The Vacancy-Induced Electronic Structure of the SrTiO3-δ Surface
Abstract
The emergence of a 2D electron gas (2DEG) on the (001) surface of oxygen-deficient strontium titanate (SrTiO3-δ) is investigated. Using in situ soft X-ray spectroscopy and effective mass modeling, a series of quantitative band dia-grams are developed to describe the evolution of near-surface and bulk car-rier concentrations, downward band bending, and Fermi level along a lateral gradient of oxygen vacancies formed on SrTiO3-δ by direct-current resistive heating under ultrahigh vacuum conditions. Electrons are accumulated over a 3 nm region near the surface, confined within a potential well with saturated 300 meV downward band bending. The relation between Fermi levels and carrier concentrations near the surface suggests the density of states near the surface is much lower than the bulk density of states, which is consistent with the quantum-confined subbands of a 2DEG. The quantitative relation-ship between the surface and bulk electronic structures developed in this work provides a guide for precise engineering of the oxygen-vacancy-induced 2DEG in SrTiO3.
- Authors:
-
[1];
[3]
- Argonne National Lab. (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)
- Northwestern Univ., Evanston, IL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); Institute for Catalysis in Energy Processes (ICEP); USDOE
- OSTI Identifier:
- 1499278
- Alternate Identifier(s):
- OSTI ID: 1482131; OSTI ID: 1870982
- Grant/Contract Number:
- AC02-06CH11357; DMR-1334713; DMR-1333335; FG02-03ER15457; FG02-01ER45945; DE‐AC02‐06CH11357; DE‐FG02‐03ER15457; DE‐FG02‐01ER45945
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Electronic Materials
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 1; Journal ID: ISSN 2199-160X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SrTiO3 surface; effective mass modeling; electronic structure; in-situ x-ray spectroscopy; oxygen vacancies
Citation Formats
Cook, Seyoung, Dylla, Maxwell T., Rosenberg, Richard A., Mansley, Zachary R., Snyder, G. Jeffrey, Marks, Laurence D., and Fong, Dillon D. The Vacancy-Induced Electronic Structure of the SrTiO3-δ Surface. United States: N. p., 2018.
Web. doi:10.1002/aelm.201800460.
Cook, Seyoung, Dylla, Maxwell T., Rosenberg, Richard A., Mansley, Zachary R., Snyder, G. Jeffrey, Marks, Laurence D., & Fong, Dillon D. The Vacancy-Induced Electronic Structure of the SrTiO3-δ Surface. United States. https://doi.org/10.1002/aelm.201800460
Cook, Seyoung, Dylla, Maxwell T., Rosenberg, Richard A., Mansley, Zachary R., Snyder, G. Jeffrey, Marks, Laurence D., and Fong, Dillon D. Wed .
"The Vacancy-Induced Electronic Structure of the SrTiO3-δ Surface". United States. https://doi.org/10.1002/aelm.201800460. https://www.osti.gov/servlets/purl/1499278.
@article{osti_1499278,
title = {The Vacancy-Induced Electronic Structure of the SrTiO3-δ Surface},
author = {Cook, Seyoung and Dylla, Maxwell T. and Rosenberg, Richard A. and Mansley, Zachary R. and Snyder, G. Jeffrey and Marks, Laurence D. and Fong, Dillon D.},
abstractNote = {The emergence of a 2D electron gas (2DEG) on the (001) surface of oxygen-deficient strontium titanate (SrTiO3-δ) is investigated. Using in situ soft X-ray spectroscopy and effective mass modeling, a series of quantitative band dia-grams are developed to describe the evolution of near-surface and bulk car-rier concentrations, downward band bending, and Fermi level along a lateral gradient of oxygen vacancies formed on SrTiO3-δ by direct-current resistive heating under ultrahigh vacuum conditions. Electrons are accumulated over a 3 nm region near the surface, confined within a potential well with saturated 300 meV downward band bending. The relation between Fermi levels and carrier concentrations near the surface suggests the density of states near the surface is much lower than the bulk density of states, which is consistent with the quantum-confined subbands of a 2DEG. The quantitative relation-ship between the surface and bulk electronic structures developed in this work provides a guide for precise engineering of the oxygen-vacancy-induced 2DEG in SrTiO3.},
doi = {10.1002/aelm.201800460},
journal = {Advanced Electronic Materials},
number = 1,
volume = 5,
place = {United States},
year = {2018},
month = {11}
}
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