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Title: Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation

Journal Article · · Chemistry of Materials
ORCiD logo [1];  [2];  [3];  [4]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [5]; ORCiD logo [6]
  1. Stanford Univ., CA (United States). Dept. of Chemistry
  2. Eindhoven Univ. of Technology (Netherlands). Dept. of Applied Physics
  3. Chonbuk National Univ., Jeonju (Korea, Republic of). Division of Advanced Materials Engineering; Stanford Univ., CA (United States). Dept. of Chemical Engineering
  4. Toyota Motor Europe NV/SA, Zaventem (Belgium). Advanced Technology 1
  5. Stanford Univ., CA (United States). Dept. of Chemical Engineering
  6. Eindhoven Univ. of Technology (Netherlands). Dept. of Applied Physics; Stanford Univ., CA (United States). Dept. of Chemical Engineering

Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociation of the oxygen molecules on the noble metal surface, while no deposition takes place on inert surfaces that do not dissociate oxygen (i.e., SiO2, Al2O3, Au). The process is demonstrated for selective deposition of iron oxide and nickel oxide on platinum and iridium substrates. Characterization by in situ spectroscopic ellipsometry, transmission electron microscopy, scanning Auger electron spectroscopy, and X-ray photoelectron spectroscopy confirms a very high degree of selectivity, with a constant ALD growth rate on the catalytic metal substrates and no deposition on inert substrates, even after 300 ALD cycles. We demonstrate the area-selective ALD approach on planar and patterned substrates and use it to prepare Pt/Fe2O3 core/shell nanoparticles. Finally, the approach is proposed to be extendable beyond the materials presented here, specifically to other metal oxide ALD processes for which the precursor requires a strong oxidizing agent for growth.

Research Organization:
Stanford Univ., CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0004782
OSTI ID:
1499117
Alternate ID(s):
OSTI ID: 1508272
Journal Information:
Chemistry of Materials, Vol. 30, Issue 3; ISSN 0897-4756
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 86 works
Citation information provided by
Web of Science

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Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning journal September 2015
Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum journal May 2012
Supported Core/Shell Bimetallic Nanoparticles Synthesis by Atomic Layer Deposition journal August 2012
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journal May 2014
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journal January 2017
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Reaction Mechanism Studies on Atomic Layer Deposition of Ruthenium and Platinum journal January 2003
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Remote Plasma Atomic Layer Deposition of Co 3 O 4 Thin Films journal September 2009

Cited By (3)

Spontaneous selective deposition of iron oxide nanoparticles on graphite as model catalysts journal January 2019
Understanding chemical and physical mechanisms in atomic layer deposition journal January 2020
Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices journal January 2019

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