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Title: B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system

Abstract

We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid helium temperatures. The Hall resistance oscillations and plateaus appear together with concomitant oscillations also in the diagonal magnetoresistance. The periods of Hall and diagonal resistance oscillations are nearly identical, and source power (P) dependent measurements demonstrate sub-linear relationship of the oscillation amplitude with P over the span 0 < P ≤ 20 mW.

Authors:
 [1];  [2];  [2];  [1]
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  1. Georgia State Univ, Atlanta, GA (United States)
  2. ETH Zurich (Switzerland)
Publication Date:
Research Org.:
Georgia State Univ, Atlanta, GA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1500046
Grant/Contract Number:  
SC0001762
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS

Citation Formats

Liu, Han-Chun, Reichl, C., Wegscheider, W., and Mani, R. G. B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system. United States: N. p., 2018. Web. doi:10.1038/s41598-018-26009-z.
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Liu, Han-Chun, Reichl, C., Wegscheider, W., & Mani, R. G. B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system. United States. doi:10.1038/s41598-018-26009-z.
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Liu, Han-Chun, Reichl, C., Wegscheider, W., and Mani, R. G. Fri . "B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system". United States. doi:10.1038/s41598-018-26009-z. https://www.osti.gov/servlets/purl/1500046.
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@article{osti_1500046,
title = {B-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system},
author = {Liu, Han-Chun and Reichl, C. and Wegscheider, W. and Mani, R. G.},
abstractNote = {We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid helium temperatures. The Hall resistance oscillations and plateaus appear together with concomitant oscillations also in the diagonal magnetoresistance. The periods of Hall and diagonal resistance oscillations are nearly identical, and source power (P) dependent measurements demonstrate sub-linear relationship of the oscillation amplitude with P over the span 0 < P ≤ 20 mW.},
doi = {10.1038/s41598-018-26009-z},
journal = {Scientific Reports},
number = 1,
volume = 8,
place = {United States},
year = {2018},
month = {5}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI:  10.1038/s41598-018-26009-z
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Cited by: 3 works
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Figures / Tables:

Figure 1 Figure 1: The inset shows a schematic of the sample and the measurement configuration. (a) The Hall resistance, Rxy, and diagonal resistance, Rxx, measured under both dark- and photo-excited (ƒ = 58 GHz) conditions with Idc = 0 μA. The dark Rxy has been offset with respect to the photo-excitedmore » curve for the sake of clarity. The characteristic field of cyclotron resonance, labeled as Bf, is indicated by the dashed vertical line. (b) This panel shows the difference between the photo-excited and dark resistances shown in Fig. 1(a), i.e., ΔRxy = R$(photo− excited)\atop{xy}$ R$(dark)\atop{xy}$, and ΔRxx = R$(photo− excited)\atop{xx}$ – R$(dark)\atop{xx}$. (c) The Hall resistance, Rxy, and diagonal resistance, Rxx, measured under both dark- and photo-excited (ƒ = 58 GHz) conditions with a supplemental Idc = 30 μA. Upon applying Idc = 30 μA, the photo-excited Rxy starts exhibiting B-periodic oscillations at high B. Concurrently, B-periodic oscillations appear on the SdH oscillations in Rxx. (d) ΔRxy (left ordinate) and ΔRxx (right ordinate) obtained from the data of Fig. 1(c) are plotted vs. B. The results suggest anti-phase B-perioidic oscillations in ΔRxy and ΔRxx.« less
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