Observing a previously hidden structural-phase transition onset through heteroepitaxial cap response

Journal Article · 19 February 2019 · Proceedings of the National Academy of Sciences of the United States of America

DOI: https://doi.org/10.1073/pnas.1819641116 · OSTI ID:1495315

Lan, Fanli ^[1]; Chen, Hongyan ^[1]; Lin, Hanxuan ^[1]; Bai, Yu ^[1]; Yu, Yang ^[1]; Miao, Tian ^[1]; Zhu, Yinyan ^[1]; Ward, T. Z.  ^[2]; Gai, Zheng ^[3]; Wang, Wenbin ^[4]; Yin, Lifeng ^[5]; Plummer, E. W.  ^[6]; Shen, Jian ^[5]

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1. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433 Shanghai, China,
2. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831,
3. Center for Nanophase Materials Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831,
4. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433 Shanghai, China,, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433 Shanghai, China,
5. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433 Shanghai, China,, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433 Shanghai, China,, Collaborative Innovation Center of Advanced Microstructures, 210093 Nanjing, China,
6. Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70808

Significance We provide an approach to study structural transitions by using appropriate heteroepitaxial caps. Previously unobservable phase transitions that involve small changes in lattice constants, but may have important impact on the physical properties of the material, can now be detected in real space. Using the coherent nanotwinning waves of epitaxial La _0.7 Sr _0.3 MnO ₃ /SrTiO ₃ thin films as a sensitive detector, we are able to uncover the onset stage of the cubic-to-tetragonal structural-phase transition of SrTiO ₃ in real space. Researchers involved in the study of material properties as well as technologists in a variety of industries, such as electronics, will greatly benefit from this approach.

• Sponsoring Organization: USDOE
• Grant/Contract Number: SC0002136
• OSTI ID: 1495315
• Alternate ID(s): OSTI ID: 1818758
• Journal Information: Proceedings of the National Academy of Sciences of the United States of America, Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Issue: 10 Vol. 116; ISSN 0027-8424
• Publisher: Proceedings of the National Academy of SciencesCopyright Statement
• Country of Publication: United States
• Language: English