which is beneficial for potential device applications.},
doi = {10.1038/s41598-017-12690-z},
journal = {Scientific Reports},
number = 1,
volume = 7,
place = {United States},
year = {2017},
month = {10}
}

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Cited by: 14 works
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Figures / Tables:

Figure 1 Figure 1: (a) High-angle θ-2θ x-ray diffraction pattern of V2O3 (100 nm)/Ni (10 nm) sample, misaligned by 0.1° to suppress the substrate peaks. The V2O3 (012), (024), and (036) peaks are identified by *, the Ni (111) identified by , and sapphire (012) and (024) identified by . (b) Reciprocalmore » space map of V2O3 recorded along the long edge of the substrate. The (012) plane is parallel to the surface at Q|| = 0, while the (104) points 48° to the surface normal. (c) Pole figure of the (104) plane showing the epitaxy of V2O3. The (014) lies at 82° with respect to the surface normal. (d) Schematic reconstruction of the real space orientation of the V2O3 crystal planes following from symmetry considerations of the measured planes.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.