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Title: The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

Abstract

The controlled formation of silicide materials is an ongoing challenge to facilitate the electrical contact of Si-based transistors. Due to the ongoing miniaturisation of the transistor, the silicide is trending to ever-thinner thickness’s. The corresponding increase in surface-to-volume ratio emphasises the importance of low-energetic interfaces. Intriguingly, the thickness reduction of nickel silicides results in an abrupt change in phase sequence. This paper investigates the sequence of the silicides phases and their preferential orientation with respect to the Si(001) substrate, for both “thin” (i.e., 9 nm) and “ultra-thin” (i.e., 3 nm) Ni films. Furthermore, as the addition of ternary elements is often considered in order to tailor the silicides’ properties, additives of Al, Co, and Pt are also included in this study. Our results show that the first silicide formed is epitaxial h-Ni2Si, regardless of initial thickness or alloyed composition. The transformations towards subsequent silicides are changed through the additive elements, which can be understood through solubility arguments and classical nucleation theory. The crystalline alignment of the formed silicides with the substrate significantly differs through alloying. Finally, the observed textures of sequential silicides could be linked through texture inheritance. Our study illustrates the nucleation of a new phase drive to reducemore » the interfacial energy at the silicide-substrate interface as well as at the interface with the silicide which is being consumed for these sub-10 nm thin films.« less

Authors:
ORCiD logo [1];  [1];  [2];  [2]; ORCiD logo [3];  [1]
  1. Ghent Univ. (Belgium). Department of Solid-State Sciences
  2. IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
  3. Synchrotron SOLEIL, Gif-sur-Yvette (France)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division
OSTI Identifier:
1499623
Alternate Identifier(s):
OSTI ID: 1436558
Report Number(s):
BNL-209623-2018-JACI
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
SC0012704; AC02–98CH10886; AC02-98CH10886
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 18; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Geenen, F. A., Solano, E., Jordan-Sweet, J., Lavoie, C., Mocuta, C., and Detavernier, C. The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture. United States: N. p., 2018. Web. doi:10.1063/1.5022070.
Geenen, F. A., Solano, E., Jordan-Sweet, J., Lavoie, C., Mocuta, C., & Detavernier, C. The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture. United States. doi:10.1063/1.5022070.
Geenen, F. A., Solano, E., Jordan-Sweet, J., Lavoie, C., Mocuta, C., and Detavernier, C. Wed . "The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture". United States. doi:10.1063/1.5022070. https://www.osti.gov/servlets/purl/1499623.
@article{osti_1499623,
title = {The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture},
author = {Geenen, F. A. and Solano, E. and Jordan-Sweet, J. and Lavoie, C. and Mocuta, C. and Detavernier, C.},
abstractNote = {The controlled formation of silicide materials is an ongoing challenge to facilitate the electrical contact of Si-based transistors. Due to the ongoing miniaturisation of the transistor, the silicide is trending to ever-thinner thickness’s. The corresponding increase in surface-to-volume ratio emphasises the importance of low-energetic interfaces. Intriguingly, the thickness reduction of nickel silicides results in an abrupt change in phase sequence. This paper investigates the sequence of the silicides phases and their preferential orientation with respect to the Si(001) substrate, for both “thin” (i.e., 9 nm) and “ultra-thin” (i.e., 3 nm) Ni films. Furthermore, as the addition of ternary elements is often considered in order to tailor the silicides’ properties, additives of Al, Co, and Pt are also included in this study. Our results show that the first silicide formed is epitaxial h-Ni2Si, regardless of initial thickness or alloyed composition. The transformations towards subsequent silicides are changed through the additive elements, which can be understood through solubility arguments and classical nucleation theory. The crystalline alignment of the formed silicides with the substrate significantly differs through alloying. Finally, the observed textures of sequential silicides could be linked through texture inheritance. Our study illustrates the nucleation of a new phase drive to reduce the interfacial energy at the silicide-substrate interface as well as at the interface with the silicide which is being consumed for these sub-10 nm thin films.},
doi = {10.1063/1.5022070},
journal = {Journal of Applied Physics},
number = 18,
volume = 123,
place = {United States},
year = {2018},
month = {5}
}

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