In Situ Transmission Electron Microscopy Study of Molybdenum Oxide Contacts for Silicon Solar Cells

Ali, Haider; Koul, Supriya; Gregory, Geoffrey; Bullock, James; Javey, Ali; Kushima, Akihiro; Davis, Kristopher O.

doi:10.1002/pssa.201800998

Title: In Situ Transmission Electron Microscopy Study of Molybdenum Oxide Contacts for Silicon Solar Cells

Abstract

In this study, a molybdenum oxide (MoOx) and aluminum (Al) contact structure for crystalline silicon (c-Si) solar cells was investigated using a combination of transmission line measurements (TLM) and in-situ transmission electron microscopy (TEM). Cross-sectional high-resolution TEM (HRTEM) micrographs revealed a ≈2 nm silicon oxide (SiOx) interlayer at c-Si/MoOx interface in the as-deposited state, indicating that formation of SiOx occurs during deposition of MoOx. Moreover, oxygen diffusion takes place from MoOx towards Al resulting in the formation of a ≈2-3 nm aluminum oxide (AlOx) interlayer at the MoOx/Al interface. Overall, it was observed that MoOx/Al contact is relatively stable upon annealing up to 200°C and still retains ohmic transport with sufficiently low contact resistivity.

Authors:

Ali, Haider ^[1]; Koul, Supriya ^[2]; Gregory, Geoffrey ^[1]; Bullock, James ^[3]; Javey, Ali ^[3]; Kushima, Akihiro ^[2];

^[1]

Univ. of Central Florida, Orlando, FL (United States); Univ. of Central Florida, Cocoa, FL (United States)
Univ. of Central Florida, Orlando, FL (United States)
Univ. of California, Berkeley, CA (United States)

Publication Date:: Wed Mar 06 00:00:00 EST 2019

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Univ. of Central Florida, Orlando, FL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES), Materials Sciences & Engineering Division; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1642675

Alternate Identifier(s):: OSTI ID: 1498177; OSTI ID: 1755757

Grant/Contract Number:: AC02-05CH11231; EE0007533; AC02‐05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: Physica Status Solidi. A, Applications and Materials Science

Additional Journal Information:: Journal Volume: 216; Journal Issue: 7; Journal ID: ISSN 1862-6300

Publisher:: Wiley

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; crystalline silicon; hole-selective; in situ TEM; molybdenum oxide

Citation Formats


                    Ali, Haider, Koul, Supriya, Gregory, Geoffrey, Bullock, James, Javey, Ali, Kushima, Akihiro, and Davis, Kristopher O. In Situ Transmission Electron Microscopy Study of Molybdenum Oxide Contacts for Silicon Solar Cells.  United States: N. p., 2019. 
Web.  doi:10.1002/pssa.201800998.

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                    Ali, Haider, Koul, Supriya, Gregory, Geoffrey, Bullock, James, Javey, Ali, Kushima, Akihiro, & Davis, Kristopher O. In Situ Transmission Electron Microscopy Study of Molybdenum Oxide Contacts for Silicon Solar Cells.  United States.  https://doi.org/10.1002/pssa.201800998

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                    Ali, Haider, Koul, Supriya, Gregory, Geoffrey, Bullock, James, Javey, Ali, Kushima, Akihiro, and Davis, Kristopher O. Wed .  
"In Situ Transmission Electron Microscopy Study of Molybdenum Oxide Contacts for Silicon Solar Cells".  United States.  https://doi.org/10.1002/pssa.201800998.  https://www.osti.gov/servlets/purl/1642675.

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@article{osti_1642675,

  title        = {In Situ Transmission Electron Microscopy Study of Molybdenum Oxide Contacts for Silicon Solar Cells},

  author       = {Ali, Haider and Koul, Supriya and Gregory, Geoffrey and Bullock, James and Javey, Ali and Kushima, Akihiro and Davis, Kristopher O.},

  abstractNote = {In this study, a molybdenum oxide (MoOx) and aluminum (Al) contact structure for crystalline silicon (c-Si) solar cells was investigated using a combination of transmission line measurements (TLM) and in-situ transmission electron microscopy (TEM). Cross-sectional high-resolution TEM (HRTEM) micrographs revealed a ≈2 nm silicon oxide (SiOx) interlayer at c-Si/MoOx interface in the as-deposited state, indicating that formation of SiOx occurs during deposition of MoOx. Moreover, oxygen diffusion takes place from MoOx towards Al resulting in the formation of a ≈2-3 nm aluminum oxide (AlOx) interlayer at the MoOx/Al interface. Overall, it was observed that MoOx/Al contact is relatively stable upon annealing up to 200°C and still retains ohmic transport with sufficiently low contact resistivity.},

  doi          = {10.1002/pssa.201800998},

  journal      = {Physica Status Solidi. A, Applications and Materials Science},

  number       = 7,

  volume       = 216,

  place        = {United States},

  year         = {Wed Mar 06 00:00:00 EST 2019},

  month        = {Wed Mar 06 00:00:00 EST 2019}

}

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Works referencing / citing this record:

Recent Progress of In Situ Transmission Electron Microscopy for Energy Materials
journal, September 2019

Zhang, Chao; Firestein, Konstantin L.; Fernando, Joseph F. S.
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Title: In Situ Transmission Electron Microscopy Study of Molybdenum Oxide Contacts for Silicon Solar Cells

Abstract

Citation Formats

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Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study
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