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Title: Indirect excitons in van der Waals heterostructures at room temperature

Journal Article · · Nature Communications

Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs were extensively studied in III–V and II–VI semiconductor heterostructures where IX range of existence has been limited to low temperatures. Here, we present the observation of IXs at room temperature in van der Waals transition metal dichalcogenide (TMD) heterostructures. Here, this is achieved in TMD heterostructures based on monolayers of MoS2 separated by atomically thin hexagonal boron nitride. The IXs we realize in the TMD heterostructure have lifetimes orders of magnitude longer than lifetimes of direct excitons in single-layer TMD and their energy is gate controlled. The realization of IXs at room temperature establishes the TMD heterostructures as a material platform both for a field of high-temperature quantum Bose gases of IXs and for a field of high-temperature excitonic devices.

Research Organization:
Univ. of California, San Diego, La Jolla, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
FG02-07ER46449
OSTI ID:
1499677
Journal Information:
Nature Communications, Vol. 9, Issue 1; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 108 works
Citation information provided by
Web of Science

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Cited By (17)

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Atomic‐Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications journal May 2019
Wrap‐Around Core–Shell Heterostructures of Layered Crystals journal May 2019
Multiphonon Raman Scattering in Transition Metal Dichalcogenide Double Layers journal January 2020
Cross-dimensional electron-phonon coupling in van der Waals heterostructures journal June 2019
Interlayer exciton dynamics in van der Waals heterostructures journal February 2019
A type-II C 2 N/α-Te van der Waals heterojunction with improved optical properties by external perturbation journal January 2019
Polarizability of germanium quantum dots with spatially separated electrons and holes in Ge/Si heterostructures journal October 2019
Probing interlayer excitons in a vertical van der Waals p-n junction using a scanning probe microscopy technique journal January 2019
Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides journal March 2019
Quantum anomalous valley Hall effect for bosons journal September 2019
Magnon-Mediated Indirect Exciton Condensation through Antiferromagnetic Insulators journal October 2019
Polarizability of germanium quantum dots with spatially separated electrons and holes journal January 2020
Lateral Interfaces of Transition Metal Dichalcogenides: A Stable Tunable One-Dimensional Physics Platform text January 2018
Magnon-Mediated Indirect Exciton Condensation through Antiferromagnetic Insulators text January 2019
Cross-dimensional electron-phonon coupling in van der Waals heterostructures journal June 2019
Quantum anomalous valley Hall effect for bosons journal September 2019

Figures / Tables (5)