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Title: Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

Abstract

We use transient electrical measurements to investigate the details of self-heating and charge trapping in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and operated under strongly nonequilibrium conditions. Relative to more standard devices fabricated on SiO 2 substrates, encapsulation is shown to lead to an enhanced immunity to charge trapping, the influence of which is only apparent under the combined influence of strong gate and drain electric fields. Although the precise source of the trapping remains to be determined, one possibility is that the strong gate field may lower the barriers associated with native defects in the h-BN, allowing them to mediate the capture of energetic carriers from the graphene channel. Self-heating in these devices is identified through the observation of time-dependent variations of the current in graphene and is found to be described by a time constant consistent with expectations for nonequilibrium phonon conduction into the dielectric layers of the device. Overall, our results suggest that h-BN-encapsulated graphene devices provide an excellent system for implementations in which operation under strongly nonequilibrium conditions is desired.

Authors:
 [1];  [2];  [3];  [1];  [3];  [1];  [4]; ORCiD logo [1];  [5];  [6];  [6];  [6];  [6];  [2];  [7]; ORCiD logo [7];  [8];  [8]; ORCiD logo [9]
  1. Univ. at Buffalo, NY (United States). Dept. of Electrical Engineering
  2. Chinese Academy of Sciences (CAS), Beijing (China). High-Frequency High-Voltage Device and Integrated Circuits Center. Inst. of Microelectronics
  3. Univ. at Buffalo, NY (United States). Dept. of Physics
  4. King Mongkut’s Inst. of Technology Ladkrabang, Bangkok (Thailand). Dept. of Electronics Engineering. Faculty of Engineering
  5. King Mongkut’s Inst. of Technology Ladkrabang, Bangkok (Thailand). Dept. of Physics. Faculty of Science
  6. Chiba Univ. (Japan). Dept. of Materials Science
  7. Sungkyunkwan Univ., Suwon (Korea, Republic of). School of Electronic and Electrical Engineering. Sungkyunkwan Advanced Inst. of Nanotechnology (SAINT)
  8. National Inst. for Materials Science (NIMS), Tsukuba (Japan). Advanced Materials Lab.
  9. Univ. at Buffalo, NY (United States). Dept. of Electrical Engineering; Chiba Univ. (Japan). Dept. of Materials Science
Publication Date:
Research Org.:
Univ. at Buffalo, NY (United States); King Mongkut’s Inst. of Technology Ladkrabang, Bangkok (Thailand)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); King Mongkut’s Inst. of Technology Ladkrabang Research Fund (Thailand)
OSTI Identifier:
1495877
Alternate Identifier(s):
OSTI ID: 1508782
Grant/Contract Number:  
FG02-04ER46180; KREF046102; Thep-61-EQP-KMITL3
Resource Type:
Published Article
Journal Name:
ACS Omega
Additional Journal Information:
Journal Volume: 4; Journal Issue: 2; Journal ID: ISSN 2470-1343
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; electric transport processes and properties; materials processing; solid state electrochemistry

Citation Formats

Nathawat, Jubin, Zhao, Miao, Kwan, Chun-Pui, Yin, Shenchu, Arabchigavkani, Nargess, Randle, Michael, Ramamoorthy, Harihara, He, Guanchen, Somphonsane, Ratchanok, Matsumoto, Naoki, Sakanashi, Kohei, Kida, Michio, Aoki, Nobuyuki, Jin, Zhi, Kim, Yunseob, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, and Bird, Jonathan P. Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping. United States: N. p., 2019. Web. doi:10.1021/acsomega.8b03259.
Nathawat, Jubin, Zhao, Miao, Kwan, Chun-Pui, Yin, Shenchu, Arabchigavkani, Nargess, Randle, Michael, Ramamoorthy, Harihara, He, Guanchen, Somphonsane, Ratchanok, Matsumoto, Naoki, Sakanashi, Kohei, Kida, Michio, Aoki, Nobuyuki, Jin, Zhi, Kim, Yunseob, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, & Bird, Jonathan P. Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping. United States. doi:10.1021/acsomega.8b03259.
Nathawat, Jubin, Zhao, Miao, Kwan, Chun-Pui, Yin, Shenchu, Arabchigavkani, Nargess, Randle, Michael, Ramamoorthy, Harihara, He, Guanchen, Somphonsane, Ratchanok, Matsumoto, Naoki, Sakanashi, Kohei, Kida, Michio, Aoki, Nobuyuki, Jin, Zhi, Kim, Yunseob, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, and Bird, Jonathan P. Fri . "Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping". United States. doi:10.1021/acsomega.8b03259.
@article{osti_1495877,
title = {Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping},
author = {Nathawat, Jubin and Zhao, Miao and Kwan, Chun-Pui and Yin, Shenchu and Arabchigavkani, Nargess and Randle, Michael and Ramamoorthy, Harihara and He, Guanchen and Somphonsane, Ratchanok and Matsumoto, Naoki and Sakanashi, Kohei and Kida, Michio and Aoki, Nobuyuki and Jin, Zhi and Kim, Yunseob and Kim, Gil-Ho and Watanabe, Kenji and Taniguchi, Takashi and Bird, Jonathan P.},
abstractNote = {We use transient electrical measurements to investigate the details of self-heating and charge trapping in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and operated under strongly nonequilibrium conditions. Relative to more standard devices fabricated on SiO2 substrates, encapsulation is shown to lead to an enhanced immunity to charge trapping, the influence of which is only apparent under the combined influence of strong gate and drain electric fields. Although the precise source of the trapping remains to be determined, one possibility is that the strong gate field may lower the barriers associated with native defects in the h-BN, allowing them to mediate the capture of energetic carriers from the graphene channel. Self-heating in these devices is identified through the observation of time-dependent variations of the current in graphene and is found to be described by a time constant consistent with expectations for nonequilibrium phonon conduction into the dielectric layers of the device. Overall, our results suggest that h-BN-encapsulated graphene devices provide an excellent system for implementations in which operation under strongly nonequilibrium conditions is desired.},
doi = {10.1021/acsomega.8b03259},
journal = {ACS Omega},
number = 2,
volume = 4,
place = {United States},
year = {2019},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1021/acsomega.8b03259

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