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Title: Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC

Abstract

Abstract The combination of W and SiC has many applications such as a hot cell of a thermionic energy converter, nuclear material, and high temperature microelectronics. In this study, a 2 µm thick TiN film is introduced as a diffusion barrier between SiC and W to avoid the inter‐diffusion reaction at high temperature. The effect of annealing temperature on the surface morphology and microstructure of the TiN film is studied to explore its high temperature stability. Then 500 nm W film is sputtered on the TiN film to characterize the inter‐diffusion and stability of the W/TiN/SiC multilayer at 1100°C by XRD, Raman spectroscopy and cross‐sectional EDS mapping techniques. The results indicate that the W/TiN/SiC multilayer is very stable even when heated at 1100°C for 25 hours.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [2];  [2];  [2]; ORCiD logo [2]
  1. Shanghai Jiao Tong Univ. (China). National Key Lab. of Science and Technology on Micro/Nano Fabrication; Univ. of California, Berkeley, CA (United States)
  2. Univ. of California, Berkeley, CA (United States)
Publication Date:
Research Org.:
Stanford Univ., CA (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1613676
Alternate Identifier(s):
OSTI ID: 1498578
Grant/Contract Number:  
AR0000664; AC02-05CH11231; DE‐AR0000664
Resource Type:
Accepted Manuscript
Journal Name:
Journal of the American Ceramic Society
Additional Journal Information:
Journal Volume: 102; Journal Issue: 9; Journal ID: ISSN 0002-7820
Publisher:
American Ceramic Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; diffusion barrier layer; interface stability; SiC; TiN film; W film

Citation Formats

Cheng, Ping, DelaCruz, Steven, Tsai, Dung‐Sheng, Wang, Zhongtao, Carraro, Carlo, and Maboudian, Roya. Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC. United States: N. p., 2019. Web. doi:10.1111/jace.16392.
Cheng, Ping, DelaCruz, Steven, Tsai, Dung‐Sheng, Wang, Zhongtao, Carraro, Carlo, & Maboudian, Roya. Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC. United States. https://doi.org/10.1111/jace.16392
Cheng, Ping, DelaCruz, Steven, Tsai, Dung‐Sheng, Wang, Zhongtao, Carraro, Carlo, and Maboudian, Roya. Mon . "Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC". United States. https://doi.org/10.1111/jace.16392. https://www.osti.gov/servlets/purl/1613676.
@article{osti_1613676,
title = {Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC},
author = {Cheng, Ping and DelaCruz, Steven and Tsai, Dung‐Sheng and Wang, Zhongtao and Carraro, Carlo and Maboudian, Roya},
abstractNote = {Abstract The combination of W and SiC has many applications such as a hot cell of a thermionic energy converter, nuclear material, and high temperature microelectronics. In this study, a 2 µm thick TiN film is introduced as a diffusion barrier between SiC and W to avoid the inter‐diffusion reaction at high temperature. The effect of annealing temperature on the surface morphology and microstructure of the TiN film is studied to explore its high temperature stability. Then 500 nm W film is sputtered on the TiN film to characterize the inter‐diffusion and stability of the W/TiN/SiC multilayer at 1100°C by XRD, Raman spectroscopy and cross‐sectional EDS mapping techniques. The results indicate that the W/TiN/SiC multilayer is very stable even when heated at 1100°C for 25 hours.},
doi = {10.1111/jace.16392},
journal = {Journal of the American Ceramic Society},
number = 9,
volume = 102,
place = {United States},
year = {Mon Feb 18 00:00:00 EST 2019},
month = {Mon Feb 18 00:00:00 EST 2019}
}

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