Indirect excitons in van der Waals heterostructures at room temperature

Calman, E. V.; Fogler, M. M.; Butov, L. V.; Hu, S.; Mishchenko, A.; Geim, A. K.

doi:10.1038/s41467-018-04293-7

Title: Indirect excitons in van der Waals heterostructures at room temperature

Abstract

Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs were extensively studied in III–V and II–VI semiconductor heterostructures where IX range of existence has been limited to low temperatures. Here, we present the observation of IXs at room temperature in van der Waals transition metal dichalcogenide (TMD) heterostructures. Here, this is achieved in TMD heterostructures based on monolayers of MoS2 separated by atomically thin hexagonal boron nitride. The IXs we realize in the TMD heterostructure have lifetimes orders of magnitude longer than lifetimes of direct excitons in single-layer TMD and their energy is gate controlled. The realization of IXs at room temperature establishes the TMD heterostructures as a material platform both for a field of high-temperature quantum Bose gases of IXs and for a field of high-temperature excitonic devices.

Authors:

Calman, E. V. ^[1]; Fogler, M. M. ^[1]; Butov, L. V. ^[1]; Hu, S. ^[2];

^[2]; Geim, A. K. ^[2]

Univ. of California, San Diego, La Jolla, CA (United States)
Univ. of Manchester, Manchester (United Kingdom)

Publication Date:: 2018-05-14

Research Org.:: Univ. of California, San Diego, La Jolla, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1499677

Grant/Contract Number:: FG02-07ER46449

Resource Type:: Accepted Manuscript

Journal Name:: Nature Communications

Additional Journal Information:: Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats


                    Calman, E. V., Fogler, M. M., Butov, L. V., Hu, S., Mishchenko, A., and Geim, A. K. Indirect excitons in van der Waals heterostructures at room temperature.  United States: N. p., 2018. 
Web.  doi:10.1038/s41467-018-04293-7.

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                    Calman, E. V., Fogler, M. M., Butov, L. V., Hu, S., Mishchenko, A., & Geim, A. K. Indirect excitons in van der Waals heterostructures at room temperature.  United States.  https://doi.org/10.1038/s41467-018-04293-7

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                    Calman, E. V., Fogler, M. M., Butov, L. V., Hu, S., Mishchenko, A., and Geim, A. K. Mon .  
"Indirect excitons in van der Waals heterostructures at room temperature".  United States.  https://doi.org/10.1038/s41467-018-04293-7.  https://www.osti.gov/servlets/purl/1499677.

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@article{osti_1499677,

  title        = {Indirect excitons in van der Waals heterostructures at room temperature},

  author       = {Calman, E. V. and Fogler, M. M. and Butov, L. V. and Hu, S. and Mishchenko, A. and Geim, A. K.},

  abstractNote = {Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs were extensively studied in III–V and II–VI semiconductor heterostructures where IX range of existence has been limited to low temperatures. Here, we present the observation of IXs at room temperature in van der Waals transition metal dichalcogenide (TMD) heterostructures. Here, this is achieved in TMD heterostructures based on monolayers of MoS2 separated by atomically thin hexagonal boron nitride. The IXs we realize in the TMD heterostructure have lifetimes orders of magnitude longer than lifetimes of direct excitons in single-layer TMD and their energy is gate controlled. The realization of IXs at room temperature establishes the TMD heterostructures as a material platform both for a field of high-temperature quantum Bose gases of IXs and for a field of high-temperature excitonic devices.},

  doi          = {10.1038/s41467-018-04293-7},

  journal      = {Nature Communications},

  number       = 1,

  volume       = 9,

  place        = {United States},

  year         = {2018},

  month        = {5}

}

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Fig. 1 : MoS₂/hBN coupled quantum well heterostructure. The coupled quantum well van der Waals heterostructure layer (a) and energy-band (b) diagrams. The ovals indicate a direct exciton (DX) and an indirect exciton (IX) composed of an electron (−) and a hole (+). (c) Microscope image showing the layer patternmore »

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Similar Records

Title: Indirect excitons in van der Waals heterostructures at room temperature

Abstract

Citation Formats

Figures / Tables:

Spin Currents in a Coherent Exciton Gas journal, June 2013

Exciton condensation and perfect Coulomb drag journal, August 2012

Exciton Radiative Lifetimes in Two-Dimensional Transition Metal Dichalcogenides journal, March 2015

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides journal, April 2014

Van der Waals heterostructures journal, July 2013

Direct and indirect magnetoexcitons in symmetric In x Ga 1 − x As/GaAs coupled quantum wells journal, October 1995

High-temperature superfluidity with indirect excitons in van der Waals heterostructures journal, July 2014

Excitonic devices journal, August 2017

Valley-polarized exciton dynamics in a 2D semiconductor heterostructure journal, February 2016

Thermal dissociation of inter-layer excitons in MoS 2 /MoSe 2 hetero-bilayers journal, January 2017

Transport of indirect excitons in ZnO quantum wells journal, January 2015

Stimulated Scattering of Indirect Excitons in Coupled Quantum Wells: Signature of a Degenerate Bose-Gas of Excitons journal, June 2001

