Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts
Abstract
The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS2 is presented, which is a less explored system compared to direct band gap monolayer MoS2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS2 membranes. The photoresponsivity R was measured to be ~1.4 × 104 A/W, which is > 104 times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 1011 Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~104. From time-resolved photocurrent measurements, a decay time τ d ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.
- Authors:
-
- Univ. of North Texas, Denton, TX (United States). Dept. of Materials Science and Engineering. PACCAR Technology Inst. Dept. of Electrical Engineering; Univ. of Texas, El Paso, TX (United States). Dept. of Electrical and Computer Engineering
- Drexel Univ., Philadelphia, PA (United States). Dept. of Physics
- Publication Date:
- Research Org.:
- Univ. of North Texas, Denton, TX (United States); Drexel Univ., Philadelphia, PA (United States); Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR)
- OSTI Identifier:
- 1499995
- Grant/Contract Number:
- SC0012575; FA9550-15-1-0200
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 8; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; electrical and electronic engineering; sensors; two-dimensional materials
Citation Formats
Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, and Kaul, Anupama B. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts. United States: N. p., 2018.
Web. doi:10.1038/s41598-018-19367-1.
Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, & Kaul, Anupama B. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts. United States. https://doi.org/10.1038/s41598-018-19367-1
Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, and Kaul, Anupama B. Fri .
"Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts". United States. https://doi.org/10.1038/s41598-018-19367-1. https://www.osti.gov/servlets/purl/1499995.
@article{osti_1499995,
title = {Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts},
author = {Saenz, Gustavo A. and Karapetrov, Goran and Curtis, James and Kaul, Anupama B.},
abstractNote = {The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS2 is presented, which is a less explored system compared to direct band gap monolayer MoS2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS2 membranes. The photoresponsivity R was measured to be ~1.4 × 104 A/W, which is > 104 times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 1011 Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~104. From time-resolved photocurrent measurements, a decay time τ d ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.},
doi = {10.1038/s41598-018-19367-1},
journal = {Scientific Reports},
number = ,
volume = 8,
place = {United States},
year = {Fri Jan 19 00:00:00 EST 2018},
month = {Fri Jan 19 00:00:00 EST 2018}
}
Web of Science
Figures / Tables:
Works referenced in this record:
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
journal, January 2014
- Zhang, Wenjing; Chuu, Chih-Piao; Huang, Jing-Kai
- Scientific Reports, Vol. 4, Issue 1
Wearable and Highly Sensitive Graphene Strain Sensors for Human Motion Monitoring
journal, April 2014
- Wang, Yan; Wang, Li; Yang, Tingting
- Advanced Functional Materials, Vol. 24, Issue 29
High-Gain Phototransistors Based on a CVD MoS 2 Monolayer
journal, May 2013
- Zhang, Wenjing; Huang, Jing-Kai; Chen, Chang-Hsiao
- Advanced Materials, Vol. 25, Issue 25
Photoresponse of Natural van der Waals Heterostructures
journal, May 2017
- Ray, Kyle; Yore, Alexander E.; Mou, Tong
- ACS Nano, Vol. 11, Issue 6
Multilayer MoS 2 transistors enabled by a facile dry-transfer technique and thermal annealing
journal, November 2014
- Yang, Rui; Zheng, Xuqian; Wang, Zenghui
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 6
Photoconductivity of solution-processed MoS2 films
journal, January 2013
- Cunningham, Graeme; Khan, Umar; Backes, Claudia
- Journal of Materials Chemistry C, Vol. 1, Issue 41
Enhancement of Photovoltaic Response in Multilayer MoS 2 Induced by Plasma Doping
journal, April 2014
- Wi, Sungjin; Kim, Hyunsoo; Chen, Mikai
- ACS Nano, Vol. 8, Issue 5
Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors
journal, June 2015
- Wu, Yueh-Chun; Liu, Cheng-Hua; Chen, Shao-Yu
- Scientific Reports, Vol. 5, Issue 1
High Responsivity, Large-Area Graphene/MoS 2 Flexible Photodetectors
journal, September 2016
- De Fazio, Domenico; Goykhman, Ilya; Yoon, Duhee
- ACS Nano, Vol. 10, Issue 9
Photoluminescence of freestanding single- and few-layer
journal, March 2014
- Scheuschner, Nils; Ochedowski, Oliver; Kaulitz, Anne-Marie
- Physical Review B, Vol. 89, Issue 12
High mobility ambipolar MoS 2 field-effect transistors: Substrate and dielectric effects
journal, January 2013
- Bao, Wenzhong; Cai, Xinghan; Kim, Dohun
- Applied Physics Letters, Vol. 102, Issue 4
Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films
journal, July 2015
- Ghosh, Sujoy; Winchester, Andrew; Muchharla, Baleeswaraiah
- Scientific Reports, Vol. 5, Issue 1
Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
journal, May 2013
- Britnell, L.; Ribeiro, R. M.; Eckmann, A.
