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Title: Quantum dots with split enhancement gate tunnel barrier control

Abstract

We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures.

Authors:
 [1];  [2];  [1]; ORCiD logo [3];  [2]; ORCiD logo [2];  [2];  [2];  [2];  [2];  [2];  [2];  [4]
  1. Univ. de Sherbrooke (Canada)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Univ. of New Mexico, Albuquerque, NM (United States)
  4. Univ. de Sherbrooke (Canada); Canadian Inst. for Advanced Research, Toronto, ON (Canada)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1498477
Alternate Identifier(s):
OSTI ID: 1498765
Report Number(s):
SAND-2019-0013J; SAND-2018-0712J
Journal ID: ISSN 0003-6951; 671222
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Rochette, Sophie, Rudolph, M., Roy, A. -M., Curry, M. J., Eyck, G. A. Ten, Manginell, R. P., Wendt, J. R., Pluym, T., Carr, S. M., Ward, D. R., Lilly, M. P., Carroll, M. S., and Pioro-Ladrière, M.. Quantum dots with split enhancement gate tunnel barrier control. United States: N. p., 2019. Web. doi:10.1063/1.5091111.
Rochette, Sophie, Rudolph, M., Roy, A. -M., Curry, M. J., Eyck, G. A. Ten, Manginell, R. P., Wendt, J. R., Pluym, T., Carr, S. M., Ward, D. R., Lilly, M. P., Carroll, M. S., & Pioro-Ladrière, M.. Quantum dots with split enhancement gate tunnel barrier control. United States. doi:10.1063/1.5091111.
Rochette, Sophie, Rudolph, M., Roy, A. -M., Curry, M. J., Eyck, G. A. Ten, Manginell, R. P., Wendt, J. R., Pluym, T., Carr, S. M., Ward, D. R., Lilly, M. P., Carroll, M. S., and Pioro-Ladrière, M.. Tue . "Quantum dots with split enhancement gate tunnel barrier control". United States. doi:10.1063/1.5091111.
@article{osti_1498477,
title = {Quantum dots with split enhancement gate tunnel barrier control},
author = {Rochette, Sophie and Rudolph, M. and Roy, A. -M. and Curry, M. J. and Eyck, G. A. Ten and Manginell, R. P. and Wendt, J. R. and Pluym, T. and Carr, S. M. and Ward, D. R. and Lilly, M. P. and Carroll, M. S. and Pioro-Ladrière, M.},
abstractNote = {We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures.},
doi = {10.1063/1.5091111},
journal = {Applied Physics Letters},
number = 8,
volume = 114,
place = {United States},
year = {2019},
month = {2}
}

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This content will become publicly available on February 26, 2020
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