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Title: Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Abstract

Here, we demonstrate extension of electron-beam lithography using conventional resists and pattern transfer processes to single-digit nanometer dimensions by employing an aberration-corrected scanning transmission electron microscope as the exposure tool. Here, we present results of single-digit nanometer patterning of two widely used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. The method achieves sub-5 nanometer features in poly (methyl methacrylate) and sub-10 nanometer resolution in hydrogen silsesquioxane. High-fidelity transfer of these patterns into target materials of choice can be performed using metal lift-off, plasma etch, and resist infiltration with organometallics.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1498277
Report Number(s):
BNL-211323-2019-JAAM
Journal ID: ISSN 1940-087X; jove
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Visualized Experiments
Additional Journal Information:
Journal Issue: 139; Journal ID: ISSN 1940-087X
Publisher:
MyJoVE Corp.
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; nanofabrication; electron-beam lithography; aberration correction; electron microscopy nanomaterials

Citation Formats

Camino, Fernando E., Manfrinato, Vitor R., Stein, Aaron, Zhang, Lihua, Lu, Ming, Stach, Eric A., and Black, Charles T. Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope. United States: N. p., 2018. Web. doi:10.3791/58272.
Camino, Fernando E., Manfrinato, Vitor R., Stein, Aaron, Zhang, Lihua, Lu, Ming, Stach, Eric A., & Black, Charles T. Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope. United States. doi:10.3791/58272.
Camino, Fernando E., Manfrinato, Vitor R., Stein, Aaron, Zhang, Lihua, Lu, Ming, Stach, Eric A., and Black, Charles T. Mon . "Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope". United States. doi:10.3791/58272. https://www.osti.gov/servlets/purl/1498277.
@article{osti_1498277,
title = {Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope},
author = {Camino, Fernando E. and Manfrinato, Vitor R. and Stein, Aaron and Zhang, Lihua and Lu, Ming and Stach, Eric A. and Black, Charles T.},
abstractNote = {Here, we demonstrate extension of electron-beam lithography using conventional resists and pattern transfer processes to single-digit nanometer dimensions by employing an aberration-corrected scanning transmission electron microscope as the exposure tool. Here, we present results of single-digit nanometer patterning of two widely used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. The method achieves sub-5 nanometer features in poly (methyl methacrylate) and sub-10 nanometer resolution in hydrogen silsesquioxane. High-fidelity transfer of these patterns into target materials of choice can be performed using metal lift-off, plasma etch, and resist infiltration with organometallics.},
doi = {10.3791/58272},
journal = {Journal of Visualized Experiments},
number = 139,
volume = ,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
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