skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

This content will become publicly available on February 25, 2020

Title: Influence of Microwave Excitation-Power on the Narrow Negative Magnetoresistance Effect Around B  = 0 T in the Ultra-High Mobility GaAs/AlGaAs 2DES

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [2];  [2];  [1]
  1. Department of Physics and Astronomy, Georgia State University, Atlanta 30303 Georgia
  2. Laboratorium für Festkörperphysik, ETH-Zurich, 8093 Zurich Switzerland
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1496649
Grant/Contract Number:  
SC0001762
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi B. Basic Solid State Physics
Additional Journal Information:
Journal Name: Physica Status Solidi B. Basic Solid State Physics; Journal ID: ISSN 0370-1972
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Samaraweera, Rasanga L., Gunawardana, Binuka, Kriisa, Annika, Nanayakkara, Tharanga, Munasinghe, Rasadi, Reichl, Christian, Wegscheider, Werner, and Mani, Ramesh G. Influence of Microwave Excitation-Power on the Narrow Negative Magnetoresistance Effect Around B  = 0 T in the Ultra-High Mobility GaAs/AlGaAs 2DES. Germany: N. p., 2019. Web. doi:10.1002/pssb.201800610.
Samaraweera, Rasanga L., Gunawardana, Binuka, Kriisa, Annika, Nanayakkara, Tharanga, Munasinghe, Rasadi, Reichl, Christian, Wegscheider, Werner, & Mani, Ramesh G. Influence of Microwave Excitation-Power on the Narrow Negative Magnetoresistance Effect Around B  = 0 T in the Ultra-High Mobility GaAs/AlGaAs 2DES. Germany. doi:10.1002/pssb.201800610.
Samaraweera, Rasanga L., Gunawardana, Binuka, Kriisa, Annika, Nanayakkara, Tharanga, Munasinghe, Rasadi, Reichl, Christian, Wegscheider, Werner, and Mani, Ramesh G. Mon . "Influence of Microwave Excitation-Power on the Narrow Negative Magnetoresistance Effect Around B  = 0 T in the Ultra-High Mobility GaAs/AlGaAs 2DES". Germany. doi:10.1002/pssb.201800610.
@article{osti_1496649,
title = {Influence of Microwave Excitation-Power on the Narrow Negative Magnetoresistance Effect Around B  = 0 T in the Ultra-High Mobility GaAs/AlGaAs 2DES},
author = {Samaraweera, Rasanga L. and Gunawardana, Binuka and Kriisa, Annika and Nanayakkara, Tharanga and Munasinghe, Rasadi and Reichl, Christian and Wegscheider, Werner and Mani, Ramesh G.},
abstractNote = {},
doi = {10.1002/pssb.201800610},
journal = {Physica Status Solidi B. Basic Solid State Physics},
number = ,
volume = ,
place = {Germany},
year = {2019},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on February 25, 2020
Publisher's Version of Record

Save / Share: