The influence of the substrate misorientation on the structural quality of GaN layers grown by HVPE

Journal Article · 01 September 2018 · Journal of Crystal Growth

DOI: https://doi.org/10.1016/j.jcrysgro.2018.07.010 · OSTI ID:1495265

Liliental-Weber, Z.; dos Reis, R.; Sochacki, T.; Bockowski, M.

• Sponsoring Organization: USDOE
• Grant/Contract Number: AC02-05CH11231
• OSTI ID: 1495265
• Journal Information: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 498 Journal Issue: C; ISSN 0022-0248
• Publisher: ElsevierCopyright Statement
• Country of Publication: Netherlands
• Language: English