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Title: Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS 2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

Abstract

The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS 2 is presented, which is a less explored system compared to direct band gap monolayer MoS 2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS 2 membranes. The photoresponsivity R was measured to be ~1.4 × 10 4 A/W, which is > 10 4 times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 10 11 Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~10 4. From time-resolved photocurrent measurements, a decay time τ d ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.

Authors:
 [1];  [2];  [2];  [1]
  1. Univ. of North Texas, Denton, TX (United States). Dept. of Materials Science and Engineering. PACCAR Technology Inst. Dept. of Electrical Engineering; Univ. of Texas, El Paso, TX (United States). Dept. of Electrical and Computer Engineering
  2. Drexel Univ., Philadelphia, PA (United States). Dept. of Physics
Publication Date:
Research Org.:
Univ. of North Texas, Denton, TX (United States); Drexel Univ., Philadelphia, PA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1499995
Grant/Contract Number:  
SC0012575; FA9550-15-1-0200
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electrical and electronic engineering; sensors; two-dimensional materials

Citation Formats

Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, and Kaul, Anupama B. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts. United States: N. p., 2018. Web. doi:10.1038/s41598-018-19367-1.
Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, & Kaul, Anupama B. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts. United States. doi:10.1038/s41598-018-19367-1.
Saenz, Gustavo A., Karapetrov, Goran, Curtis, James, and Kaul, Anupama B. Fri . "Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts". United States. doi:10.1038/s41598-018-19367-1. https://www.osti.gov/servlets/purl/1499995.
@article{osti_1499995,
title = {Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts},
author = {Saenz, Gustavo A. and Karapetrov, Goran and Curtis, James and Kaul, Anupama B.},
abstractNote = {The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS2 is presented, which is a less explored system compared to direct band gap monolayer MoS2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS2 membranes. The photoresponsivity R was measured to be ~1.4 × 104 A/W, which is > 104 times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 1011 Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~104. From time-resolved photocurrent measurements, a decay time τ d ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.},
doi = {10.1038/s41598-018-19367-1},
journal = {Scientific Reports},
number = ,
volume = 8,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

Figure 1 Figure 1: Schematic of the suspended ML MoS2 PD used in this work. (a) Two-terminal configuration of our device fabricated with 100 nm Mo bottom contacts formed on thermally oxidized (thickness of SiO2 ~ 270 nm) Si substrates. For three-terminal measurements that are reported later in the “Three-terminal Gating Measurements”more » Section, the substrate acts as the gate, where the gate voltage is shown as VG. (b) Top: The photocurrent generation mechanism is attributed to the excitation of e-h pairs from the valence band maximum at the K-point in the Brillouin zone, to the gamma Γ-point in the conduction band minimum which is offset in k-space relative to the K-point. Bottom: Energy band diagram of the PD under an applied source-drain bias voltage, where Iph = IDSIdark. As temperature T increases, according to the thermionic emission model, the thermionic emission current ITE increases since the carriers have more energy to overcome the Schottky barrier φSB at the interface. (c) Raman spectra showing the bulk MoS2 strong vibrational peaks $E_{2g}^1$ and A1g at 383.7 cm-1 and 408.8 cm−1, respectively. The inset shows the optical image of the MSM MoS2 PD. (d) PL of the suspended area compared to the supported regions, where a shift to the left of ~40 meV is observed in the A1 peak attributed to direct hot-luminescence effects« less

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.