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Title: Absolute photoluminescence intensity in thin film solar cells

Abstract

A calculation is presented for the direct conversion of a measured luminescence signal to the implied open circuit voltage. The effects of re-absorption, spectral dependence, and interference with front and back interfaces are all included, so long as the optical properties of the structure are known. The method is validated through a comparison of the terminal open-circuit voltage with the photoluminescence intensity of Cu(In,Ga)Se 2 solar cells, each as a function of illumination intensity.

Authors:
 [1];  [1];  [2];  [1]
  1. Texas State Univ., San Marcos, TX (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1497989
Report Number(s):
NREL/JA-5K00-73399
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 125; Journal Issue: 5; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; photoluminescence; nonequilibrium statistical mechanics; optical absorption; solar cells; transition metal chalcogenides; green-functions technique; electrodynamics; electrical properties and parameters; optical properties

Citation Formats

Swartz, C. H., Paul, S., Mansfield, L. M., and Holtz, M. W.. Absolute photoluminescence intensity in thin film solar cells. United States: N. p., 2019. Web. doi:10.1063/1.5064798.
Swartz, C. H., Paul, S., Mansfield, L. M., & Holtz, M. W.. Absolute photoluminescence intensity in thin film solar cells. United States. doi:10.1063/1.5064798.
Swartz, C. H., Paul, S., Mansfield, L. M., and Holtz, M. W.. Wed . "Absolute photoluminescence intensity in thin film solar cells". United States. doi:10.1063/1.5064798.
@article{osti_1497989,
title = {Absolute photoluminescence intensity in thin film solar cells},
author = {Swartz, C. H. and Paul, S. and Mansfield, L. M. and Holtz, M. W.},
abstractNote = {A calculation is presented for the direct conversion of a measured luminescence signal to the implied open circuit voltage. The effects of re-absorption, spectral dependence, and interference with front and back interfaces are all included, so long as the optical properties of the structure are known. The method is validated through a comparison of the terminal open-circuit voltage with the photoluminescence intensity of Cu(In,Ga)Se2 solar cells, each as a function of illumination intensity.},
doi = {10.1063/1.5064798},
journal = {Journal of Applied Physics},
number = 5,
volume = 125,
place = {United States},
year = {2019},
month = {2}
}

Journal Article:
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Works referenced in this record:

Strong Internal and External Luminescence as Solar Cells Approach the Shockley–Queisser Limit
journal, July 2012

  • Miller, Owen D.; Yablonovitch, Eli; Kurtz, Sarah R.
  • IEEE Journal of Photovoltaics, Vol. 2, Issue 3, p. 303-311
  • DOI: 10.1109/JPHOTOV.2012.2198434

Optical approaches to improve the photocurrent generation in Cu(In,Ga)Se2 solar cells with absorber thicknesses down to 0.5? ? m
journal, November 2012

  • Dahan, N.; Jehl, Z.; Hildebrandt, T.
  • Journal of Applied Physics, Vol. 112, Issue 9, Article No. 094902
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