Ultrafast manipulation of topologically enhanced surface transport driven by mid-infrared and terahertz pulses in Bi2Se3
Abstract
Topology-protected surface transport of ultimate thinness in three-dimensional topological insulators (TIs) is breaking new ground in quantum science and technology. Yet a challenge remains on how to disentangle and selectively control surface helical spin transport from the bulk contribution. Here we use the mid-infrared and terahertz (THz) photoexcitation of exclusive intraband transitions to enable ultrafast manipulation of surface THz conductivity in Bi2Se3. The unique, transient electronic state is characterized by frequency-dependent carrier relaxations that directly distinguish the faster surface channel than the bulk with no complication from interband excitations or need for reduced bulk doping. We determine the topological enhancement ratio between bulk and surface scattering rates, i.e., γBS/γSS ~3.80 in equilibrium. As a result, the ultra-broadband, wavelength-selective pumping may be applied to emerging topological semimetals for separation and control of the protected transport connected with the Weyl nodes from other bulk bands.
- Authors:
-
- Ames Lab. and Iowa State Univ., Ames, IA (United States)
- Univ. of Notre Dame, Notre Dame, IN (United States)
- Univ. of Alabama at Birmingham, Birmingham, AL (United States)
- Publication Date:
- Research Org.:
- Ames Lab., Ames, IA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1494932
- Report Number(s):
- IS-J-9887
Journal ID: ISSN 2041-1723
- Grant/Contract Number:
- AC02-07CH11358
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Luo, L., Yang, X., Liu, X., Liu, Z., Vaswani, C., Cheng, D., Mootz, M., Zhao, X., Yao, Y., Wang, C. -Z., Ho, K. -M., Perakis, I. E., Dobrowolska, M., Furdyna, J. K., and Wang, J. Ultrafast manipulation of topologically enhanced surface transport driven by mid-infrared and terahertz pulses in Bi2Se3. United States: N. p., 2019.
Web. doi:10.1038/s41467-019-08559-6.
Luo, L., Yang, X., Liu, X., Liu, Z., Vaswani, C., Cheng, D., Mootz, M., Zhao, X., Yao, Y., Wang, C. -Z., Ho, K. -M., Perakis, I. E., Dobrowolska, M., Furdyna, J. K., & Wang, J. Ultrafast manipulation of topologically enhanced surface transport driven by mid-infrared and terahertz pulses in Bi2Se3. United States. https://doi.org/10.1038/s41467-019-08559-6
Luo, L., Yang, X., Liu, X., Liu, Z., Vaswani, C., Cheng, D., Mootz, M., Zhao, X., Yao, Y., Wang, C. -Z., Ho, K. -M., Perakis, I. E., Dobrowolska, M., Furdyna, J. K., and Wang, J. Tue .
"Ultrafast manipulation of topologically enhanced surface transport driven by mid-infrared and terahertz pulses in Bi2Se3". United States. https://doi.org/10.1038/s41467-019-08559-6. https://www.osti.gov/servlets/purl/1494932.
@article{osti_1494932,
title = {Ultrafast manipulation of topologically enhanced surface transport driven by mid-infrared and terahertz pulses in Bi2Se3},
author = {Luo, L. and Yang, X. and Liu, X. and Liu, Z. and Vaswani, C. and Cheng, D. and Mootz, M. and Zhao, X. and Yao, Y. and Wang, C. -Z. and Ho, K. -M. and Perakis, I. E. and Dobrowolska, M. and Furdyna, J. K. and Wang, J.},
abstractNote = {Topology-protected surface transport of ultimate thinness in three-dimensional topological insulators (TIs) is breaking new ground in quantum science and technology. Yet a challenge remains on how to disentangle and selectively control surface helical spin transport from the bulk contribution. Here we use the mid-infrared and terahertz (THz) photoexcitation of exclusive intraband transitions to enable ultrafast manipulation of surface THz conductivity in Bi2Se3. The unique, transient electronic state is characterized by frequency-dependent carrier relaxations that directly distinguish the faster surface channel than the bulk with no complication from interband excitations or need for reduced bulk doping. We determine the topological enhancement ratio between bulk and surface scattering rates, i.e., γBS/γSS ~3.80 in equilibrium. As a result, the ultra-broadband, wavelength-selective pumping may be applied to emerging topological semimetals for separation and control of the protected transport connected with the Weyl nodes from other bulk bands.},
doi = {10.1038/s41467-019-08559-6},
journal = {Nature Communications},
number = 1,
volume = 10,
place = {United States},
year = {2019},
month = {2}
}
Web of Science
Figures / Tables:

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