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Title: Dielectric breakdown field of strained silicon under hydrostatic pressure

Abstract

First-principles density functional theory calculations are used to reveal a quantitative relationship between the dielectric breakdown field and hydrostatic pressure of crystalline Si. The electronic band structure, phonon dispersion, and electron scattering rate are computed for pressures from 62.2 kbar (compressive) to -45.6 kbar (tensile) to estimate the rate of kinetic energy gain and loss for the electron. The theoretical dielectric breakdown fields are then determined using the von Hippel–Fröhlich criterion. Compressive stresses lead to a lower breakdown field, while significant increases in the dielectric breakdown field can be achieved by tensile stresses. Strain engineering in Si technology enables efficient control of hole and electron mobilities without changing the chemical composition or making structural modifications to achieve the target performance of microelectronic applications. Under certain stress conditions, however, Si experiences a narrowing of the bandgap, leading to an increase in leakage current, or a reduction in the dielectric breakdown field, leading to a device less endurable under high electric fields. As applications rapidly scale down, these disadvantages become critical. A clear understanding of the relationship between strain and dielectric breakdown behaviors becomes useful.

Authors:
ORCiD logo [1];  [1]
  1. Univ. of Connecticut, Storrs, CT (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1497888
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 11; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Kim, Chiho, and Ramprasad, Rampi. Dielectric breakdown field of strained silicon under hydrostatic pressure. United States: N. p., 2017. Web. doi:10.1063/1.5003344.
Kim, Chiho, & Ramprasad, Rampi. Dielectric breakdown field of strained silicon under hydrostatic pressure. United States. doi:10.1063/1.5003344.
Kim, Chiho, and Ramprasad, Rampi. Fri . "Dielectric breakdown field of strained silicon under hydrostatic pressure". United States. doi:10.1063/1.5003344. https://www.osti.gov/servlets/purl/1497888.
@article{osti_1497888,
title = {Dielectric breakdown field of strained silicon under hydrostatic pressure},
author = {Kim, Chiho and Ramprasad, Rampi},
abstractNote = {First-principles density functional theory calculations are used to reveal a quantitative relationship between the dielectric breakdown field and hydrostatic pressure of crystalline Si. The electronic band structure, phonon dispersion, and electron scattering rate are computed for pressures from 62.2 kbar (compressive) to -45.6 kbar (tensile) to estimate the rate of kinetic energy gain and loss for the electron. The theoretical dielectric breakdown fields are then determined using the von Hippel–Fröhlich criterion. Compressive stresses lead to a lower breakdown field, while significant increases in the dielectric breakdown field can be achieved by tensile stresses. Strain engineering in Si technology enables efficient control of hole and electron mobilities without changing the chemical composition or making structural modifications to achieve the target performance of microelectronic applications. Under certain stress conditions, however, Si experiences a narrowing of the bandgap, leading to an increase in leakage current, or a reduction in the dielectric breakdown field, leading to a device less endurable under high electric fields. As applications rapidly scale down, these disadvantages become critical. A clear understanding of the relationship between strain and dielectric breakdown behaviors becomes useful.},
doi = {10.1063/1.5003344},
journal = {Applied Physics Letters},
number = 11,
volume = 111,
place = {United States},
year = {2017},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 1 work
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Figures / Tables:

Figure 1 Figure 1: Variation of the band structure and density of states (DOS) for (a) electrons and (b) phonons of Si under hydrostatic pressure. The conduction band is adjusted using the HSE level bandgap. The direction of change under compression is shown with arrows for guidance.

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Works referenced in this record:

From Organized High-Throughput Data to Phenomenological Theory using Machine Learning: The Example of Dielectric Breakdown
journal, February 2016


Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

The effect of pressure on the optical absorption edge of germanium and silicon
journal, November 1958


Impact ionization of electrons in silicon (steady state)
journal, September 1983

  • Tang, J. Y.; Hess, Karl
  • Journal of Applied Physics, Vol. 54, Issue 9
  • DOI: 10.1063/1.332737

Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
journal, September 2001

  • Tezuka, T.; Sugiyama, N.; Takagi, S.
  • Applied Physics Letters, Vol. 79, Issue 12
  • DOI: 10.1063/1.1404409

Strain-engineered artificial atom as a broad-spectrum solar energy funnel
journal, November 2012


Hybrid functionals based on a screened Coulomb potential
journal, May 2003

  • Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
  • The Journal of Chemical Physics, Vol. 118, Issue 18
  • DOI: 10.1063/1.1564060

Accelerated Oxygen Exchange Kinetics on Nd 2 NiO 4+δ Thin Films with Tensile Strain along c -Axis
journal, January 2015

