Dielectric breakdown field of strained silicon under hydrostatic pressure

Journal Article · 15 September 2017 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5003344 · OSTI ID:1497888

Kim, Chiho  ^[1]; Ramprasad, Rampi ^[1]

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1. Univ. of Connecticut, Storrs, CT (United States)

First-principles density functional theory calculations are used to reveal a quantitative relationship between the dielectric breakdown field and hydrostatic pressure of crystalline Si. The electronic band structure, phonon dispersion, and electron scattering rate are computed for pressures from 62.2 kbar (compressive) to -45.6 kbar (tensile) to estimate the rate of kinetic energy gain and loss for the electron. The theoretical dielectric breakdown fields are then determined using the von Hippel–Fröhlich criterion. Compressive stresses lead to a lower breakdown field, while significant increases in the dielectric breakdown field can be achieved by tensile stresses. Strain engineering in Si technology enables efficient control of hole and electron mobilities without changing the chemical composition or making structural modifications to achieve the target performance of microelectronic applications. Under certain stress conditions, however, Si experiences a narrowing of the bandgap, leading to an increase in leakage current, or a reduction in the dielectric breakdown field, leading to a device less endurable under high electric fields. As applications rapidly scale down, these disadvantages become critical. A clear understanding of the relationship between strain and dielectric breakdown behaviors becomes useful.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE
• OSTI ID: 1497888
• Journal Information: Applied Physics Letters, Vol. 111, Issue 11; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)Copyright Statement
• Country of Publication: United States
• Language: English