Topological defects and topological materials

Saxena, Avadh

doi:10.1080/10584587.2016.1189310

Title: Topological defects and topological materials

Abstract

We report that defects in materials that interpolate between two orientation states such as domain walls and those which relate to some kind of material discontinuity, e.g. dislocations and disclinations, comprise topological defects. Noncoplanar vector arrangements, e.g. vortices, skyrmions, and possibly monopole-like excitations, also belong to this family of defects. Presence of such defects affects many of the macroscopic properties of materials, for example electronic transport and strength. Materials in which topological aspects, e.g. edge or surface states, affect the electronic, transport and other properties can be described as topological materials. Topological insulators, topological superconductors and certain Dirac materials, e.g. graphene and Weyl semimetals, belong to this class of materials. Lastly, these materials possess unusual functionalities potentially useful in a variety of information processing and quantum computation based applications.

Authors:

^[1]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Publication Date:: Wed Jul 13 00:00:00 EDT 2016

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: USDOE Laboratory Directed Research and Development (LDRD) Program

OSTI Identifier:: 1498032

Report Number(s):: LA-UR-15-29211
Journal ID: ISSN 1058-4587

Grant/Contract Number:: 89233218CNA000001

Resource Type:: Accepted Manuscript

Journal Name:: Integrated Ferroelectrics

Additional Journal Information:: Journal Volume: 174; Journal Issue: 1; Journal ID: ISSN 1058-4587

Publisher:: Taylor & Francis

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Vortices; skyrmions; Dzyaloshinskii-Moriya interaction; Dirac materials; Weyl semimetals; topological insulators

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                    Saxena, Avadh. Topological defects and topological materials.  United States: N. p., 2016. 
Web.  doi:10.1080/10584587.2016.1189310.

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                    Saxena, Avadh. Topological defects and topological materials.  United States.  https://doi.org/10.1080/10584587.2016.1189310

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                    Saxena, Avadh. Wed .  
"Topological defects and topological materials".  United States.  https://doi.org/10.1080/10584587.2016.1189310.  https://www.osti.gov/servlets/purl/1498032.

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@article{osti_1498032,

  title        = {Topological defects and topological materials},

  author       = {Saxena, Avadh},

  abstractNote = {We report that defects in materials that interpolate between two orientation states such as domain walls and those which relate to some kind of material discontinuity, e.g. dislocations and disclinations, comprise topological defects. Noncoplanar vector arrangements, e.g. vortices, skyrmions, and possibly monopole-like excitations, also belong to this family of defects. Presence of such defects affects many of the macroscopic properties of materials, for example electronic transport and strength. Materials in which topological aspects, e.g. edge or surface states, affect the electronic, transport and other properties can be described as topological materials. Topological insulators, topological superconductors and certain Dirac materials, e.g. graphene and Weyl semimetals, belong to this class of materials. Lastly, these materials possess unusual functionalities potentially useful in a variety of information processing and quantum computation based applications.},

  doi          = {10.1080/10584587.2016.1189310},

  journal      = {Integrated Ferroelectrics},

  number       = 1,

  volume       = 174,

  place        = {United States},

  year         = {Wed Jul 13 00:00:00 EDT 2016},

  month        = {Wed Jul 13 00:00:00 EDT 2016}

}

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Journal Article:

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Figure 1: Double well potential for a second order or continuous transition. Right: Corresponding domain wall profiles.

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