  • Tsvetkov, Nikolai; Lu, Qiyang; Chen, Yan
  • ACS Nano, Vol. 9, Issue 2
  • DOI: 10.1021/nn506279h

Theory of electron-avalanche breakdown in solids
journal, September 1981


The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility
journal, July 2015

  • Yang, Wen; Sun, Qing-Qing; Geng, Yang
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep11921

Special points for Brillouin-zone integrations
journal, June 1976

  • Monkhorst, Hendrik J.; Pack, James D.
  • Physical Review B, Vol. 13, Issue 12, p. 5188-5192
  • DOI: 10.1103/PhysRevB.13.5188

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009

  • Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
  • Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
  • DOI: 10.1088/0953-8984/21/39/395502

Avalanche Breakdown Effects in Near‐Intrinsic Silicon and Germanium
journal, December 1967

  • Park, J. N.; Rose, K.; Mortenson, K. E.
  • Journal of Applied Physics, Vol. 38, Issue 13
  • DOI: 10.1063/1.1709325

Strained silicon — the key to sub-45 nm CMOS
journal, April 2006


Effects of Temperature and Voltage on Dielectric Breakdown Strengths of PET and FRP under Mechanical Stresses
journal, December 1982

  • Park, C.; Hara, M.; Akazaki, M.
  • IEEE Transactions on Electrical Insulation, Vol. EI-17, Issue 6
  • DOI: 10.1109/TEI.1982.298531

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
journal, January 2005

  • Lee, Minjoo L.; Fitzgerald, Eugene A.; Bulsara, Mayank T.
  • Journal of Applied Physics, Vol. 97, Issue 1
  • DOI: 10.1063/1.1819976

Pressure coefficients of band gaps in semiconductors
journal, April 1984


Wide bandgap semiconductor materials and devices
journal, January 1996

  • Yoder, M. N.
  • IEEE Transactions on Electron Devices, Vol. 43, Issue 10
  • DOI: 10.1109/16.536807

Strain Engineering to Modify the Electrochemistry of Energy Storage Electrodes
journal, June 2016

  • Muralidharan, Nitin; Carter, Rachel; Oakes, Landon
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep27542

50+ years of intrinsic breakdown
journal, March 2013

  • Sun, Ying; Bealing, Clive; Boggs, Steven
  • IEEE Electrical Insulation Magazine, Vol. 29, Issue 2
  • DOI: 10.1109/MEI.2013.6457595

Calculation of the Γ Δ Electron-Phonon and Hole-Phonon Scattering Matrix Elements in Silicon
journal, February 1982


Mechanoelectrochemical Catalysis of the Effect of Elastic Strain on a Platinum Nanofilm for the ORR Exerted by a Shape Memory Alloy Substrate
journal, June 2015

  • Du, Minshu; Cui, Lishan; Cao, Yi
  • Journal of the American Chemical Society, Vol. 137, Issue 23
  • DOI: 10.1021/jacs.5b03034

Pressure coefficients for band gaps in silicon
journal, February 1974


Carrier pocket engineering applied to “strained” Si/Ge superlattices to design useful thermoelectric materials
journal, October 1999

  • Koga, T.; Sun, X.; Cronin, S. B.
  • Applied Physics Letters, Vol. 75, Issue 16, p. 2438-2440
  • DOI: 10.1063/1.125040

The intrinsic electrical breakdown strength of insulators from first principles
journal, September 2012

  • Sun, Y.; Boggs, S. A.; Ramprasad, R.
  • Applied Physics Letters, Vol. 101, Issue 13
  • DOI: 10.1063/1.4755841

Sub-10 nm Carbon Nanotube Transistor
journal, January 2012

  • Franklin, Aaron D.; Luisier, Mathieu; Han, Shu-Jen
  • Nano Letters, Vol. 12, Issue 2
  • DOI: 10.1021/nl203701g

Building up strain in colloidal metal nanoparticle catalysts
journal, January 2015

  • Sneed, Brian T.; Young, Allison P.; Tsung, Chia-Kuang
  • Nanoscale, Vol. 7, Issue 29
  • DOI: 10.1039/C5NR02529J

Theory of Dielectric Breakdown*
journal, March 1943


Negative thermal expansion of diamond and zinc-blende semiconductors
journal, July 1989


Electric Breakdown of Solid and Liquid Insulators
journal, December 1937


The influence of mechanical stress on the dielectric breakdown field strength of thin SiO2 films
journal, July 1998

  • Jeffery, Steve; Sofield, Carl J.; Pethica, John B.
  • Applied Physics Letters, Vol. 73, Issue 2
  • DOI: 10.1063/1.121745

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