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Title: Stabilization of ferroelectric phase of Hf 0.58Zr 0.42O 2 on NbN at 4 K

Abstract

Ferroelectricity in doped and alloyed hafnia thin films has been demonstrated using several different electrodes, with TiN and TaN being most prominent. Here, in this work, we demonstrate ferroelectric Hf 0.58Zr 0.42O 2 thin films with superconducting NbN electrodes at cryogenic temperatures. Demonstration of polarization—electric field [P(E)] response at liquid helium cryogenic temperatures, 4 K, suggests that the polarization is switchable over a wide temperature range after an initial 600 °C anneal. Further, room temperature P(E) and capacitance measurements demonstrate an expected polarization response with wake-up required to reach the steady state. Wake-up cycling at 4 K is observed to have no effect upon the ferroelectric phase suggesting an oxygen vacancy mobility freeze out whereas wake-up cycling at 294 K demonstrates close to a 3× increase in remanent polarization. In conclusion, this integration of a ferroelectric Hf 0.58Zr 0.42O 2 thin film with NbN demonstrates the suitability of a highly scalable ferroelectric in applications for cryogenic technologies.

Authors:
 [1];  [1];  [1]; ORCiD logo [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of Virginia, Charlottesville, VA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1498486
Report Number(s):
SAND-2018-12166J
Journal ID: ISSN 0003-6951; 669072
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Henry, M. D., Smith, S. W., Lewis, R. M., and Ihlefeld, J. F.. Stabilization of ferroelectric phase of Hf0.58Zr0.42O2 on NbN at 4 K. United States: N. p., 2019. Web. doi:10.1063/1.5052435.
Henry, M. D., Smith, S. W., Lewis, R. M., & Ihlefeld, J. F.. Stabilization of ferroelectric phase of Hf0.58Zr0.42O2 on NbN at 4 K. United States. doi:10.1063/1.5052435.
Henry, M. D., Smith, S. W., Lewis, R. M., and Ihlefeld, J. F.. Tue . "Stabilization of ferroelectric phase of Hf0.58Zr0.42O2 on NbN at 4 K". United States. doi:10.1063/1.5052435.
@article{osti_1498486,
title = {Stabilization of ferroelectric phase of Hf0.58Zr0.42O2 on NbN at 4 K},
author = {Henry, M. D. and Smith, S. W. and Lewis, R. M. and Ihlefeld, J. F.},
abstractNote = {Ferroelectricity in doped and alloyed hafnia thin films has been demonstrated using several different electrodes, with TiN and TaN being most prominent. Here, in this work, we demonstrate ferroelectric Hf0.58Zr0.42O2 thin films with superconducting NbN electrodes at cryogenic temperatures. Demonstration of polarization—electric field [P(E)] response at liquid helium cryogenic temperatures, 4 K, suggests that the polarization is switchable over a wide temperature range after an initial 600 °C anneal. Further, room temperature P(E) and capacitance measurements demonstrate an expected polarization response with wake-up required to reach the steady state. Wake-up cycling at 4 K is observed to have no effect upon the ferroelectric phase suggesting an oxygen vacancy mobility freeze out whereas wake-up cycling at 294 K demonstrates close to a 3× increase in remanent polarization. In conclusion, this integration of a ferroelectric Hf0.58Zr0.42O2 thin film with NbN demonstrates the suitability of a highly scalable ferroelectric in applications for cryogenic technologies.},
doi = {10.1063/1.5052435},
journal = {Applied Physics Letters},
number = 9,
volume = 114,
place = {United States},
year = {2019},
month = {3}
}

Journal Article:
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This content will become publicly available on March 5, 2020
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