Experimental realization of two-dimensional Dirac nodal line fermions in monolayer Cu2Si
- Univ. of Tokyo,Tokyo (Japan); Hiroshima Univ., Hiroshima (Japan)
- Beijing Inst. of Technology, Beijing (China)
- Univ. of Tokyo,Tokyo (Japan)
- Chinese Academy of Sciences (CAS), Beijing (China)
- Hiroshima Univ., Hiroshima (Japan); Chinese Academy of Sciences (CAS), Beijing (China)
- Hiroshima Univ., Hiroshima (Japan)
- Istituto di Struttura della Materia (ISM), Trieste (Italy)
- Univ. of Illinois, Chicago, IL (United States)
Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, ZrSiS, TlTaSe2 and PbTaSe2. However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu2Si form two concentric loops centred around the Γ point and are protected by mirror reflection symmetry. In conclusion, our results establish Cu2Si as a platform to study the novel physical properties in two-dimensional Dirac materials and provide opportunities to realize high-speed low-dissipation devices.
- Research Organization:
- Univ. of Illinois, Chicago, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- Grant/Contract Number:
- FG02-07ER46383
- OSTI ID:
- 1499693
- Journal Information:
- Nature Communications, Vol. 8, Issue 1; ISSN 2041-1723
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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