Interlayer Excitons and Band Alignment in MoS 2 /hBN/WSe 2 van der Waals Heterostructures journal, January 2017

Spontaneous coherence in a cold exciton gas journal, March 2012

Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures journal, August 2014

Internal electric field in wurtzite Zn O ∕ Zn 0.78 Mg 0.22 O quantum wells journal, December 2005

Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures journal, May 1994

Probing excitonic dark states in single-layer tungsten disulphide journal, August 2014

Low-temperature photocarrier dynamics in monolayer MoS 2 journal, September 2011

Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure journal, June 2017

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures journal, February 2012

Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides journal, April 1987

Long-Lived Direct and Indirect Interlayer Excitons in van der Waals Heterostructures journal, August 2017

Indirect excitons in coupled quantum well structures journal, February 1992

Excitonic switches operating at around 100 K journal, September 2009

Electric-field effects on exciton lifetimes in symmetric coupled GaAs/ Al 0.3 Ga 0.7 As double quantum wells journal, November 1990

Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells journal, May 2015

Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2 journal, August 2014

Control of excitons in multi-layer van der Waals heterostructures journal, March 2016

Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures journal, March 1984

Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite G a N / A l 0.15 Ga 0.85 N quantum well after high photoexcitation journal, January 2004

Fluctuation and commensurability effect of exciton density wave journal, June 2015

Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures journal, February 2015

Room-Temperature Transport of Indirect Excitons in ( Al , Ga ) N / GaN Quantum Wells journal, July 2016

Tightly Bound Trions in Transition Metal Dichalcogenide Heterostructures journal, May 2015

Control of excitons in multi-layer van der Waals heterostructures conference, January 2016

Excitonic Switches Operating at Around 100 K conference, January 2010

Low-temperature photocarrier dynamics in monolayer MoS2 text, January 2011

Stimulated Scattering of Indirect Excitons in Coupled Quantum Wells: Signature of a Degenerate Bose-Gas of Excitons text, January 2001

Spontaneous coherence in a cold exciton gas conference, January 2012

Exciton Condensation and Perfect Coulomb Drag text, January 2012

Probing Excitonic Dark States in Single-layer Tungsten Disulfide text, January 2014

High-temperature superfluidity with indirect excitons in van der Waals heterostructures text, January 2014

Fluctuation and Commensurability Effect of Exciton Density Wave text, January 2015

Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells text, January 2015

Control of excitons in multi-layer van der Waals heterostructures text, January 2015

Interlayer excitons and Band Alignment in MoS$_2$/hBN/WSe$_2$ van der Waals Heterostructures text, January 2016

Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure text, January 2017

Long-lived direct and indirect interlayer excitons in van der Waals heterostructures text, January 2017

Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide journal, December 2018

Atomic‐Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications journal, May 2019

Wrap‐Around Core–Shell Heterostructures of Layered Crystals journal, May 2019

Multiphonon Raman Scattering in Transition Metal Dichalcogenide Double Layers journal, January 2020

Cross-dimensional electron-phonon coupling in van der Waals heterostructures journal, June 2019

Interlayer exciton dynamics in van der Waals heterostructures journal, February 2019

A type-II C 2 N/α-Te van der Waals heterojunction with improved optical properties by external perturbation journal, January 2019

Polarizability of germanium quantum dots with spatially separated electrons and holes in Ge/Si heterostructures journal, October 2019

Probing interlayer excitons in a vertical van der Waals p-n junction using a scanning probe microscopy technique journal, January 2019

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides journal, March 2019

Quantum anomalous valley Hall effect for bosons journal, September 2019

Observation of interlayer excitons in MoSe 2 single crystals journal, June 2018

Lateral interfaces of transition metal dichalcogenides: A stable tunable one-dimensional physics platform journal, January 2019

Interlayer excitons in bilayer MoS 2 with strong oscillator strength up to room temperature journal, January 2019

Magnon-Mediated Indirect Exciton Condensation through Antiferromagnetic Insulators journal, October 2019

Polarizability of germanium quantum dots with spatially separated electrons and holes journal, January 2020

Lateral and vertical heterostructures in two-dimensional transition-metal dichalcogenides [Invited] journal, January 2019

Lateral Interfaces of Transition Metal Dichalcogenides: A Stable Tunable One-Dimensional Physics Platform text, January 2018

Magnon-Mediated Indirect Exciton Condensation through Antiferromagnetic Insulators text, January 2019

Spin Currents in a Coherent Exciton Gas
journal, June 2013

Exciton condensation and perfect Coulomb drag
journal, August 2012

Exciton Radiative Lifetimes in Two-Dimensional Transition Metal Dichalcogenides
journal, March 2015

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
journal, April 2014

Van der Waals heterostructures
journal, July 2013

Direct and indirect magnetoexcitons in symmetric ${In}_{x}$ ${Ga}_{1 - x}$ As/GaAs coupled quantum wells
journal, October 1995

High-temperature superfluidity with indirect excitons in van der Waals heterostructures
journal, July 2014

Excitonic devices
journal, August 2017

Valley-polarized exciton dynamics in a 2D semiconductor heterostructure
journal, February 2016

