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Title: Unconventional large linear magnetoresistance in Cu2-xTe

Abstract

We report a large linear magnetoresistance in Cu2-xTe, reaching Δρ/ρ(0) = 250% at 2 K in a 9 T field, for samples with x = 0.13 to 0.22. These results are comparable to those for Ag2X materials, though for Cu2-xTe the carrier densities are considerably larger. Examining the magnitudes and the crossover from quadratic to high-field linear behavior, we show that models based on classical transport behavior best explain the observed results. The effects are traced to the misdirection of currents in high mobility transport channels, likely due to behavior at grain boundaries such as topological surface states or a high mobility interface phase. The resistivity also exhibits a T2 dependence in the temperature range where the large linear MR appears, an indicator of electron-electron interaction effects within the high mobility states. Thus this is an example of a system in which electron-electron interactions dominate the low-temperature linear magnetoresistance.

Authors:
ORCiD logo [1];  [2];  [1];  [1];  [2];  [1]
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  1. Texas A & M Univ., College Station, TX (United States)
  2. Univ. of Michigan, Ann Arbor, MI (United States)
Publication Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1499132
Alternate Identifier(s):
OSTI ID: 1439756
Grant/Contract Number:  
SC0008574; SC-0008574
Resource Type:
Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 8; Journal Issue: 5; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Sirusi, Ali A., Page, Alexander, Steinke, Lucia, Aronson, Meigan C., Uher, Ctirad, and Ross, Joseph H. Unconventional large linear magnetoresistance in Cu2-xTe. United States: N. p., 2018. Web. doi:10.1063/1.4994071.
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Sirusi, Ali A., Page, Alexander, Steinke, Lucia, Aronson, Meigan C., Uher, Ctirad, & Ross, Joseph H. Unconventional large linear magnetoresistance in Cu2-xTe. United States. doi:https://doi.org/10.1063/1.4994071
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Sirusi, Ali A., Page, Alexander, Steinke, Lucia, Aronson, Meigan C., Uher, Ctirad, and Ross, Joseph H. Thu . "Unconventional large linear magnetoresistance in Cu2-xTe". United States. doi:https://doi.org/10.1063/1.4994071. https://www.osti.gov/servlets/purl/1499132.
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@article{osti_1499132,
title = {Unconventional large linear magnetoresistance in Cu2-xTe},
author = {Sirusi, Ali A. and Page, Alexander and Steinke, Lucia and Aronson, Meigan C. and Uher, Ctirad and Ross, Joseph H.},
abstractNote = {We report a large linear magnetoresistance in Cu2-xTe, reaching Δρ/ρ(0) = 250% at 2 K in a 9 T field, for samples with x = 0.13 to 0.22. These results are comparable to those for Ag2X materials, though for Cu2-xTe the carrier densities are considerably larger. Examining the magnitudes and the crossover from quadratic to high-field linear behavior, we show that models based on classical transport behavior best explain the observed results. The effects are traced to the misdirection of currents in high mobility transport channels, likely due to behavior at grain boundaries such as topological surface states or a high mobility interface phase. The resistivity also exhibits a T2 dependence in the temperature range where the large linear MR appears, an indicator of electron-electron interaction effects within the high mobility states. Thus this is an example of a system in which electron-electron interactions dominate the low-temperature linear magnetoresistance.},
doi = {10.1063/1.4994071},
journal = {AIP Advances},
number = 5,
volume = 8,
place = {United States},
year = {2018},
month = {5}
}
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Journal Article:
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Publisher's Version of Record
DOI:  https://doi.org/10.1063/1.4994071
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Figures / Tables:

FIG. 1. FIG. 1. : Resistivity vs. $T$ for three Cu2−xTe samples at low temperatures. Solid curves are $T$$n$ fits as explained in text. Inset: Hall effect-derived carrier densities.
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    Figures / Tables found in this record:

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    FIG. 2. (p. 4)figure
    FIG. 3. (p. 5)figure
    FIG. 4. (p. 6)figure
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