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Title: Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

Abstract

The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS2 is presented, which is a less explored system compared to direct band gap monolayer MoS2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS2 membranes. The photoresponsivity R was measured to be ~1.4 × 104 A/W, which is > 104 times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 1011 Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~104. From time-resolved photocurrent measurements, a decay time τ d ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.

Authors:
 [1];  [2];  [2];  [1]
+ Show Author Affiliations
  1. Univ. of North Texas, Denton, TX (United States). Dept. of Materials Science and Engineering. PACCAR Technology Inst. Dept. of Electrical Engineering; Univ. of Texas, El Paso, TX (United States). Dept. of Electrical and Computer Engineering
  2. Drexel Univ., Philadelphia, PA (United States). Dept. of Physics
Publication Date:
Research Org.:
Univ. of North Texas, Denton, TX (United States); Drexel Univ., Philadelphia, PA (United States); Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1499995
Grant/Contract Number:  
SC0012575; FA9550-15-1-0200
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electrical and electronic engineering; sensors; two-dimensional materials

Citation Formats

Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, and Kaul, Anupama B. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts. United States: N. p., 2018. Web. doi:10.1038/s41598-018-19367-1.
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Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, & Kaul, Anupama B. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts. United States. https://doi.org/10.1038/s41598-018-19367-1
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Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, and Kaul, Anupama B. Fri . "Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts". United States. https://doi.org/10.1038/s41598-018-19367-1. https://www.osti.gov/servlets/purl/1499995.
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@article{osti_1499995,
title = {Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts},
author = {Saenz, Gustavo A. and Karapetrov, Goran and Curtis, James and Kaul, Anupama B.},
abstractNote = {The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS2 is presented, which is a less explored system compared to direct band gap monolayer MoS2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS2 membranes. The photoresponsivity R was measured to be ~1.4 × 104 A/W, which is > 104 times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 1011 Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~104. From time-resolved photocurrent measurements, a decay time τ d ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.},
doi = {10.1038/s41598-018-19367-1},
journal = {Scientific Reports},
number = ,
volume = 8,
place = {United States},
year = {Fri Jan 19 00:00:00 EST 2018},
month = {Fri Jan 19 00:00:00 EST 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1038/s41598-018-19367-1
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Cited by: 36 works
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Figures / Tables:

Figure 1 Figure 1: Schematic of the suspended ML MoS2 PD used in this work. (a) Two-terminal configuration of our device fabricated with 100 nm Mo bottom contacts formed on thermally oxidized (thickness of SiO2 ~ 270 nm) Si substrates. For three-terminal measurements that are reported later in the “Three-terminal Gating Measurements”more » Section, the substrate acts as the gate, where the gate voltage is shown as VG. (b) Top: The photocurrent generation mechanism is attributed to the excitation of e-h pairs from the valence band maximum at the K-point in the Brillouin zone, to the gamma Γ-point in the conduction band minimum which is offset in k-space relative to the K-point. Bottom: Energy band diagram of the PD under an applied source-drain bias voltage, where Iph = IDS − Idark. As temperature T increases, according to the thermionic emission model, the thermionic emission current ITE increases since the carriers have more energy to overcome the Schottky barrier φSB at the interface. (c) Raman spectra showing the bulk MoS2 strong vibrational peaks $E_{2g}^1$ and A1g at 383.7 cm-1 and 408.8 cm−1, respectively. The inset shows the optical image of the MSM MoS2 PD. (d) PL of the suspended area compared to the supported regions, where a shift to the left of ~40 meV is observed in the A1 peak attributed to direct hot-luminescence effects« less
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Works referenced in this record:

Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
journal, January 2014

  • Zhang, Wenjing; Chuu, Chih-Piao; Huang, Jing-Kai
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep03826

Wearable and Highly Sensitive Graphene Strain Sensors for Human Motion Monitoring
journal, April 2014

  • Wang, Yan; Wang, Li; Yang, Tingting
  • Advanced Functional Materials, Vol. 24, Issue 29
  • DOI: 10.1002/adfm.201400379