Thermal dissociation of inter-layer excitons in MoS ₂ /MoSe ₂ hetero-bilayers
journal, January 2017

Transport of indirect excitons in ZnO quantum wells
journal, January 2015

Stimulated Scattering of Indirect Excitons in Coupled Quantum Wells: Signature of a Degenerate Bose-Gas of Excitons
journal, June 2001

Interlayer Excitons and Band Alignment in MoS ₂ /hBN/WSe ₂ van der Waals Heterostructures
journal, January 2017

Spontaneous coherence in a cold exciton gas
journal, March 2012

Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures
journal, August 2014

Internal electric field in wurtzite $Zn O ∕ {Zn}_{0.78} {Mg}_{0.22} O$ quantum wells
journal, December 2005

Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures
journal, May 1994

Probing excitonic dark states in single-layer tungsten disulphide
journal, August 2014

Low-temperature photocarrier dynamics in monolayer MoS ₂
journal, September 2011

Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure
journal, June 2017

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
journal, February 2012

Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides
journal, April 1987

Long-Lived Direct and Indirect Interlayer Excitons in van der Waals Heterostructures
journal, August 2017

Indirect excitons in coupled quantum well structures
journal, February 1992

Excitonic switches operating at around 100 K
journal, September 2009

Electric-field effects on exciton lifetimes in symmetric coupled GaAs/ ${Al}_{0.3}$ ${Ga}_{0.7}$ As double quantum wells
journal, November 1990

Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells
journal, May 2015

Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer ${WS}_{2}$
journal, August 2014

Control of excitons in multi-layer van der Waals heterostructures
journal, March 2016

Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures
journal, March 1984

Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite ${G a N / A l}_{0.15} {Ga}_{0.85} N$ quantum well after high photoexcitation
journal, January 2004

Fluctuation and commensurability effect of exciton density wave
journal, June 2015

Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures
journal, February 2015

Room-Temperature Transport of Indirect Excitons in $(Al, Ga) N / GaN$ Quantum Wells
journal, July 2016

Tightly Bound Trions in Transition Metal Dichalcogenide Heterostructures
journal, May 2015

Control of excitons in multi-layer van der Waals heterostructures
conference, January 2016

Excitonic Switches Operating at Around 100 K
conference, January 2010

Low-temperature photocarrier dynamics in monolayer MoS2
text, January 2011

Stimulated Scattering of Indirect Excitons in Coupled Quantum Wells: Signature of a Degenerate Bose-Gas of Excitons
text, January 2001

Spontaneous coherence in a cold exciton gas
conference, January 2012

Exciton Condensation and Perfect Coulomb Drag
text, January 2012

Probing Excitonic Dark States in Single-layer Tungsten Disulfide
text, January 2014

High-temperature superfluidity with indirect excitons in van der Waals heterostructures
text, January 2014

Fluctuation and Commensurability Effect of Exciton Density Wave
text, January 2015

Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells
text, January 2015

Control of excitons in multi-layer van der Waals heterostructures
text, January 2015

Interlayer excitons and Band Alignment in MoS$_2$/hBN/WSe$_2$ van der Waals Heterostructures
text, January 2016

Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure
text, January 2017

Long-lived direct and indirect interlayer excitons in van der Waals heterostructures
text, January 2017

Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide
journal, December 2018

Atomic‐Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications
journal, May 2019

Wrap‐Around Core–Shell Heterostructures of Layered Crystals
journal, May 2019

Multiphonon Raman Scattering in Transition Metal Dichalcogenide Double Layers
journal, January 2020

Cross-dimensional electron-phonon coupling in van der Waals heterostructures
journal, June 2019

Interlayer exciton dynamics in van der Waals heterostructures
journal, February 2019

A type-II C ₂ N/α-Te van der Waals heterojunction with improved optical properties by external perturbation
journal, January 2019

Polarizability of germanium quantum dots with spatially separated electrons and holes in Ge/Si heterostructures
journal, October 2019

Probing interlayer excitons in a vertical van der Waals p-n junction using a scanning probe microscopy technique
journal, January 2019

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides
journal, March 2019

Quantum anomalous valley Hall effect for bosons
journal, September 2019

Observation of interlayer excitons in ${MoSe}_{2}$ single crystals
journal, June 2018

Lateral interfaces of transition metal dichalcogenides: A stable tunable one-dimensional physics platform
journal, January 2019

Interlayer excitons in bilayer ${MoS}_{2}$ with strong oscillator strength up to room temperature
journal, January 2019

Magnon-Mediated Indirect Exciton Condensation through Antiferromagnetic Insulators
journal, October 2019

Polarizability of germanium quantum dots with spatially separated electrons and holes
journal, January 2020

Lateral and vertical heterostructures in two-dimensional transition-metal dichalcogenides [Invited]
journal, January 2019

Lateral Interfaces of Transition Metal Dichalcogenides: A Stable Tunable One-Dimensional Physics Platform
text, January 2018

Magnon-Mediated Indirect Exciton Condensation through Antiferromagnetic Insulators
text, January 2019