Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation

Journal Article · 30 November 2017 · Current Opinion in Solid State and Materials Science

DOI: https://doi.org/10.1016/j.cossms.2017.09.003 · OSTI ID:1496386

Zhang, Yanwen; Xue, Haizhou; Zarkadoula, Eva; Sachan, Ritesh; Ostrouchov, Christopher; Liu, Peng; Wang, Xue-lin; Zhang, Shuo; Wang, Tie Shan; Weber, William J.

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• Sponsoring Organization: USDOE
• Grant/Contract Number: AC05-00OR22725; AC02-05CH11231
• OSTI ID: 1496386
• Journal Information: Current Opinion in Solid State and Materials Science, Journal Name: Current Opinion in Solid State and Materials Science Journal Issue: 6 Vol. 21; ISSN 1359-0286
• Publisher: ElsevierCopyright Statement
• Country of Publication: United Kingdom
• Language: English