High-Gain Phototransistors Based on a CVD MoS 2 Monolayer
journal, May 2013

  • Zhang, Wenjing; Huang, Jing-Kai; Chen, Chang-Hsiao
  • Advanced Materials, Vol. 25, Issue 25
  • DOI: 10.1002/adma.201301244

Photoresponse of Natural van der Waals Heterostructures
journal, May 2017

Multilayer MoS 2 transistors enabled by a facile dry-transfer technique and thermal annealing
journal, November 2014

  • Yang, Rui; Zheng, Xuqian; Wang, Zenghui
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 6
  • DOI: 10.1116/1.4898117

Photoconductivity of solution-processed MoS2 films
journal, January 2013

  • Cunningham, Graeme; Khan, Umar; Backes, Claudia
  • Journal of Materials Chemistry C, Vol. 1, Issue 41
  • DOI: 10.1039/c3tc31402b

Enhancement of Photovoltaic Response in Multilayer MoS 2 Induced by Plasma Doping
journal, April 2014

  • Wi, Sungjin; Kim, Hyunsoo; Chen, Mikai
  • ACS Nano, Vol. 8, Issue 5
  • DOI: 10.1021/nn5013429

Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors
journal, June 2015

  • Wu, Yueh-Chun; Liu, Cheng-Hua; Chen, Shao-Yu
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep11472

High Responsivity, Large-Area Graphene/MoS 2 Flexible Photodetectors
journal, September 2016

Photoluminescence of freestanding single- and few-layer MoS 2
journal, March 2014

High mobility ambipolar MoS 2 field-effect transistors: Substrate and dielectric effects
journal, January 2013

  • Bao, Wenzhong; Cai, Xinghan; Kim, Dohun
  • Applied Physics Letters, Vol. 102, Issue 4
  • DOI: 10.1063/1.4789365

Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films
journal, July 2015

  • Ghosh, Sujoy; Winchester, Andrew; Muchharla, Baleeswaraiah
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep11272

Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
journal, May 2013

Two-Dimensional Crystals: Managing Light for Optoelectronics
journal, June 2013

Photocurrent generation with two-dimensional van der Waals semiconductors
journal, January 2015

  • Buscema, Michele; Island, Joshua O.; Groenendijk, Dirk J.
  • Chemical Society Reviews, Vol. 44, Issue 11
  • DOI: 10.1039/C5CS00106D

Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
journal, October 2013

  • Roy, Kallol; Padmanabhan, Medini; Goswami, Srijit
  • Nature Nanotechnology, Vol. 8, Issue 11
  • DOI: 10.1038/nnano.2013.206

Control of Schottky Barriers in Single Layer MoS 2 Transistors with Ferromagnetic Contacts
journal, June 2013

  • Chen, Jen-Ru; Odenthal, Patrick M.; Swartz, Adrian G.
  • Nano Letters, Vol. 13, Issue 7
  • DOI: 10.1021/nl4010157

Heterojunction Hybrid Devices from Vapor Phase Grown MoS2
journal, June 2014

  • Yim, Chanyoung; O'Brien, Maria; McEvoy, Niall
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep05458

Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS 2
journal, May 2013

  • He, Keliang; Poole, Charles; Mak, Kin Fai
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl4013166

Two-dimensional layered materials: Structure, properties, and prospects for device applications
journal, February 2014

  • Kaul, Anupama B.
  • Journal of Materials Research, Vol. 29, Issue 3
  • DOI: 10.1557/jmr.2014.6

Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer
journal, February 2016

  • Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep20890

On the chemically-assisted excitonic enhancement in environmentally-friendly solution dispersions of two-dimensional MoS 2 and WS 2
journal, January 2017

  • Fadil, Dalal; Hossain, Ridwan F.; Saenz, Gustavo A.
  • Journal of Materials Chemistry C, Vol. 5, Issue 22
  • DOI: 10.1039/C7TC01001J

Hybrid 2D-0D MoS 2 -PbS Quantum Dot Photodetectors
journal, November 2014

  • Kufer, Dominik; Nikitskiy, Ivan; Lasanta, Tania
  • Advanced Materials, Vol. 27, Issue 1
  • DOI: 10.1002/adma.201402471