- Science, Vol. 340, Issue 6138
Two-Dimensional Crystals: Managing Light for Optoelectronics
journal, June 2013
- Eda, Goki; Maier, Stefan A.
- ACS Nano, Vol. 7, Issue 7
Photocurrent generation with two-dimensional van der Waals semiconductors
journal, January 2015
- Buscema, Michele; Island, Joshua O.; Groenendijk, Dirk J.
- Chemical Society Reviews, Vol. 44, Issue 11
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
journal, October 2013
- Roy, Kallol; Padmanabhan, Medini; Goswami, Srijit
- Nature Nanotechnology, Vol. 8, Issue 11
Control of Schottky Barriers in Single Layer MoS 2 Transistors with Ferromagnetic Contacts
journal, June 2013
- Chen, Jen-Ru; Odenthal, Patrick M.; Swartz, Adrian G.
- Nano Letters, Vol. 13, Issue 7
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2
journal, June 2014
- Yim, Chanyoung; O'Brien, Maria; McEvoy, Niall
- Scientific Reports, Vol. 4, Issue 1
Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS 2
journal, May 2013
- He, Keliang; Poole, Charles; Mak, Kin Fai
- Nano Letters, Vol. 13, Issue 6
Two-dimensional layered materials: Structure, properties, and prospects for device applications
journal, February 2014
- Kaul, Anupama B.
- Journal of Materials Research, Vol. 29, Issue 3
Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer
journal, February 2016
- Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew
- Scientific Reports, Vol. 6, Issue 1
On the chemically-assisted excitonic enhancement in environmentally-friendly solution dispersions of two-dimensional MoS 2 and WS 2
journal, January 2017
- Fadil, Dalal; Hossain, Ridwan F.; Saenz, Gustavo A.
- Journal of Materials Chemistry C, Vol. 5, Issue 22
Hybrid 2D-0D MoS 2 -PbS Quantum Dot Photodetectors
journal, November 2014
- Kufer, Dominik; Nikitskiy, Ivan; Lasanta, Tania
- Advanced Materials, Vol. 27, Issue 1
Schottky barrier heights for Au and Pd contacts to MoS2
journal, September 2014
- Kaushik, Naveen; Nipane, Ankur; Basheer, Firdous
- Applied Physics Letters, Vol. 105, Issue 11
Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013
- Radisavljevic, Branimir; Kis, Andras
- Nature Materials, Vol. 12, Issue 9
Phototransistors: High-Detectivity Multilayer MoS 2 Phototransistors with Spectral Response from Ultraviolet to Infrared (Adv. Mater. 43/2012)
journal, November 2012
- Choi, Woong; Cho, Mi Yeon; Konar, Aniruddha
- Advanced Materials, Vol. 24, Issue 43
Atomically Thin A New Direct-Gap Semiconductor
journal, September 2010
- Mak, Kin Fai; Lee, Changgu; Hone, James
- Physical Review Letters, Vol. 105, Issue 13, Article No.136805
A roadmap for graphene
journal, October 2012
- Novoselov, K. S.; Fal′ko, V. I.; Colombo, L.
