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Title: Single hole spin relaxation probed by fast single-shot latched charge sensing

Abstract

Hole spins have recently emerged as attractive candidates for solid-state qubits for quantum computing. Their state can be manipulated electrically by taking advantage of the strong spin-orbit interaction (SOI). Crucially, these systems promise longer spin coherence lifetimes owing to their weak interactions with nuclear spins as compared to electron spin qubits. Here we measure the spin relaxation time T1 of a single hole in a GaAs gated lateral double quantum dot device. We propose a protocol converting the spin state into long-lived charge configurations by the SOI-assisted spin-flip tunneling between dots. By interrogating the system with a charge detector we extract the magnetic-field dependence of T1 ∝ B-5 for fields larger than B = 0.5 T, suggesting the phonon-assisted Dresselhaus SOI as the relaxation channel. This coupling limits the measured values of T1 from ~400 ns at B = 1.5 T up to ~60 μs at B = 0.5 T.

Authors:
 [1];  [1];  [2];  [2];  [2];  [2];  [3];  [4];  [4]
  1. National Research Council of Canada, Ottawa, ON (Canada). Security and Disruptive Technologies Research Centre; Univ. of Waterloo, ON (Canada). Dept. of Physics and Astronomy
  2. National Research Council of Canada, Ottawa, ON (Canada). Security and Disruptive Technologies Research Centre
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); National Research Council of Canada, Ottawa, ON (Canada)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); Natural Sciences and Engineering Research Council of Canada (NSERC)
OSTI Identifier:
1498473
Report Number(s):
SAND-2019-0391J
Journal ID: ISSN 2399-3650; 671538
Grant/Contract Number:  
NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Communications Physics
Additional Journal Information:
Journal Volume: 2; Journal ID: ISSN 2399-3650
Publisher:
Springer Nature
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; nanoscale devices; nanoscience and technology; quantum information; quantum physics; techniques and instrumentation

Citation Formats

Bogan, Alex, Studenikin, Sergei, Korkusinski, Marek, Gaudreau, Louis, Zawadzki, Piotr, Sachrajda, Andy, Tracy, Lisa, Reno, John, and Hargett, Terry. Single hole spin relaxation probed by fast single-shot latched charge sensing. United States: N. p., 2019. Web. https://doi.org/10.1038/s42005-019-0113-0.
Bogan, Alex, Studenikin, Sergei, Korkusinski, Marek, Gaudreau, Louis, Zawadzki, Piotr, Sachrajda, Andy, Tracy, Lisa, Reno, John, & Hargett, Terry. Single hole spin relaxation probed by fast single-shot latched charge sensing. United States. https://doi.org/10.1038/s42005-019-0113-0
Bogan, Alex, Studenikin, Sergei, Korkusinski, Marek, Gaudreau, Louis, Zawadzki, Piotr, Sachrajda, Andy, Tracy, Lisa, Reno, John, and Hargett, Terry. Mon . "Single hole spin relaxation probed by fast single-shot latched charge sensing". United States. https://doi.org/10.1038/s42005-019-0113-0. https://www.osti.gov/servlets/purl/1498473.
@article{osti_1498473,
title = {Single hole spin relaxation probed by fast single-shot latched charge sensing},
author = {Bogan, Alex and Studenikin, Sergei and Korkusinski, Marek and Gaudreau, Louis and Zawadzki, Piotr and Sachrajda, Andy and Tracy, Lisa and Reno, John and Hargett, Terry},
abstractNote = {Hole spins have recently emerged as attractive candidates for solid-state qubits for quantum computing. Their state can be manipulated electrically by taking advantage of the strong spin-orbit interaction (SOI). Crucially, these systems promise longer spin coherence lifetimes owing to their weak interactions with nuclear spins as compared to electron spin qubits. Here we measure the spin relaxation time T1 of a single hole in a GaAs gated lateral double quantum dot device. We propose a protocol converting the spin state into long-lived charge configurations by the SOI-assisted spin-flip tunneling between dots. By interrogating the system with a charge detector we extract the magnetic-field dependence of T1 ∝ B-5 for fields larger than B = 0.5 T, suggesting the phonon-assisted Dresselhaus SOI as the relaxation channel. This coupling limits the measured values of T1 from ~400 ns at B = 1.5 T up to ~60 μs at B = 0.5 T.},
doi = {10.1038/s42005-019-0113-0},
journal = {Communications Physics},
number = ,
volume = 2,
place = {United States},
year = {2019},
month = {2}
}

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    Works referencing / citing this record:

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