Schottky barrier heights for Au and Pd contacts to MoS2
journal, September 2014

  • Kaushik, Naveen; Nipane, Ankur; Basheer, Firdous
  • Applied Physics Letters, Vol. 105, Issue 11
  • DOI: 10.1063/1.4895767

Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013

  • Radisavljevic, Branimir; Kis, Andras
  • Nature Materials, Vol. 12, Issue 9
  • DOI: 10.1038/nmat3687

Phototransistors: High-Detectivity Multilayer MoS 2 Phototransistors with Spectral Response from Ultraviolet to Infrared (Adv. Mater. 43/2012)
journal, November 2012

  • Choi, Woong; Cho, Mi Yeon; Konar, Aniruddha
  • Advanced Materials, Vol. 24, Issue 43
  • DOI: 10.1002/adma.201290270

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

A roadmap for graphene
journal, October 2012

  • Novoselov, K. S.; Fal′ko, V. I.; Colombo, L.
  • Nature, Vol. 490, Issue 7419
  • DOI: 10.1038/nature11458

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
journal, April 2014

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
journal, March 2014

  • Liu, Han; Neal, Adam T.; Zhu, Zhen
  • ACS Nano, Vol. 8, Issue 4
  • DOI: 10.1021/nn501226z

Photothermoelectric and photovoltaic effects both present in MoS2
journal, January 2015

  • Zhang, Youwei; Li, Hui; Wang, Lu
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep07938

Enhancing the photocurrent and photoluminescence of single crystal monolayer MoS 2 with resonant plasmonic nanoshells
journal, January 2014

  • Sobhani, Ali; Lauchner, Adam; Najmaei, Sina
  • Applied Physics Letters, Vol. 104, Issue 3
  • DOI: 10.1063/1.4862745

Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013

  • Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin
  • Nature Nanotechnology, Vol. 8, Issue 7
  • DOI: 10.1038/nnano.2013.100

Controllable Schottky Barriers between MoS2 and Permalloy
journal, November 2014

  • Wang, Weiyi; Liu, Yanwen; Tang, Lei
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep06928

Electronic properties of cleaved molybdenum disulphide surfaces
journal, December 1974

Mechanisms of Photoconductivity in Atomically Thin MoS 2
journal, October 2014

  • Furchi, Marco M.; Polyushkin, Dmitry K.; Pospischil, Andreas
  • Nano Letters, Vol. 14, Issue 11
  • DOI: 10.1021/nl502339q

A thermally-invariant, additively manufactured, high-power graphene resistor for flexible electronics
journal, April 2017

Highly responsive MoS2 photodetectors enhanced by graphene quantum dots
journal, July 2015

  • Chen, Caiyun; Qiao, Hong; Lin, Shenghuang
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep11830

Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Tunable band gaps in bilayer transition-metal dichalcogenides
journal, November 2011

High Performance Multilayer MoS2Transistors with Scandium Contacts
journal, December 2012

  • Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
  • Nano Letters, Vol. 13, Issue 1, p. 100-105
  • DOI: 10.1021/nl303583v

Improved photoresponse with enhanced photoelectric contribution in fully suspended graphene photodetectors
journal, September 2013

  • Patil, Vikram; Capone, Aaron; Strauf, Stefan
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02791

Highly Sensitive, Encapsulated MoS 2 Photodetector with Gate Controllable Gain and Speed
journal, October 2015

MoS 2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
journal, June 2012

  • Lee, Hee Sung; Min, Sung-Wook; Chang, Youn-Gyung
  • Nano Letters, Vol. 12, Issue 7
  • DOI: 10.1021/nl301485q

Biocompatible, large-format, inkjet printed heterostructure MoS2-graphene photodetectors on conformable substrates
journal, September 2017

  • Hossain, Ridwan F.; Deaguero, Isaac G.; Boland, Thomas
  • npj 2D Materials and Applications, Vol. 1, Issue 1
  • DOI: 10.1038/s41699-017-0034-2

The physics and chemistry of the Schottky barrier height
journal, January 2014

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