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Title: Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation

Abstract

Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O 2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociation of the oxygen molecules on the noble metal surface, while no deposition takes place on inert surfaces that do not dissociate oxygen (i.e., SiO 2, Al2O 3, Au). The process is demonstrated for selective deposition of iron oxide and nickel oxide on platinum and iridium substrates. Characterization by in situ spectroscopic ellipsometry, transmission electron microscopy, scanning Auger electron spectroscopy, and X-ray photoelectron spectroscopy confirms a very high degree of selectivity, with a constant ALD growth rate on the catalytic metal substrates and no deposition on inert substrates, even after 300 ALD cycles. We demonstrate the area-selective ALD approach on planar and patterned substrates and use it to prepare Pt/Fe 2O 3 core/shell nanoparticles. Finally, the approach is proposed to be extendable beyond the materials presented here, specifically to other metal oxide ALD processes for which the precursor requires amore » strong oxidizing agent for growth.« less

Authors:
ORCiD logo [1];  [2];  [3];  [4]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [5]; ORCiD logo [6]
  1. Stanford Univ., CA (United States). Dept. of Chemistry
  2. Eindhoven Univ. of Technology (Netherlands). Dept. of Applied Physics
  3. Chonbuk National Univ., Jeonju (Korea, Republic of). Division of Advanced Materials Engineering; Stanford Univ., CA (United States). Dept. of Chemical Engineering
  4. Toyota Motor Europe NV/SA, Zaventem (Belgium). Advanced Technology 1
  5. Stanford Univ., CA (United States). Dept. of Chemical Engineering
  6. Eindhoven Univ. of Technology (Netherlands). Dept. of Applied Physics; Stanford Univ., CA (United States). Dept. of Chemical Engineering
Publication Date:
Research Org.:
Stanford Univ., CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1499117
Alternate Identifier(s):
OSTI ID: 1508272
Grant/Contract Number:  
SC0004782
Resource Type:
Accepted Manuscript
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 3; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Singh, Joseph A., Thissen, Nick F. W., Kim, Woo-Hee, Johnson, Hannah, Kessels, Wilhelmus M. M., Bol, Ageeth A., Bent, Stacey F., and Mackus, Adriaan J. M. Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation. United States: N. p., 2018. Web. doi:10.1021/acs.chemmater.7b03818.
Singh, Joseph A., Thissen, Nick F. W., Kim, Woo-Hee, Johnson, Hannah, Kessels, Wilhelmus M. M., Bol, Ageeth A., Bent, Stacey F., & Mackus, Adriaan J. M. Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation. United States. doi:10.1021/acs.chemmater.7b03818.
Singh, Joseph A., Thissen, Nick F. W., Kim, Woo-Hee, Johnson, Hannah, Kessels, Wilhelmus M. M., Bol, Ageeth A., Bent, Stacey F., and Mackus, Adriaan J. M. Tue . "Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation". United States. doi:10.1021/acs.chemmater.7b03818. https://www.osti.gov/servlets/purl/1499117.
@article{osti_1499117,
title = {Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation},
author = {Singh, Joseph A. and Thissen, Nick F. W. and Kim, Woo-Hee and Johnson, Hannah and Kessels, Wilhelmus M. M. and Bol, Ageeth A. and Bent, Stacey F. and Mackus, Adriaan J. M.},
abstractNote = {Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociation of the oxygen molecules on the noble metal surface, while no deposition takes place on inert surfaces that do not dissociate oxygen (i.e., SiO2, Al2O3, Au). The process is demonstrated for selective deposition of iron oxide and nickel oxide on platinum and iridium substrates. Characterization by in situ spectroscopic ellipsometry, transmission electron microscopy, scanning Auger electron spectroscopy, and X-ray photoelectron spectroscopy confirms a very high degree of selectivity, with a constant ALD growth rate on the catalytic metal substrates and no deposition on inert substrates, even after 300 ALD cycles. We demonstrate the area-selective ALD approach on planar and patterned substrates and use it to prepare Pt/Fe2O3 core/shell nanoparticles. Finally, the approach is proposed to be extendable beyond the materials presented here, specifically to other metal oxide ALD processes for which the precursor requires a strong oxidizing agent for growth.},
doi = {10.1021/acs.chemmater.7b03818},
journal = {Chemistry of Materials},
number = 3,
volume = 30,
place = {United States},
year = {2018},
month = {1}
}

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