skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

This content will become publicly available on February 14, 2020

Title: Thickness dependence of Al 0.88Sc 0.12N thin films grown on silicon

Abstract

The thickening behavior of aluminum scandium nitride (Al 0.88Sc 0.12N) films grown on Si(111) substrates has been investigated experimentally using X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy, and residual stress measurement. Al 0.88Sc 0.12N films were grown with thicknesses spanning 14 nm to 1.1 um. TEM analysis shows that the argon sputter etch used to remove the native oxide prior to deposition produced an amorphous, oxygen-rich surface, preventing epitaxial growth. XRD analysis of the films show that the A1ScN(002) orientation improves as the films thicken and the XRD A1ScN(002) rocking curve full width half maximum decreases to 1.34 q for the 1.1 pm thick film. XRD analysis shows that the unit cell is expanded in both the a- and c-axes by Sc doping; the a-axis lattice parameter was measured to be 3.172 ± 0.007 A and the c-axis lattice parameter was measured to be 5.000 ± 0.001 A, representing 1.96% and 0.44% expansions over aluminum nitride lattice parameters, respectively. The grain size and roughness increase as the film thickness increases. A stress gradient forms through the film; the residual stress grows more tensile as the film thickens, from -1.24 GPa to +8.5MPa.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1497632
Report Number(s):
SAND2019-1731J
Journal ID: ISSN 0040-6090; 672650
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Thin Solid Films
Additional Journal Information:
Journal Volume: 675; Journal Issue: C; Journal ID: ISSN 0040-6090
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Knisely, Katherine, Douglas, Erica, Mudrick, John, Rodriguez, Mark, and Kotula, Paul. Thickness dependence of Al0.88Sc0.12N thin films grown on silicon. United States: N. p., 2019. Web. doi:10.1016/j.tsf.2019.02.023.
Knisely, Katherine, Douglas, Erica, Mudrick, John, Rodriguez, Mark, & Kotula, Paul. Thickness dependence of Al0.88Sc0.12N thin films grown on silicon. United States. doi:10.1016/j.tsf.2019.02.023.
Knisely, Katherine, Douglas, Erica, Mudrick, John, Rodriguez, Mark, and Kotula, Paul. Thu . "Thickness dependence of Al0.88Sc0.12N thin films grown on silicon". United States. doi:10.1016/j.tsf.2019.02.023.
@article{osti_1497632,
title = {Thickness dependence of Al0.88Sc0.12N thin films grown on silicon},
author = {Knisely, Katherine and Douglas, Erica and Mudrick, John and Rodriguez, Mark and Kotula, Paul},
abstractNote = {The thickening behavior of aluminum scandium nitride (Al0.88Sc0.12N) films grown on Si(111) substrates has been investigated experimentally using X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy, and residual stress measurement. Al0.88Sc0.12N films were grown with thicknesses spanning 14 nm to 1.1 um. TEM analysis shows that the argon sputter etch used to remove the native oxide prior to deposition produced an amorphous, oxygen-rich surface, preventing epitaxial growth. XRD analysis of the films show that the A1ScN(002) orientation improves as the films thicken and the XRD A1ScN(002) rocking curve full width half maximum decreases to 1.34 q for the 1.1 pm thick film. XRD analysis shows that the unit cell is expanded in both the a- and c-axes by Sc doping; the a-axis lattice parameter was measured to be 3.172 ± 0.007 A and the c-axis lattice parameter was measured to be 5.000 ± 0.001 A, representing 1.96% and 0.44% expansions over aluminum nitride lattice parameters, respectively. The grain size and roughness increase as the film thickness increases. A stress gradient forms through the film; the residual stress grows more tensile as the film thickens, from -1.24 GPa to +8.5MPa.},
doi = {10.1016/j.tsf.2019.02.023},
journal = {Thin Solid Films},
number = C,
volume = 675,
place = {United States},
year = {2019},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on February 14, 2020
Publisher's Version of Record

Save / Share: