Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation

Zhang, Yanwen; Xue, Haizhou; Zarkadoula, Eva; Sachan, Ritesh; Ostrouchov, Christopher; Liu, Peng; Wang, Xue-lin; Zhang, Shuo; Wang, Tie Shan; Weber, William J.

doi:10.1016/j.cossms.2017.09.003

Title: Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation

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Authors:: Zhang, Yanwen; Xue, Haizhou; Zarkadoula, Eva; Sachan, Ritesh; Ostrouchov, Christopher; Liu, Peng; Wang, Xue-lin; Zhang, Shuo; Wang, Tie Shan; Weber, William J.

Publication Date:: 2017-12-01

Sponsoring Org.:: USDOE

OSTI Identifier:: 1496386

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Current Opinion in Solid State and Materials Science

Additional Journal Information:: Journal Name: Current Opinion in Solid State and Materials Science Journal Volume: 21 Journal Issue: 6; Journal ID: ISSN 1359-0286

Publisher:: Elsevier

Country of Publication:: United Kingdom

Language:: English

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                    Zhang, Yanwen, Xue, Haizhou, Zarkadoula, Eva, Sachan, Ritesh, Ostrouchov, Christopher, Liu, Peng, Wang, Xue-lin, Zhang, Shuo, Wang, Tie Shan, and Weber, William J. Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation.  United Kingdom: N. p., 2017. 
Web.  doi:10.1016/j.cossms.2017.09.003.

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                    Zhang, Yanwen, Xue, Haizhou, Zarkadoula, Eva, Sachan, Ritesh, Ostrouchov, Christopher, Liu, Peng, Wang, Xue-lin, Zhang, Shuo, Wang, Tie Shan, & Weber, William J. Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation.  United Kingdom.  https://doi.org/10.1016/j.cossms.2017.09.003

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                    Zhang, Yanwen, Xue, Haizhou, Zarkadoula, Eva, Sachan, Ritesh, Ostrouchov, Christopher, Liu, Peng, Wang, Xue-lin, Zhang, Shuo, Wang, Tie Shan, and Weber, William J. Fri .  
"Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation".  United Kingdom.  https://doi.org/10.1016/j.cossms.2017.09.003.

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@article{osti_1496386,

  title        = {Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation},

  author       = {Zhang, Yanwen and Xue, Haizhou and Zarkadoula, Eva and Sachan, Ritesh and Ostrouchov, Christopher and Liu, Peng and Wang, Xue-lin and Zhang, Shuo and Wang, Tie Shan and Weber, William J.},

  abstractNote = {},

  doi          = {10.1016/j.cossms.2017.09.003},

  journal      = {Current Opinion in Solid State and Materials Science},

  number       = 6,

  volume       = 21,

  place        = {United Kingdom},

  year         = {2017},

  month        = {12}

}

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