- Nature, Vol. 490, Issue 7419
Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
journal, April 2014
- Castellanos-Gomez, Andres; Buscema, Michele; Molenaar, Rianda
- 2D Materials, Vol. 1, Issue 1
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
journal, March 2014
- Liu, Han; Neal, Adam T.; Zhu, Zhen
- ACS Nano, Vol. 8, Issue 4
Photothermoelectric and photovoltaic effects both present in MoS2
journal, January 2015
- Zhang, Youwei; Li, Hui; Wang, Lu
- Scientific Reports, Vol. 5, Issue 1
Enhancing the photocurrent and photoluminescence of single crystal monolayer MoS 2 with resonant plasmonic nanoshells
journal, January 2014
- Sobhani, Ali; Lauchner, Adam; Najmaei, Sina
- Applied Physics Letters, Vol. 104, Issue 3
Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013
- Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin
- Nature Nanotechnology, Vol. 8, Issue 7
Controllable Schottky Barriers between MoS2 and Permalloy
journal, November 2014
- Wang, Weiyi; Liu, Yanwen; Tang, Lei
- Scientific Reports, Vol. 4, Issue 1
Electronic properties of cleaved molybdenum disulphide surfaces
journal, December 1974
- McGovern, I. T.; Williams, R. H.; Mee, C. H. B.
- Surface Science, Vol. 46, Issue 2
Mechanisms of Photoconductivity in Atomically Thin MoS 2
journal, October 2014
- Furchi, Marco M.; Polyushkin, Dmitry K.; Pospischil, Andreas
- Nano Letters, Vol. 14, Issue 11
A thermally-invariant, additively manufactured, high-power graphene resistor for flexible electronics
journal, April 2017
- Michel, Monica; Biswas, Chandan; Tiwary, Chandra S.
- 2D Materials, Vol. 4, Issue 2
Highly responsive MoS2 photodetectors enhanced by graphene quantum dots
journal, July 2015
- Chen, Caiyun; Qiao, Hong; Lin, Shenghuang
- Scientific Reports, Vol. 5, Issue 1
Single-layer MoS2 transistors
journal, January 2011
- Radisavljevic, B.; Radenovic, A.; Brivio, J.
- Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
Tunable band gaps in bilayer transition-metal dichalcogenides
journal, November 2011
- Ramasubramaniam, Ashwin; Naveh, Doron; Towe, Elias
- Physical Review B, Vol. 84, Issue 20
High Performance Multilayer MoS2Transistors with Scandium Contacts
journal, December 2012
- Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
- Nano Letters, Vol. 13, Issue 1, p. 100-105
Improved photoresponse with enhanced photoelectric contribution in fully suspended graphene photodetectors
journal, September 2013
- Patil, Vikram; Capone, Aaron; Strauf, Stefan
- Scientific Reports, Vol. 3, Issue 1
Highly Sensitive, Encapsulated MoS 2 Photodetector with Gate Controllable Gain and Speed
journal, October 2015
- Kufer, Dominik; Konstantatos, Gerasimos
- Nano Letters, Vol. 15, Issue 11
MoS 2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
journal, June 2012
- Lee, Hee Sung; Min, Sung-Wook; Chang, Youn-Gyung
- Nano Letters, Vol. 12, Issue 7
Biocompatible, large-format, inkjet printed heterostructure MoS2-graphene photodetectors on conformable substrates
journal, September 2017
- Hossain, Ridwan F.; Deaguero, Isaac G.; Boland, Thomas
- npj 2D Materials and Applications, Vol. 1, Issue 1
The physics and chemistry of the Schottky barrier height
journal, January 2014
- Tung, Raymond T.
- Applied Physics Reviews, Vol. 1, Issue 1
Works referencing / citing this record:
Exfoliated CrPS 4 with Promising Photoconductivity
journal, December 2019
- Budniak, Adam K.; Killilea, Niall A.; Zelewski, Szymon J.
- Small, Vol. 16, Issue 1
Sc 3 N@C 80 and La@C 82 doped graphene for a new class of optoelectronic devices
journal, January 2020
- Jayanand, Kishan; Chugh, Srishti; Adhikari, Nirmal
- Journal of Materials Chemistry C, Vol. 8, Issue 12
High mobility ReSe 2 field effect transistors: Schottky-barrier-height-dependent photoresponsivity and broadband light detection with Co decoration
journal, November 2019
- Khan, Muhammad Farooq; Rehman, Shania; Akhtar, Imtisal
- 2D Materials, Vol. 7, Issue 1
Figures / Tables found in this record: